• 한국전기전자재료학회논문지
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• 제28권5호
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• pp.300-305
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• 2015

$WO_3$, $SiO_2$, and $TiO_2$ films with hydrophilic property are deposited by rf-magnetron sputtering. Their wettability is strongly depends on the presence or absence of the oxygen plasma etching on the glass substrates. The $TiO_2$ film of 50 nm-thick on the plasma etched glass shows a water contact angle (WCA) below $5^{\circ}$ which means a super-hydrophilic surface. However, WCA values are gradually degraded when the films are exposed under atmosphere, especially $WO_3$. In order to improve hydrophilic property, the degraded films can be again recovered by UV illumination for 10 sec using UV-light and the $TiO_2$ film shows a super-hydrophilic surface about $3^{\circ}$.

• Restorative Dentistry and Endodontics
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• 제29권4호
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• pp.353-364
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• 2004

The purpose of this study was to compare and to evaluate the combination use of 5 kinds of dentin adhesive systems and 5 kinds of composite resins using micro-shear bond test. Five adhesive systems (Prime & Bond NT (PBN). Onecoat bond (OC), Excite (EX), Syntac (SY), Clearfil SE bond (CS)) and five composite resins (Spectrum (SP), Synergy Compact (SC), Tetric Ceram (TC), Clearfil AP-X (CA), Z100 (Z1)) were used for this study ($5{\;}{\times}{\;}5{\;}={\;}25group$, n =14/group). The slices of horizontally sectioned human tooth were bonded with each bonding system and each composite resin, and tested by a micro-shear bond strength test. These results were analyzed statistically. The mean micro-shear bond strength of dentin adhesive systems were in order of CS (22.642 MPa), SY (18.368 MPa), EX (14.599 MPa). OC (13.702 MPa). PBN (12.762 MPa). The mean bond strength of self-etching primer system group (CS, SY) in dentin was higher than that of self-priming adhesive system groups (PBN, EX, OC) significantly (P<0.05). The mean bond strength of composite resins was in order of SP (19.008 MPa), CA (17.532 MPa). SC (15.787 MPa), TC (15.068 MPa). Z1 (14.678 MPa). Micro-shear bond strength of SP was stronger than those of other composite resins significantly (P < 0.05). And those of TC and Z1 were weaker than other composite resins significantly (P < 0.05). No difference was found in micro-shear bond strength of composite resin in self-etching primer adhesive system groups (CS, SY) statistically. However, there was significant difference of micro-shear bond strength of composite resin groups in self-priming adhesive systems group (PBN, EX, OC). The combination of composite resin and dentin adhesive system recommended by manufacturer did not represent positive correlation. It didn't seem to be a significant factor.

• 한국자기학회지
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• 제6권6호
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• pp.367-374
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• 1996

자기소자중 가장 기본이 되는 박막인덕터의 제작에 관한 연구를 수행하기 위하여, photolitho-graphy와 에칭공정을 도입하고, 도체간격 및 도체폭이 수십 $\mu\textrm{m}$, 도체코일 턴수가 각각 13회와 20회, 크기가 $4\;mm{\times}4\;mm$인 공심형 박막인덕터를 제작하였다. 이것을 마이크로스트립선로에 정착하고, network analyzer로 주파수 1 MHz ~ 1 GHz에서 신호의 반사계수법을 이용하여 간편하고 비교적 정확한 측정을 하였다. 특히, 공정이 간단한 습식 에칭공정을 도입하여, 안정된 에칭기술을 통해 양호한 미세패턴구조를 얻었다. 박막인덕터의 특성은, 크기가 같을때, L 및 Q값은 spiral형이 meander형 보다 큰 값을 갖는 반면, 공진주파수는 인덕턴스의 증가에 의한 영향으로 spiral형이 meander형보다 감소하였다.

