• 한국진공학회지
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• 제15권4호
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• pp.387-394
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• 2006

본 연구에서는 반응성 이온빔을 low-angle forward reflection으로 생성시킨 중성빔을 이용하여 Aspect Ratio Dependent Etching (ARDE) 현상이 제거되는 효과에 대하여 연구하였다. SF6 가스를 사용하여 Inductively Coupled Plasma system과 이온빔으로 각각 poly-Si 을 식각한 결과 ARDE 현상을 관찰할 수 있었으며, Si 기판위에 증착된 Poly-Si을 식각하는 것보다 $SiO_2$ 기판 위에 증착된 Poly-Si을 식각하는 것이 ARDE 현상이 더 많이 나타난다는 것을 관찰할 수 있었다. 반면에 같은 공정 조건에서 중성빔으로 poly-Si을 식각한 결과 이러한 ARDE 현상이 효과적으로 제거되었음을 관찰할 수 있었다. 중성빔을 이용하여 ARDE 현상이 제거되는 원리는 2 차원의 XOOPIC code 와 TRIM code를 사용하여 여러가지 나노스케일의 형상을 컴퓨터 시뮬레이션하여 증명하였다.

• Restorative Dentistry and Endodontics
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• 제32권1호
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• pp.9-18
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• 2007

이 연구의 목적은 와동벽에서 다른 위치에서의 상아질 접착제의 두께를 평가하고, 이런 다양한 접착제의 두께와 미세 인장 강도 사이의 관계를 평가하기 위한 것이다. 여섯 개의 인간 대구치에 모든 상아질 면이 노출되도록 I급 와동을 형성하였다 3개의 치아는 filled adhesive ($Clearfil^{TM}$ SE bond)를 와동 내에 도포하였고, 다른 3개의 치아는 unfilled adhesives ($Scotchbond^{TM}$ Multi Purpose)를 도포하였다. 형광 현미경을 이용하여 접착층의 형태와 두께를 관찰하였다. 접착제의 두께는 수직 와동벽을 따라 와동 변연, 와동벽 1/2, 와동 내각의 세 지점에서 측정되었다. $Scotchbond^{TM}$ Multi Purpose와 $Clearfil^{TM}$ SE bond가 와동 변연과 와동벽 1/2, 와동 내각에서의 접착제의 두께를 재현하여 미세 인장 결합 강도를 측정하였다. 이 실험의 결과에서 두 가지 상아질 접착제 모두에서 와동 내각에서의 접착제의 두께가 와동 변연과 와동벽 1/2위치에서의 두께보다 두꺼웠으며, 와동 내각의 두꺼운 접착제의 미세 인장 결합 강도는 와동 변연과 와동벽 1/2에서의 얇은 접착제 두께의 미세 인장 결합 강도보다 유의성 있게 높게 나타났다.

• Bulletin of the Korean Chemical Society
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• 제24권11호
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• pp.1613-1617
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• 2003

In the phosphoric acid based etchant, the dissolution rates of Mo films were measured by microgravimetry and the corrosion potentials of Mo and Al were estimated by Tafel plot method with various concentrations of nitric acid. Dissolution rate of Mo increased with the nitric acid concentration and reached a limiting value at high concentration of nitric acid in ambient condition. Corrosion potentials of Mo and Al shifted to positive direction and the difference between potentials of both metals was about 1,100 mV and 1,200 mV with 1% and above 4% of $HNO_3$, respectively. For a Mo/Al bilayers, the dissolution rate inversion is the main reason for good taper angle in shower etching process. Taper angles are observed by scanning electron microscope (SEM) after wet etching process for Mo/Al layered films with different concentrations of $HNO_3$. In the etch side profile, it was found that Al corroded faster than Mo below 4% of $HNO_3$ in dip etching process, however, Mo corroded faster above 4%. Trend for variation of taper angle of etched side of Mo/Al layered film can be explained by considering the effect corrosion rates of both metals with various concentrations of $HNO_3$.

