• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2003년도 추계학술대회 논문요약집
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• pp.13-13
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• 2003

• 센서학회지
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• 제32권5호
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• pp.328-333
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• 2023

This study experimentally verified the etch rate of the SiO₂ sacrificial layer etching process with a single etch hole using vapor-phase hydrogen fluoride (VHF) etching. To fabricate small-sized polysilicon etch holes, both circular and triangular pattern masks were employed. Etch holes were fabricated in the polysilicon thin film on the SiO₂ sacrificial layer, and VHF etching was performed to release the polysilicon thin film. The lateral etch rate was measured for varying etch hole sizes and sacrificial layer thicknesses. Based on the measured results, we obtained an approximate equation for the etch rate as a function of the etch hole size and sacrificial layer thickness. The etch rates obtained in this study can be utilized to minimize structural damage caused by incomplete or excessive etching in sacrificial layer processes. In addition, the results of this study provide insights for optimizing sacrificial layer etching and properly designing the size and spacing of the etch holes. In the future, further research will be conducted to explore the formation of structures using chemical vapor deposition (CVD) processes to simultaneously seal etch hole and prevent adhesion owing to polysilicon film vibration.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 하계학술대회 논문집 C
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• pp.1924-1926
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• 2001

A novel wet release process ($\mu$ CARP - Micro Channel Assisted Release Process) for releasing an extreme large-area plate structure without etching hole is proposed and experimented. Etching holes in conventional process reduce a effective area and degrade an optical characteristics by a diffraction. In addition, as the area of a released structure increases, the stietion becomes more serious. The proposed process resolves these problems by the introduction of a micro fluidic channel beneath the structure which will be released. In this paper, a 5 mm${\times}$5mm-single crystal silicon plate structure was released by the proposed $\mu$CARP without etch holes on the structure. The variation in etching time with respect to the of the introduced micro channel is also examined. This process is expected to be beneficial for the actuator of a nano-scale data storage and the scanning mirror.

• 전자공학회논문지D
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• 제35D권2호
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• pp.60-69
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• 1998

Polysilicon surface mdoification tecnique is developed to reduce the sticking of microstructures fabricated by micromachining. Modified anti-sticking grain holes are simply formed by two-step dry eth without additional photolithography nor deposition of thin films. Both process-induced sticking and in-use sticking are successfully reduced more than two times by adopting grain holed polysilicon substrate. A sticking model for cantilever beam is derived. This model includes bending moment stems from stress gradient along the thickness directionof structural polysilicon. Because the surface tension of rinse liquid and the surface energy of the solids to be stuk tend to decrease in recently developed anti-sticking techniques, the effect of stress gradient will play an important role to analyze the sticking phenomena. Effect of the temperature during post-release rinse and dry is modelled and verified experimentally. Based on developed anti-sticking polysilicon structure and the sticking model, sticking of microstructure, fabricated by simple wet process including sacrificial layer etch and rinse with deionized water without special equimpment for post-release rinse and dry was alleviated more than 3.5 times.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 하계학술대회 논문집 C
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• pp.1893-1895
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• 2001

In this paper, novel release technique using wet etch is proposed. The results of this technique and the results of SAMs (Self-Assembled monolayers) coated after release using this technique are compared. Fabricated structure have 100 um in width and experimental length is from 100 um to 1 mm. Thickness of aluminum sacrificial layer is 2 um and structure thickness is 2.5 um. Cantilevers and bridges are fabricated with electroplated gold and silicon nitride deposited on substrate. An aluminium sacrificial layer was evaporated thermally and removed in various wet etching solutions. Detachment length of cantilever is 200 um and detachment length of bridge is 1 mm after isooctane rinsing. And the SAMs coating condition which is appropriate for gold and nitride are studied respectively.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권6호
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• pp.494-502
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• 1999

This paper represents an electrostatic micro plate resonator which consists of a rigid plate suspended with four bridges and a counter electrode. The bridges of the resonator are designed corrugated so that the residual stress are released. The FEM simulation results confirmed that the deflection characteristic of the corrugated bridge is hardly affected by the initial residual tensile stress. One resonator with the corrugated bridges and the other with the flat bridges were fabricated by the boron diffusion process and the anisotropic etch process. The vertical deflection of the fabricated electrostatic resonator was measured with a laser vibrometer, and the data were compared with the calculation results. The deflection of the resonator with the flat bridges is smaller than the deflection of that with the corrugated ones because of the residual stress. The residual stress release effect was confirmed by the fact that the measured deflection of the resonator with the corrugated bridges in close to the calculated deflection of the resonator with the flat ones with the initial stress neglected.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 하계학술대회 논문집 C
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• pp.1979-1981
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• 2002