• 반도체디스플레이기술학회지
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• 제22권3호
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• pp.130-135
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• 2023

Plasma-resistant ceramic (PRC) is a material used to prevent internal damage in plasma processing equipment for semiconductors and displays. The challenge is to suppress particles falling off from damaged surfaces and increase retention time in order to improve productivity and introduce the latest miniaturization process. Here, we confirmed the effect of suppressing plasma deterioration and reducing the etch rate through surface treatment of existing PRC with an initial illumination level of 200 nm. In particular, quartz glass showed a decrease in etch rate of up to 10%. Furthermore, it is believed that micro-scale secondary particles formed on the microstructure of each material grow as crystals during the fluoridation process. This is a factor that can act as a killer defect when dropped, and is an essential consideration when analyzing plasma resistance. The plasma etching suppression effect of the initial illumination is thought to be due to partial over etching at the dihedral angle of the material due to the sputtering of re-emission of Ar+-based cations. This means that plasma damage due to densification can also be interpreted in existing PRC studies. The research results are significant in that they present surface treatment conditions that can be directly applied to existing PRC for mass production and a new perspective to analyze plasma resistance in addition to simple etching rates.

• 한국분무공학회지
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• 제16권1호
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• pp.27-36
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• 2011

The impact force on the single and overlap region of twin spray was experimentally evaluated using visualization method in full cone type swirl nozzle spray. Visualization of spray was conducted to obtain the spray angle and breakup process. The photography/imaging technique, based on Particle Image Velocimetry (PIV) using high-speed camera, was adopted for the direct observation of droplet motion and axial velocity measurement, respectively. Droplet size was measured by Particle Motion Analyze System (PMAS). The purpose of this study is to provide fundamental information of spray characteristics, such as impact force, for higher etching factor in the practical wet etching system. It was found that the spray angle, axial velocity and impact force were increased with increasing the nozzle pressure while droplet size decreased with increasing the nozzle pressure. Droplet size increased as the distance from nozzle tip was decreased. The impact force of twin spray in the overlap region was about 63.29, 67.02, 52.41% higher than that of single spray at 40, 50 and 60 mm of nozzle pitch, respectively. Also, the nozzle pitch was one of the important factors in the twin spray characteristics.

• 한국전기전자재료학회논문지
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• 제11권6호
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• pp.458-464
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• 1998

This paper gives characterization of substrate and PZT(53/47) thin film deposited by metalorganic decomposition, which is concerned in deposition process and device fabrication process, to fabricate micro electro mechanical system (MEMS) device with piezoelectric material. The PZT thin films deposited by MOD at 700^{\circ}C$ for 30 minutes had a polycrystallinity, that is, no substrate dependence, while different interface were developed depending on the bottom electrodes. Such a structural variation could influence on not only the properties of the PZT film but also etching process for fabricating MEMS devices. Therefore the electrode structure is a very important factor in the deposition of the PZT film during etching process by HF acid for MEMS device with piezoelectric material. Piezoelectric coefficients of the PZT films on the different substrates were 40 and 80 pm/V at an applied voltage of 4V. Based in these results, it was possible for deposition of the PZT film by MOD to apply MEMS device fabrication process based on piezoelectricity after selection of proper bottom electrode.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.263-263
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• 2011

