• 제목/요약/키워드: Etching Factor

검색결과 120건 처리시간 0.025초

EFFECTS OF AMINES ON COPPER ETCHING WITH H$_2$SO$_4$-$H_2O$$_2$ SYSTEMS

  • Kobayashi, Katsuyoshi;Minami, Naoki;Chiba, Atsushi
    • 한국표면공학회지
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    • 제32권3호
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    • pp.377-384
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    • 1999
  • The corrosion of copper in $H_2$$SO_4$ $-H_2$$O_2$ etching solutions with amines was investigated at various flow rates (v). Amine additives give a retardation of $H_2$$O_2$ decompositions, increases in both corrosion rates and etch factor, and a protection of etched copper surfaces. However n-alkylamine additives acted as corrosion inhibitors at v < 10cm/s, those acted as corrosion accelerators at v of 10-220cm/s. The maximum corrosion rate was obtained with about 0.1 molal concentration of additives. Steric effects of substituted groups suppressed the acceleration of copper corrosion. The increases in both corrosion rates and flow rates gave the increase in etch factor. Corrosion rates with n-alkylamine increased in the order of ethylamine < n-propylamine < n-butylamine, those with butylamine isomers tert- < sec- < iso- < n-butylamine, and those with amine additives of different number of substituted groups tri- < di- < mono-n-propylamine, respectively.

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Effect of moisture and drying time on the bond strength of the one-step self-etching adhesive system

  • Lee, Yoon;Park, Jeong-Won
    • Restorative Dentistry and Endodontics
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    • 제37권3호
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    • pp.155-159
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    • 2012
  • Objectives: To investigate the effect of dentin moisture degree and air-drying time on dentin-bond strength of two different one-step self-etching adhesive systems. Materials and Methods: Twenty-four human third molars were used for microtensile bond strength testing of G-Bond and Clearfil $S^3$ Bond. The dentin surface was either blot-dried or air-dried before applying these adhesive agents. After application of the adhesive agent, three different air drying times were evaluated: 1, 5, and 10 sec. Composite resin was build up to 4 mm thickness and light cured for 40 sec with 2 separate layers. Then the tooth was sectioned and trimmed to measure the microtensile bond strength using a universal testing machine. The measured bond strengths were analyzed with three-way ANOVA and regression analysis was done (p = 0.05). Results: All three factors, materials, dentin wetness and air drying time, showed significant effect on the microtensile bond strength. Clearfil $S^3$ Bond, dry dentin surface and 10 sec air drying time showed higher bond strength. Conclusions: Within the limitation of this experiment, air drying time after the application of the one-step self-etching adhesive agent was the most significant factor affecting the bond strength, followed by the material difference and dentin moisture before applying the adhesive agent.

레이저 유도에칭을 이용한 티타늄 미세채널 제조 (Fabrication of Titanium Microchannels by using Ar+ Laser-assited Wet Etching)

  • 손승우;이민규;정성호
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 2004년도 추계학술대회 논문집
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    • pp.709-713
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    • 2004
  • Characteristics of laser-assisted wet etching of titanium in phosphoric acid were investigated to examine the feasibility of this method for fabrication of high aspect ratio microchannels. Laser power, number of scans, etchant concentration, position of beam waist and scanning speed were taken into consideration as the major process parameters exerting the temperature distribution and the cross sectional profile of etched channels. Experimental results indicated that laser power influences on both etch width and depth while number of scans and scanning speed mainly affect on the etch depth. At a low etchant concentration, the cross sectional profile of an etched channel becomes a U-shape but it gradually turns into a V-shape as the concentration increases. On the other hand, surface of the laser beam focus with respect to the sample surface is found to be a key factor determining the bubble dynamics and thus the process stability. It is demonstrated that metallic microchannels with different cross sectional profiles can be fabricated by properly controlling the process parameters. Microchannels of aspect ratio up to 8 with the width and depth ranges of 8∼32 m and 50∼300 m, respectively, were fabricated.

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Nanopyramid Formation by Ag Metal-Assisted Chemical Etching for Nanotextured Si Solar Cells

  • Parida, Bhaskar;Choi, Jaeho;Palei, Srikanta;Kim, Keunjoo;Kwak, Seung Jong
    • Transactions on Electrical and Electronic Materials
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    • 제16권4호
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    • pp.206-211
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    • 2015
  • We investigated the formation of a nanopyramidal structure and fabricated nanotextured Si solar cells using an Ag metal-assisted chemical etching process. The nanopyramidal structure was formed on a Si flat surface and the nanotexturing process was performed on the p-type microtextured Si surface. The nanostructural formation shows a transition from nanopits and nanopores to nanowires with etching time. The nanotextured surfaces also showed the photoluminescence spectra with an enhanced intensity in the wavelength range of 1,100~1,250 nm. The photoreflectance of the nanotextured Si solar cells was strongly reduced in the wavelength range of 337~596 nm. However, the quantum efficiency is decreased in the nanotextured samples due to the increased nanosurface recombination. The nanotexturing process provides a better p-n junction impedance of the nanotextured cells, resulting in an enhanced shunt resistance and fill factor which in turn renders the possibility of the increased conversion efficiency.