• 복식문화연구
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• 제32권1호
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• pp.58-69
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• 2024

The purpose of this study was to develop the Functional golf inner-wear by preventing the injuries and enhancing the performance of the Golf swing by checking the influence of the wearing of the functional golf inner-wear considering golf characteristics on the Swing trajectory and Shot distance. Functional inner-wear effective for golf swing was manufactured using the sports taping method. Changes in driver and iron swing before and after wearing the functional golf inner-wear manufactured in this way were measured using trackman equipment. Measurement variables were limited to Club Speed, Attack Angle, Club Path, Ball Speed, Smash Factor, and Priority. Before and after wearing functional golf inner-wear, there were statistically significant differences in driver club speed, iron club speed, driver etch angle, iron club pass, driver ball speed, driver smash factor, iron smash factor, driver carry, iron carry, and right shoulder joint proprioceptive sensory ability. As a result, functional golf inner-wear is effective for ball speed, impact, and carry by increasing club speed and efficient swing. Future research will focus on the development of functional golf that can improve the swing ability in a short game that plays an important role in the golf game through various sports taping grafting technique, textile, special material, film, Research on functional golf inner-wear.

• Transactions on Electrical and Electronic Materials
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• 제8권5호
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• pp.211-214
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• 2007

Chemical and morphological changes of phenol formaldehyde-based photoresist after $O_2$ radiofrequency(RF) plasma treatment depending on exposure time and source power were investigated. It was found that etch rate of photoresist sharply increased after discharge turn on and reached a limit with increase in plasma exposure time. Contact angle measurements and X-ray photoelectron spectroscopy(XPS) analysis showed that the surface chemical structure become nearly constant after 15 sec of the treatment. Atomic force microprobe(AFM) measurements were shown that surface roughness was increased with plasma exposure time.

• 반도체디스플레이기술학회지
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• 제13권3호
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• pp.13-19
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• 2014

Phosphoric acid was used as etching agent instead of conventional peroxide - based chemicals for forming pattern of ultra definition display. Etchant was synthesized by mixing etching agent, oxidation agent, buffer solution, and additive into solvent, deionized water. Thicknesses of copper, main metal of ultra definition display, for etching, were 10,000 and $30,000{{\AA}}$. Etch stop of good low skew for proper pattern formation has been occurred at the content ratio of phosphoric acid 60 - 64%, nitric acid 4 - 5%, additive(potassium acetate) 1 - 3%. Buffer solution(acetic acid) decreased the metal contact angle $63.07^{\circ}$ to $42.49^{\circ}$ for benefiting pattern formation. Content variations on four components (phosphoric acid, nitric acid, acetic acid, potassium acetic acid) of the etchant with storage time were within 3 wt% after 24 hrs of etching work.

• 반도체디스플레이기술학회지
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• 제22권3호
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• pp.130-135
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• 2023

Plasma-resistant ceramic (PRC) is a material used to prevent internal damage in plasma processing equipment for semiconductors and displays. The challenge is to suppress particles falling off from damaged surfaces and increase retention time in order to improve productivity and introduce the latest miniaturization process. Here, we confirmed the effect of suppressing plasma deterioration and reducing the etch rate through surface treatment of existing PRC with an initial illumination level of 200 nm. In particular, quartz glass showed a decrease in etch rate of up to 10%. Furthermore, it is believed that micro-scale secondary particles formed on the microstructure of each material grow as crystals during the fluoridation process. This is a factor that can act as a killer defect when dropped, and is an essential consideration when analyzing plasma resistance. The plasma etching suppression effect of the initial illumination is thought to be due to partial over etching at the dihedral angle of the material due to the sputtering of re-emission of Ar+-based cations. This means that plasma damage due to densification can also be interpreted in existing PRC studies. The research results are significant in that they present surface treatment conditions that can be directly applied to existing PRC for mass production and a new perspective to analyze plasma resistance in addition to simple etching rates.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.277-277
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• 2011