본 연구에서는 DBD (Dielectric Barrier Discharge)방식의 상압 플라즈마를 이용하여 FPD (flat panel display) 공정에 사용되는 a-Si, Si3N4의 식각 공정 특성을 평가하였다. 사용된 DBD 반응기는 기존의 blank planar plate 형태의 Power가 인가되는 anode 부분과 Dielectric Barrier 사이 공간을 액상의 도전체로 채워 넣은 형태의 전극이 사용 하였으며, 인가 Power는 40kHz AC 최대인가 전압 15 kVp를 사용 하였다. 방전 가스는 N2, 반응가스로는 CDA (Clean Dry Air)와 NF3, 액상의 Etchant를 사용 하였으며 모든 공정은 In-line type으로 시편을 처리 하였다. NF3의 경우 30 mm/sec 이송속도 1회 처리 기준 a-Si 1300${\AA}$, Si3N4 1900${\AA}$의 식각 두께를 보였으며 a-Si : Si3N4 선택비는 N2, CDA의 조절을 통하여 최대 1:2에서 4:1 정도까지 변화가 가능하였다. 균일도는 G2 (370 mm${\times}$470 mm)의 경우 5.8 %의 균일도를 보이고 있다. 이외에도 NF3 공정의 경우 실제 TFT-LCD 공정 중 n+ channel (n+ a-Si:H)식각 공정에 적용하여 5.5 inch LCD panel feasibility를 확인 할 수 있었다. 액상 Etchant (HF수용액, NH4HF2)는 버블러를 사용하여 기화 시켜 플라즈마 소스를 통해 1차적으로 활성화 시키고 기존 DBD 반응기에 공급해 주는 형태로 평가를 진행하였다. 식각 특성은 30mm/sec 이송속도에서 a-Si $25{\AA}$ 정도로 가스 형태의 Etchant에 비해 매우 낮은 수준이나 Etching rate 향상을 위한 factor 파악 및 개선을 위한 연구를 진행 하였다.

• Journal of Electrical Engineering and information Science
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• 제2권6호
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• pp.212-216
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• 1997

A new metal tip fabrication process for low voltage operation is reported in this paper. The key element of the fabrication process is that isotropic silicon etching and oxidation process used in silicon tip fabrication is utilized for gate hole size reduction and gate oxide layer. A metal FEA with 625 tips was fabricated in order to demonstrate the validity of the new process and submicron gate apertures were successfully obtained from originally 1.7$\mu\textrm{m}$ diameter mask. The emission current above noise level was observed at the gate bias of 50V. The required gate voltage to obtain the anode current of 0.1${\mu}\textrm{A}$/tip was 74V and the emission current was stable above 2${\mu}\textrm{A}$/tip without any disruption. The local field conversion factor and the emitting area were calculated as 7.981${\times}$10\ulcornercm\ulcorner and 3.2${\times}$10\ulcorner$\textrm{cm}^2$/tip, respectively.

• 대한기계학회논문집B
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• 제32권12호
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• pp.915-923
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• 2008

The performance experiments for a microchannel printed circuit heat exchanger (PCHE) of high-performance and high-efficiency on the two technologies of micro photo-etching and diffusion bonding were performed in this study. The microchannel PCHE were experimentally investigated for Reynolds number in ranges of 100 $\sim$ 700 under various flow conditions in the hot side and the cold side. The inlet temperatures of the hot side were conducted in range of $40^{\circ}C\;{\sim}\;50^{\circ}C$ while that of the cold-side were fixed at $20^{\circ}C$. In the flow pattern, the counter flow was provided 6.8% and 10 $\sim$ 15% higher average heat transfer rate and heat transfer performance than the parallel flow, respectively. The average heat transfer rate, heat transfer performance and pressure drop increases with increasing Reynolds number in all the experiment. The increasing of inlet temperature in the experiment range has not an effect on the heat transfer performance while the pressure drop decrease slightly with that of inlet temperature. The experimental correlations to the heat transfer coefficient and pressure drop factor as a function of the Reynolds number have been suggested for the microchannel PCHE.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.890-893
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• 2004

In this study, Spiral inductors on the $SiO_2/Si$(100) substrate were fabricated by the magnetron sputtering method. Cu thin film with the thickness of 2 ${\mu}m$ was deposited on the substrate. Also we fabricated square inductors through the wet chemical etching technique. The inductors are completely specified by the turn width and the spacing between spirals. Both the width and spacing between spirals were varied from 10 to 60${\mu}m$ and from 20 to 70 ${\mu}m$, respectively. Inductance and Q factor dependent on the frequency were investigated to analyze performance of spiral inductors.