Study for Improvement of Laser Induced Damage of 1064 nm AR Coatings in Nanosecond Pulse

  • Jiao, Hongfei;Cheng, Xinbing;Lu, Jiangtao;Bao, Ganghua;Zhang, Jinlong;Ma, Bin;Liu, Huasong;Wang, Zhanshan
    • Journal of the Optical Society of Korea
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    • 제17권1호
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    • pp.1-4
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    • 2013
  • For the conventionally polished fused silica substrate, an around 100 nm depth redeposition polishing layer was formed on the top of surface. Polishing compounds, densely embedded in the redeposition polishing layer were the dominant factor that limited the laser induced damage threshold (LIDT) of transmission elements in nanosecond laser systems. Chemical etching, super-precise polishing and ion beam etching were employed in different ways to eliminate these absorbers from the substrate. After that, Antireflection (AR) coatings were deposited on these substrates in the same batch and then tested by 1064 nm nano-pulse laser. It was found that among these techniques only the ion beam etching method, which can effectively remove the polishing compound and did not induce extra absorbers during the disposal process, can successfully improve the LIDT of AR coatings.

레이저를 이용한 결정질 실리콘 태양전지의 Double Texturing 제조 및 특성 (Characteristics of Double Texturization by Laser and Reactive Ion Etching for Crystalline Silicon Solar Cell)

  • 권준영;한규민;최성진;송희은;유진수;유권종;김남수
    • 한국재료학회지
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    • 제20권12호
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    • pp.649-653
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    • 2010
  • In this paper, double texturization of multi crystalline silicon solar cells was studied with laser and reactive ion etching (RIE). In the case of multi crystalline silicon wafers, chemical etching has problems in producing a uniform surface texture. Thus various etching methods such as laser and dry texturization have been studied for multi crystalline silicon wafers. In this study, laser texturization with an Nd:$YVO_4$ green laser was performed first to get the proper hole spacing and $300{\mu}m$ was found to be the most proper value. Laser texturization on crystalline silicon wafers was followed by damage removal in acid solution and RIE to achieve double texturization. This study showed that double texturization on multi crystalline silicon wafers with laser firing and RIE resulted in lower reflectance, higher quantum yield and better efficiency than that process without RIE. However, RIE formed sharp structures on the silicon wafer surfaces, which resulted in 0.8% decrease of fill factor at solar cell characterization. While chemical etching makes it difficult to obtain a uniform surface texture for multi crystalline silicon solar cells, the process of double texturization with laser and RIE yields a uniform surface structure, diminished reflectance, and improved efficiency. This finding lays the foundation for the study of low-cost, high efficiency multi crystalline silicon solar cells.

와동의 형태가 상아질과 복합레진 사이의 미세인장결합강도에 미치는 영향 (THE INFLUENCE OF CAVITY CONFIGURATION ON THE MICROTENSILE BOND STRENGTH BETWEEN COMPOSITE RESIN AND DENTIN)

  • 김예미;박정원;이찬영;송윤정;서덕규;노병덕
    • Restorative Dentistry and Endodontics
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    • 제33권5호
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    • pp.472-480
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    • 2008
  • 이 실험의 목적은 동일한 깊이의 상아질에서 제 6세대의 self-etching system을 사용하여 C-factor가 상아질과 복합레진 사이의 미세인장결합강도에 미치는 영향을 알아보는 것이다. 건전한 대구치 80개를 선정하여 와동의 바닥면적은 각각 $16mm^2$로 동일하게 하고 깊이를 조절하여 C-factor가 각각 0.25, 2, 3, 4인 4개의 군으로 나누었다. 각 군별로 총 20개의 치아를 할당하였으며 접착제와 복합레진의 조합에 따라 다시 4개의 소군에 치아 5개씩을 배정하였다 상아질 접착제는 AQ Bond Plus 또는 Xeno III를 사용하였고, 복합레진은 fantasists 또는 Ceram-X mono를 사용하였다. 제조사의 지시대로 상아질 접착제를 도포한 후 60초간 광중합하였다. 24시간 동안증류수에 보관후 단면적이 $1.0{\times}1.0mm^2$인 복합레진-상아질 beam을 형성하여 1mm/min의 속도로 미세 인장결합강도를 측정하였다. One-way ANOVA와 Tukey test, 그리고 Pearson correlation test로 통계 처리하여 다음과 같은 결과를 얻었다. 1. XenoIII와 Ceram-X mono군에서는 C-factor가 증가할수록 미세 인장결합강도가 유의하게 감소했으나 (p<0.05), 나머지 재료군에서 C-factor군간에 미세 인장결합강도의 유의한 차이가 없었다. 2. C-factor 3군에서는 Ad Bond Plus와 Fantasista군이 Xeno III와 Ceram-X mono군에 비해 높은 결합력을 보였으나 (p<0.05), C-factor 0.25군, 2군, 4군에서 4가지 접착제와 수복 레진의 조합 간에 유의한 차이가 없었다. 3. Fantasista군에서 C-factor와 미세 인장결합강도 사이에 일정한 상관관계를 발견할 수 없었고, Ceram-X mono군에서 C-factor가 증가할수록 미세 인장결합강도가 감소하는 경향을 보였다 (p<0.05). 이번 연구의 결과로 상아질의 깊이가 동일하고 6세대의 self-etching system을 사용하여 복합레진을 충전하는 경우 와동의 C-factor가 수복물의 미세 인장결합강도에 크게 영향을 미치지 않음을 알 수 있었다.

