• Title/Summary/Keyword: Etching Characteristics

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Operational characteristic of flux-lock type HTSC-FCL (자속구속형 고온초전도 전류제한기 동작 특성)

  • Lim, Sung-Hun;Choi, Hyo-Sang;Kang, Hyeong-Gon;Ko, Seok-Cheol;Lee, Jong-Hwa;Choi, Myung-Ho;Song, Jae-Joo;Han, Byoung-Sung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.05b
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    • pp.20-23
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    • 2003
  • The operational characteristics of flux-lock type high-Tc superconducting fault currentlimiters(HTSC-FCLs) was described and currents equation at each coil was derived from equivalent circuit. $YBa_{2}Cu_{3}O_{7-x}$(YBCO) thin film was used as the current limiting elements of the flux-lock type HTSC-FCL, which were fabricated by etching the YBCO thin film into 2 mm wide and 420 mm long meander line consisting of foureen stripes with different length. The 2nd peak on the current of coil 2 after a fault disappeared by current of the 3rd winding, which was installed in the flux-lock type HTSC-FCL.

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Characteristics of doping process with various wafer thicknesses for thin crystalline silicon solar cell application (박형 결정질 실리콘 태양전지 제작을 위한 웨이퍼 두께에 따른 특성 연구)

  • Jeong, Kyeong-Taek;Lee, Hee-Jun;Song, Hee-Eun;Yoo, Kwon-Jong;Yang, O-Bong
    • 한국태양에너지학회:학술대회논문집
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    • 2011.04a
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    • pp.101-104
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    • 2011
  • Many studies in crystalline silicon solar cell fabrication have been focused on high efficiency and low cost. In this paper, we carried out the doping procedure by varying the silicon wafer thicknesses and sheet resistance. The silicon wafers with various thicknesses were obtained by shiny etching and texturing. The thicknesses of wafers were 100, 120, 150, and $180{\mu}m$. The emitter layer formed by $POCl_3$ doping process had sheet resistance with 40 and $80{\Omega}/sq$ for selective emitter application. This experiment indicated wafer thickness did not influence sheet resistance but lifetime was strongly effected.

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The Dry Etching Characteristics in Contact Process (접촉공정에서 건식각 특성)

  • Lee, Chang-Weon;Kim, Jae-Jeong;Kim, Dae-Su;Lee, Jong-Dae
    • Journal of the Korean Applied Science and Technology
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    • v.16 no.1
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    • pp.105-115
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    • 1999
  • P-type의 단결정 실리콘 위에 $1000{\AA}$의 열산화막을 성장시킨후 $5500{\AA}$의 다결정 실리콘으로 증착된 시료를 가지고 $HBr/Cl_2/He-O_2$ 혼합기체로 식각할 때 시료의 식각 특성에 관한 $H_2-O_2$ 기체함량. RF 전력, 압력에 대한 영향을 XPS(X-ray photoelectron Spectroscopy)와 SEM(Scanning Electron Microscopy)으로 조사하였다. $HBr/Cl_2/He-O_2$ 혼합기체로 식각되는 동안 형성된 다결정 실리콘 식각속도는 $H_2-O_2$ 함량 증가에 따라 증가하였으며 식각잔유물은 RF 전력과 압력변화에 의해 영향은 받지 않는 것으로 나타났으며, 다결정 실리콘 측벽에서의 증착속도는 낮은 RF전력과 높은 압력에서 높게 나타났다. 다결정 실리콘 식각 잔유물의 결합에너지는 안정한 $SiO_2$인 열산화막의 경우보다 높으므로 식각 잔유물은 $SiO_{\chi}({\chi}>2)$의 화합결합을 가지는 산화물과 같은 잔유물로 생각된다.

Evaluation of Dicing Characteristics of Diamond Micro-blades with Cu/Sn Binder Including Etched WS2 Particles (표면 부식 처리한 WS2 입자를 첨가한 Cu/Sn계 다이아몬드 마이크로 블레이드의 절삭특성)

  • Kim, Song-Hee;Jang, Jaecheol
    • Journal of the Korean institute of surface engineering
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    • v.46 no.1
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    • pp.22-28
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    • 2013
  • $WS_2$ particles were added to micro-diamond blades with Cu/Sn binding metal as lubricants to improve cutting efficiency. It was found in previous works that the added $WS_2$ lubricant could reduce remarkably the momentary energy consumption during dicing tests but increased wear rate slightly owing to weak bonding between lubricant particles and bond metals. In the present work, the surface of $WS_2$ lubricant particles were etched for activating the surface of $WS_2$ particles that provide even distribution of particles during powder mixing process and improvement of wetting at the interfaces between $WS_2$ particles and molten Cu/Sn bond metals during pressurized sintering so that could provide the improved strength of micro-blades and result in extended life. Chipping behavior of workpiece with the types of micro-blades including $WS_2$ were compared because it is important in semiconductor and micro-packaging industries to control average roughness and straightness of sliced surface which is closely related with quality.

Selectivity and Characteristics of $\beta$-SiC Thin Film Deposited on the Masked Substrate (기판-Mask 재료에 따른 $\beta$-SiC 박막 증착의 선택성과 특성 평가)

  • 양원재;김성진;정용선;최덕균;전형탁;오근호
    • Journal of the Korean Ceramic Society
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    • v.36 no.1
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    • pp.55-60
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    • 1999
  • ${\beta}$-SiC thin film was deposited on a Si substrate without buffer layer using a single precursor of Hexamethyldisilane (Si2(CH3)6) by chemical vapor deposition method. HCI gas was introduced into hexamethyldisilane /H2 gas mixture, and the feeding schedule of HCI and precursor gases was modified in order to enhance the selectivity of SiC deposition between a Si substrate and a SiO2 mask. The effect of HCI gas on the surface roughness of the SiC film was investigated and typical electrical properties of the SiC film were also investigated by Hall measurement.