디스플레이의 기술발전에 의해 대면적 고해상도의 LCD가 제작되어 왔다. 이에 따라 LCD 점등검사를 위한 Probe Unit의 기술 또한 급속도로 발전하고 있다. 고해상도에 따라 TFT LCD pad가 미세피치화 되어가고 있으며, panel의 검사를 위한 Probe 또한 30 um 이하의 초미세피치를 요구하고 있다. 따라서, 초미세 pitch의 LCD panel의 점등검사를 위한 Probe Unit의 개발이 시급하가. 본 연구에서는 30 um 이하의 미세피치의 Probe block을 위한 Slit wafer의 식각 공정 조건을 연구하였다. Si 공정에서 식각율과 식각깊이에 따른 profile angle의 목표를 설정하고, 식각조건에 따라 이 두 값의 변화를 관측하였다. 식각실험으로 Si DRIE 장비를 이용하여, chamber 압력, cycle time, gas flow, Oxygen의 조건에 따라 각각의 단면 및 표면을 SEM 관측을 통해 최적의 식각 조건을 찾고자 하였다. 식각율은 5um/min 이상, profile angle은 $90{\pm}1^{\circ}$의 값을 목표로 하였다. 이 때 최적의 식각조건은 Etching : SF6 400 sccm, 10.4 sec, passivation : C4F8 400 sccm, 4 sec의 조건이었으며, 식각공정의 Coil power는 2,600 W이었다. 이러한 조건의 공정으로 6 inch Si wafer에 공정한 결과 균일한 식각율 및 profile angle 값을 보였으며, oxygen gas를 미량 유입함으로써 식각율이 균일해짐을 알 수 있었다. 결론적으로 최적의 Slit wafer 식각 조건을 확립함으로써 Probe Unit을 위한 Pin 삽입공정 또한 수율 향상이 기대된다.

• 한국세라믹학회지
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• 제42권4호
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• pp.232-236
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• 2005

$LiNbO_{3}$ optical waveguide 구조를 neutral loop discharge plasma 방법으로 식각시 As과 $C\_{3}F_{8}$가 혼합된 가스 유량에 따른 식각속도와 표면조도 값의 특성을 관찰하였다. 식각 후 식각속도와 식각단면은 scanning electron microscopy로 비교 분석하였으며, 표면조도는 atomic force microscopy로 측정하였다. Ar과 $C_{3}F_{8}$가 혼합된 가스 유량비를 각각 0.1-0.5로 증가시킴에 따라 식각속도와 표면조도는 0.2에서 가장 높게 나타났으며, bias power를 증가함에 따라 300W에서 가장 우수한 식각속도와 가장 평탄한 표면 형상을 얻을 수 있었다.

• 대한치과보철학회지
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• 제30권4호
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• pp.508-525
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• 1992

The purpose of this study was to evaluate the effect of some resistance form designs on the bond strength of resin-retained prosthesis. Six sub-groups are designed in natural teeth group and resin teeth group . The framework designs in natural teeth group: 1) no groove preparation 2) groove at the center of distal surface 3) groove at the distobuccal line angle 4) 45 degree lateral load with no groove 5) 45 degree lateral load with center groove 6) splint two teeth with no groove. The framework designs in resin teeth group: 1) no groove preparation 2) groove at the center of distal surface 3) groove at the distobuccal line angle 4) metal covered the 1/2 of distal surface 5) metal covered the 1/2 of mesial surface 6) metal extended over the 114 of buccal surface. Specimens were treated electrolytic etching by Oxy-Etch and cemented with Panavia EX. Failure load was measured by Instron. Another 30 specimens were carried out fatigue tests by MTS 810 fatigue testing machine for 5000 cycles at different load level. The following results were obtained from this study. 1. The failure load was significantly increased by resistance forms. 2. The failure load was not increased by increase of total surface area bonded with teeth. The distal surface area played an important role in failure load. 3. In 45 degree lateral load group, the failure load was decreased significantly than that of in vertical load group. 4. Bond failure modes between static test and fatigue test exhibited no differences.