새로운 방식의 일체형 flexible sensor module을 제작하였다. MEMS공정을 이용하여 제작된이 센서 모듈은 배선기판은 물론 strain sensor 역시 임의의 곡면에 실장을 위해 자유로운 굽힘이 가능하도록 제작되었다. 실리콘웨이퍼에 구현된 piezoresistor 스트레인 센서는 release-etch 방법을 통해 웨이퍼로부터 분리되어, 폴리이미드를 기판으로 하는 Flexible Sensor Array Module로 완성되었다. 소자와 기판을 따로 제작한 후 조립하는 기존의 방식에 비해, 웨이퍼 위에서 flexible 기판을 형성하여 수율이 높고 사진공정의 정밀도를 그대로 보전한 기판과 센서 어레이의 패키징이 가능하였으며, 칩을 기판에 실장하기 위한 정밀한 조립공정도 불필요하였다. 폴리이미드 기판은 전기도금을 통해 회로를 구성하여 1단계 패키징 (die to chip carrier)과 2단계 패키징 (chip to substrate)을 웨이퍼 레벨에서 완성하였다. 마지막으로 불산 용액을 통해 희생층을 제거함으로서 웨이퍼로 부터 센서어레이 모듈을 분리 하였다.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2002년도 춘계 기술심포지움 논문집
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• pp.74-78
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• 2002

MEMS공정을 이용하여 폴리실리콘의 piezoresistivity를 이용한 스트레인 센서어레이를 제작하였고, 이 센서 어레이를 flexible substrate에 패키징하는 공정을 개발하였다. 실리콘 웨이퍼에 표면 가공(surface micromachining)된 센서는 폴리이미드 코팅, release-etch 방법을 통해 웨이퍼로부터 분리되어 폴리이미드를 기판으로 하는 flexible sensor array module을 완성할 수 있었다. 공정은 희생층과 절연층을 증착하고 폴리실리콘 0.5 $\mu\textrm{m}$을 증착, 도핑 및 패터닝하여 센서 어레이를 구성하였다. 이 센서어레이를 flexible substrate에 패키징 하기 위해서 폴리이미드를 코팅하여 15 $\mu\textrm{m}$의 막을 구성하였고, 100% $O_2$RIE를 이용한 선택적 식각 방법으로 via hole을 구성하였다. 이후 전기도금을 통해 회로를 구성하여 1단계 패키징(die to chip carrier)과 2단계 패키징(chip to substrate)을 웨이퍼 레벨에서 완성하였다. 희생층을 제거함으로서 웨이퍼로부터 센서어레이 모듈을 분리하였다. 제작되어진 센서 모듈은 임의의 곡면에 실장이 가능하도록 충분한 flexibility를 얻을 수 있었다.

• 한국분말재료학회지
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• 제30권1호
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• pp.53-64
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• 2023

Atomic layer etching (ALE) is a promising technique with atomic-level thickness controllability and high selectivity based on self-limiting surface reactions. ALE is performed by sequential exposure of the film surface to reactants, which results in surface modification and release of volatile species. Among the various ALE methods, thermal ALE involves a thermally activated reaction by employing gas species to release the modified surface without using energetic species, such as accelerated ions and neutral beams. In this study, the basic principle and surface reaction mechanisms of thermal ALE?processes, including "fluorination-ligand exchange reaction", "conversion-etch reaction", "conversion-fluorination reaction", "oxidation-fluorination reaction", "oxidation-ligand exchange reaction", and "oxidation-conversion-fluorination reaction" are described. In addition, the reported thermal ALE processes for the removal of various oxides, metals, and nitrides are presented.

• 한국가스학회지
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• 제24권5호
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• pp.74-81
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• 2020

일반적으로 반도체를 제조할 때는 인화성, 독성, 부식성의 유해·위험물질이 다수 사용되며, 특히 화학적 증착(CVD), 식각(Etch) 등의 공정에서는 특수가스를 사용하여 반도체를 제조하고 있다. 특수가스는 압축 또는 액화가스의 상태로 용기에 충전되어 있는데, 특수가스를 반도체 제조공정에 공급하는 설비로서 가스캐비닛(Gas Cylinder Cabinet)이 사용되고 있다. 이러한 가스공급시스템 내에서 실린더 이상 발생 시 배관·계측기 등 공급시스템의 안전 확보를 위해 가스실린더에 설치된 압력방출장치를 통해 가스가 방출하게 되는데, 이 경우 가스캐비닛 내부에 방출되는 가스가 캐비닛 외부로 누출될 위험성이 존재한다. 따라서 가스캐비닛 내부의 유체유동을 분석하여 누출에 따른 위험성을 파악하고 이에 대한 위험도 감소를 위한 대책을 제시하고자 한다.