The effect of additional etching and curing mechanism of composite resin on the dentin bond strength

  • Lee, In-Su;Son, Sung-Ae;Hur, Bock;Kwon, Yong-Hoon;Park, Jeong-Kil
    • The Journal of Advanced Prosthodontics
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    • 제5권4호
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    • pp.479-484
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    • 2013
  • PURPOSE. The aim of this study was to evaluate the effects of additional acid etching and curing mechanism (light-curing or self-curing) of a composite resin on the dentin bond strength and compatibility of one-step self-etching adhesives. MATERIALS AND METHODS. Sixteen human permanent molars were randomly divided into eight groups according to the adhesives used (All-Bond Universal: ABU, Clearfil S3 Bond: CS3), additional acid etching (additional acid etching performed: EO, no additional acid etching performed: EX), and composite resins (Filtek Z-250: Z250, Clearfil FII New Bond: CFNB). Group 1: ABU-EO-Z250, Group 2: ABU-EO-CFNB, Group 3: ABU-EX-Z250, Group 4: ABU-EX-CFNB, Group 5: CS3-EO-Z250, Group 6: CS3-EO-CFNB, Group 7: CS3-EX-Z250, Group 8: CS3-EX-CFNB. After bonding procedures, composite resins were built up on dentin surfaces. After 24-hour water storage, the teeth were sectioned to make 10 specimens for each group. The microtensile bond strength test was performed using a microtensile testing machine. The failure mode of the fractured specimens was examined by means of an optical microscope at ${\times}20$ magnification. The data was analyzed using a one-way ANOVA and Scheffe's post-hoc test (${\alpha}$=.05). RESULTS. Additional etching groups showed significantly higher values than the no additional etching group when using All-Bond Universal. The light-cured composite resin groups showed significantly higher values than the self-cured composite resin groups in the Clearfil S3 Bond. CONCLUSION. The additional acid etching is beneficial for the dentin bond strength when using low acidic one-step self-etch adhesives, and low acidic one-step self-etch adhesives are compatible with self-cured composite resin. The acidity of the one-step self-etch adhesives is an influencing factor in terms of the dentin bonding strength and incompatibility with a self-cured composite resin.

다공성 실리콘의 제작조건과 열처리에 따른 Photoluminescence 변화 (Change in Photoluminescence of Porous Silicon with Processing Condition and Heat Treatment)

  • 서영제;최두진;박홍이;이덕희
    • 한국세라믹학회지
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    • 제33권10호
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    • pp.1170-1176
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    • 1996
  • Porous silicon was prepared by anodic reaction. The process was controlled by current density and etching time an the thickness change and the room temperature PL was measured. The thickness of porous silicon was increased with etching time and was decreased after critical time. It was the same as increasing current density. It needed only 15 sec to electropolish the surface of porous silicon above current density 70 mA/cm2. We can understand that increasing etching time leads narrow size of Si column by porous silicon formation mechanism. And the sample with narrow Si column revealed PL blue shift. The specimens were heated in the range of 300-1000$^{\circ}C$ in order to see PL changes. The heat treatment was proceeded in H2 atmosphere vacuum system to avoid oxidation. The PL was disappeared above 600$^{\circ}C$. In high temperature some sintered Si columns were observed in SEM photography. There was no difference of -Hx bonds which was suggested as evidence of hydride compounds luminescence between 500$^{\circ}C$ and 600$^{\circ}C$. Thus it is concluded that quantum confinement is major factor of PL of porous silicon.

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Nanotextured Si Solar Cells on Microtextured Pyramidal Surfaces by Silver-assisted Chemical Etching Process

  • Parida, Bhaskar;Choi, Jaeho;Palei, Srikanta;Kim, Keunjoo;Kwak, Seung Jong
    • Transactions on Electrical and Electronic Materials
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    • 제16권4호
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    • pp.212-220
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    • 2015
  • We investigated nanotextured Si solar cells using the silver-assisted chemical etching process. The nanotexturing process is very sensitive to the concentration of chemical etching solution. The high concentration process results in a nanowire formation for the nanosurfaces and causes severe surface damage to the top region of the micropyramids. These nanowires show excellent light absorption in photoreflectance spectra and radiative light emission in photoluminescence spectra. However, the low concentration process forms a nano-roughened surface and provides high minority carrier lifetimes. The nano-roughened surfaces of the samples show the improved electrical cell properties of quantum efficiency, conversion efficiency, and cell fill factor due to the reduction in the formation of the over-doped dead layer.