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New mechanism of thin film growth by charged clusters

  • Hwang, Nong-Moon;Kim, Doh-Yeon
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.9 no.3
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    • pp.289-294
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    • 1999
  • The charged clusters or particles, which contain hundreds to thousands of atoms or even more, are suggested to from in the gas phase in the thin film processes such as CVD, thermal evaporation, laser ablation, and flame deposition. All of these processes are also phase synthesis of the nanoparticels. Ion-induced or photo-induced nucleation is the main mechanism for the formation of these nanoclusters or nanoparticles in the gas phase. Charge clusters can make a dense film because of its self-organizing characteristics while neutral ones make a porous skeletal structure because of its Brownian coagulation. The charged cluster model can successfully explain the unusual phenomenon of simultaneous deposition and etching taking place in diamond and silicon CVD processes. It also provides a new interpretation on the selective deposition on a conducting material in the CVD process. The epitaxial sticking of the charged clusters on the growing surface is getting difficult as the cluster size increases, resulting in the nanostructure such as cauliflower or granular structures.

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Study on the surface characteristics of parylene-C films in inductively coupled $O_2/CF_4$ gas plasma

  • Ham, Yong-Hyun;Baek, Kyu-Ha;Park, Kun-Sik;Shin, Hong-Sik;Yun, Ho-Jin;Kwon, Kwang-Ho;Do, Lee-Mi
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.1399-1401
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    • 2009
  • In this article, we reported the results of etching polymonochloro-para-xylylene (parylene-C) thin films using inductively coupled plasma and $CF_4/O_2$ gas mixture. The $CF_4$ gas fraction increased up to the approximately 16 %, the polymer etch rate increased in the range of 277 - 373 nm/min. It confirmed that the etch rate of the parylene-C mainly depended on the O radical density in the plasma. Using a contact angle measurement, the contact angle increased with increasing the $CF_4$ fraction. Moreover, the contact angle was highly related a $CF_x$ functional group on parylene films.

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Fabrication of ZnO TFTs by micro-contact printing of silver ink electrodes

  • Shin, Hong-Sik;Yun, Ho-Jin;Nam, Dong-Ho;Choi, Kwang-Il;Baek, Kyu-Ha;Park, Kun-Sik;Do, Lee-Mi;Lee, Hi-Deok;Wang, Jin-Suk;Lee, Ga-Won
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.1600-1603
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    • 2009
  • In this work, we have fabricated inverted staggered ZnO TFTs with 1-${\mu}m$ resolution channel length by micro contact printing (${\mu}$-CP) method. Patterning of micro scale source/drain electrodes without etching is successfully achieved by micro contact printing method by using silver ink and polydimethylsiloxane (PDMS) stamp. And the time dependent characteristics of the sheet resistance show that Ag inklayer could be used as source and drain electrodes for ZnO TFTs.

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The Analysis of Water Tree Degradations in Underground Distribution Cables Using Image Measurement (가교폴리에틸렌 지중케이블에서 화상계측을 이용한 수트리 열화현상 분석)

  • Kim, Duck-keun;Lim, Jang-Seob;Lee, Jin;Lee, Joon-Ung;Kim, Tae-Sung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1998.06a
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    • pp.19-23
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    • 1998
  • Water tree degradations have been considered as one of the most important causes of failure in underground distribution cables with polymeric insulation. Water tree growth is a preliminary step in the sequence of electrical tree initiation and electrical breakdown of the insulation. In this paper, needle electrode is made use of the etching methods and the pellet type specimen is made to observe the water tree in succession. In previous methods are able to observe the tree degradations without cutting and dyeing. The water tree image is recorded on VTR with CCD camera. The tree length of X, Y axis direction and aging area(treeing area) are calculated with image measurement. As a result of this study, water tree is observed by non-destructive method. Electrical tree is initiated from needle electrode tip only but water tree is initiated from total area of water electrode. Electrical tree owing to water treeing is initiated at low electric field and grown with discontinuously. Namely, water tree is shown up a different characteristics of tree growth.

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A Laterally-Driven Bistable Electromagnetic Microrelay

  • Ko, Jong-Soo;Lee, Min-Gon;Han, Jeong-Sam;Go, Jeung-Sang;Shin, Bo-Sung;Lee, Dae-Sik
    • ETRI Journal
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    • v.28 no.3
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    • pp.389-392
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    • 2006
  • In this letter, a laterally-driven bistable electromagnetic microrelay is designed, fabricated, and tested. The proposed microrelay consists of a pair of arch-shaped leaf springs, a shuttle, and a contact bar made from silicon, low temperature oxide (LTO), and gold composite materials. Silicon-on-insulator wafers are used for electrical isolation and releasing of the moving microstructures. The high-aspect-ratio microstructures are fabricated using a deep reactive ion etching (DRIE) process. The tandem-typed leaf springs with a silicon/gold composite layer enhance the mechanical performances while reducing the electrical resistance. A permanent magnet is attached at the bottom of the silicon substrate, resulting in the generation of an external magnetic field in the direction vertical to the surface of the silicon substrate. The leaf springs show bistable characteristics. The resistance of the pair of leaf springs was $7.5\;{\Omega}$, and the contact resistance was $7.7\;{\Omega}$. The relay was operated at ${\pm}0.12\;V$.

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