• Title/Summary/Keyword: Etching glass

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A Study on the Electrical Characteristics of Dye-Sensitized Solar Cell with Glass Substrate surface Etching (유리기판 표면 Etching을 통한 분광특성연구)

  • Kim, Haemaro;Lee, Don-Kyu
    • Journal of IKEEE
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    • v.23 no.2
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    • pp.534-537
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    • 2019
  • The optical loss is caused by reflection on the surface of the solar cell, without being absorbed inside the solar cell. Research is actively being conducted to reduce optical loss due to such reflection of light and to improve conversion efficiency of solar cells. In this paper, the surface of the FTO glass substrate was wet etched, and the structural characteristics of the tough surface were evaluated. In addition, optical properties on the surface were analyzed, etched using spectrometer. When light was introduced to a rough surface formed by etching, it was confirmed that the multiple reflections reduced the amount of light reflection from the surface, thereby increaseing the amount of light penetrating the glass substrate.

Effects of Fluorine Addition on Thermal Properties and Plasma Resistance of MgO-Al2O3-SiO2 Glass (MgO-Al2O3-SiO2계 유리 열물성 및 내플라즈마 특성에 대한 Fluorine 첨가의 영향)

  • Yoon, Ji Sob;Choi, Jae Ho;Jung, YoonSung;Min, Kyung Won;Kim, Hyeong-Jun
    • Journal of the Semiconductor & Display Technology
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    • v.21 no.1
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    • pp.119-126
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    • 2022
  • MAS-based glass, which has been studied to replace the ceramic material used in the plasma etching chamber, has problems such as forming and processing due to its high melting temperature. To solve this problem, in this study, fluoride was added to the existing MAS-based glass to increase the workability in the glass manufacturing and to improve the chemical resistance to CF4/Ar/O2 plasma gas. Through RAMAN analysis, the structural change of the glass according to the addition of fluoride was observed. In addition, it was confirmed that high-temperature viscosity and thermal properties decreased as the fluoride content increased and plasma resistance was maintained, it showed an excellent etching rate of up to 11 times compared to quartz glass.

A Study on Etching of $EAGLE^{2000TM}$ LCD Glass by HF-HCl Mixed Solutions (HF-HCl 혼합 용액에서 $EAGLE^{2000TM}$ LCD 유리의 식각에 관한 연구)

  • Byun, Ji-Young
    • Journal of the Microelectronics and Packaging Society
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    • v.15 no.3
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    • pp.41-46
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    • 2008
  • Etching kinetics of $EAGLE^{2000TM}$ LCD glass was investigated using 2.5MHF-xMHCl$(x:0\sim8)$ acid mixtures. It was concluded that the reaction of HF-containing solutions with the glass was the rate-determining step for the dissolution process when considering following observations; the value of the activation energy $35\sim45$ kJ/mol and insensitivity of the dissolution rate to the etching time and the moving velocity of the glass into the solution. The etching rate linearly increased with increasing the HCl concentration in the etchant. It was also observed that the etched surface was as smooth as the original surface by addition of HCl and increase in etching temperature. This is due to the catalytic role of the $H_{3}O^{+]$ ions in the dissolution process.

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Non-HF Type Etching Solution for Slimming of Flat Panel Display Glass (평판디스플레이용 유리의 박판화공정을 위한 비불산형 식각액)

  • Lee, Chul-Tae
    • Applied Chemistry for Engineering
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    • v.27 no.1
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    • pp.101-109
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    • 2016
  • The purpose of this research was to develop a flat panel display device's glass etchant which can replace hydrofluoric acid. The glass etchant was composed of 18~19% wt% of ammonium hydrogen fluoride, 24~25 wt% of sulfuric acid, 45~46 wt% of water, 4~5 wt% of sulfate and 7~8 wt% of fluoro-silicate. By replenishing the etchant which has the amount of 5% of initial solution's mass, it was possible to reuse the etchant continuously. The developed etchant showed $5{\mu}m/min$ of etching rate at $30^{\circ}C$. The reusable etchant, with replenishing 5% of initial etchant mass showed the stable etching rate, which has the deviation of less than $0.1{\mu}m/min$ etching rate. The glass surface of flat panel display device created from our etching process was in good condition with any defects such as pin hole and dimple.

The Influence of Charged Static Electricity on LCD Glass and Neutralization Characteristic by Soft X-ray

  • Choi, Chang-Hoon;Han, Sang-Ho;Park, Sun-Woo;Yun, Hae-Sang
    • Journal of Information Display
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    • v.1 no.1
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    • pp.52-58
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    • 2000
  • We observed that static electricity has an influence on the etching unformity of dry etching process. When the static electricity was applied from-200[V]to-1000[V] on glass substrates, the etching rate uniformity was changed to 1.5%-15%. In this experiment, the soft X-ray to neutralize static electricity was adopted as ore of neutralization methods. As an experimental result, soft X-ray irradiation improved neutralization capability on the surface of LCD glass substrate within the short time, about 15-30sec. The difference of etching rate uniformity was below 0.5%.

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Double Texturing of Glass Substrate and ZnO : Al Transparent Electrode Surfaces for High Performance Thin Film Solar Cells (고성능 박막태양전지를 위한 유리 기판 및 산화 아연 투명 전극의 2중 구조 표면 조직화 공정 연구)

  • Kang, Dong-Won
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.66 no.8
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    • pp.1230-1235
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    • 2017
  • We studied surface texture-etching of glass substrate by using reactive ion etching process with various working pressure (0.7~9.0 mT). With the increase in the pressure, a haze parameter, which means diffusive transmittance/total transmittance, was increased in overall wavelength regions, as measured by spectrophotometer. Also, atomic force microscopy (AFM) study also showed that the surface topography transformed from V-shaped, keen surface to U-shaped, flattened surface, which is beneficial for nanocrystalline silicon semiconductor growth with suppressing defective crack formation. The texture-etched ZnO:Al combined with textured glass exhibited pronounced haze properties that showed 60~90 % in overall spectral wavelength regions. This promising optical properties of double textured, transparent conducting substrate can be widely applied in silicon thin film photovoltaics and other optoelectronic devices.

fabrication of the Microfluidic LOC System with Photodiode (광 다이오드를 가진 Microfluidic LOC 시스템 제작)

  • 김현기;신경식;김용국;이상렬;김태송;양은경;주병권
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.16 no.12
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    • pp.1097-1102
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    • 2003
  • In this paper, we used only PR as etching mask, while it used usually Cr/AU as etching mask, and in order to fabricate a photosensor has the increased sensitivity, we investigated on the sensitivity of general type and p-i-n type diode. we designed microchannel size width max 10um, min 5um depth max 10um, reservoir size max 100um, min 2mm. Fabrication of microfluidic devices in glass substrate by glass wet etching methods and glass to glass fusion bonding. The p-i-n diode has higher sensitivity than photodiode, Considering these results, we fabricated p-i-n diodes on the high resistive(4㏀$.$cm) wafer into rectangle and finger pattern and compared internal resistance of each pattern. The internal resistance of pin diode can be decreased by the application of finger pattern has parallel resistance structure from 571Ω to 393Ω.

플라스마 디스플레이 패널의 격벽 형성의 에칭 메커니즘

  • Jeong Yu-Jin;Jeon Jae-Sam;Seong U-Gyeong;Kim Hyeong-Sun
    • Proceedings of the Korean Society Of Semiconductor Equipment Technology
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    • 2006.05a
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    • pp.198-201
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    • 2006
  • To produce fine structure with uniform surface of barrier ribs in PDP, acid etching process has been used in manufacture process. It is necessary to understand the mechanism of etching, particularly on the interface of ceramic fillers and matrix glass. We investigated the effect of ceramic fillers (ZnO, $Al_{2}O_3$) on the microstructure of borate glass system to find an etching mechanism of barrier ribs. The harrier ribs was etched with a several steps, dissolving a small amount of residual glass, taking out alumina fillers, and removing a cluster type of ZnO fillers and glass matrix.

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A STUDY ON THE SHEAR BOND STRENGTH OF THE COMPOSITE RESIN TO GLASS IONOMER CEMENT ACCORDING TO SURFACE TREATMENT METHODS OF GLASS IONOMER CEMENT (글라스 아이오노머 시멘트의 표면처리방법에 따른 복합레진과의 전단결합강도에 관한 연구)

  • No, Bong-Hwan;Hwang, Ho-Keel;Cho, Young-Gon
    • Restorative Dentistry and Endodontics
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    • v.20 no.1
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    • pp.362-371
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    • 1995
  • The purpose of this study was to evaluate the shear bond strength between composite resin and glass ionomer cement according to surface treatment methods of glass ionomer cement. Sixty round acrylic cylinders were fabricated. And then, a round undercut cavity(8 mm diameter, 2.5mm depth) was prepared in the center of the every acrylic cylinder. After all cavities were restored by using light-cured glass ionomer cement. A total of sixty acrylic cylinders restored with glass ionomer cement were divided into 4 groups according to surface treatment methods of glass ionomer cement. The surface treatment of each group were as follows : control group : no treatment Group 1 : acid etching Group 2 : sandblasting Group 3 : air-podwer abrasive polishing The composite resin was bonded to glass ionomer cement of each specimens. And the shear bond strength was tested with a universal testing machine at a cross-head speed of 1mm/min and 500kg in full scale. The results were as follows : 1. The sandblasting group(group 2) had the highest shear bond strength with $272.50{\pm}24.96\;kg/cm_2$ and the acid etching group(group 1) had the lowest shear bond strength with $192.89{\pm}29.32kg/cm_2$. 2. The no treated group(control group) had higher shear bond strength than acid etching group(group 1) (p<0.05). 3. The sandblasting group(group 2), air-powder abrasive polishing group(group 3) and no treated group(control group) had higher shear bond strength than the acid etching group(group 1) (p<0.05). 4. The sandblasting group(group 2) and air-powder abrasive polishing group(group 3) had higher shear bond strength than the no treatment group(control group), but there was not significant(p>0.05).

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CF4/O2/Ar Plasma Resistance of Al2O3 Free Multi-components Glasses (Al2O3 Free 다성분계 유리의 CF4/O2/Ar 내플라즈마 특성)

  • Min, Kyung Won;Choi, Jae Ho;Jung, YoonSung;Im, Won Bin;Kim, Hyeong-Jun
    • Journal of the Semiconductor & Display Technology
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    • v.21 no.3
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    • pp.57-62
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    • 2022
  • The plasma resistance of multi-component glasses containing La, Gd, Ti, Zn, Y, Zr, Nb, and Ta was analyzed in this study. The plasma etching was performed via inductively coupled plasma-reactive ion etching (ICP-RIE) using CF4/O2/Ar mixed gas. After the reaction, the glass with a low fluoride sublimation temperature and high content of P, Si, and Ti elements showed a high etching rate. On the other hand, the glass containing a high fluoride sublimation temperature component such as Ca, La, Gd, Y, and Zr exhibited high plasma resistance because the etch rate was lower than that of sapphire. Glass with low plasma resistance increased surface roughness after etching or nanoholes were formed on the surface, but glass with high plasma resistance showed little change in surface microstructure. Thus, the results of this study demonstrate the potential for the development of plasma-resistant glasses (PRGs) with other compositions besides alumino-silicate glasses, which are conventionally referred to as plasma-resistant glasses.