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Removal of Aspect-Ratio-Dependent Etching by Low-Angle Forward Reflected Neutral-Beam Etching  

Min Kyung-Seok (Department of Advanced Materials Science & Engineering, Sungkyunkwan University)
Park Byoung-Jae (Department of Advanced Materials Science & Engineering, Sungkyunkwan University)
Yeom Geun-Young (Department of Advanced Materials Science & Engineering, Sungkyunkwan University)
Kim Sung-Jin (Department of Electrical Engineering, Pohang University Science & Technology)
Lee Jae-Koo (Department of Electrical Engineering, Pohang University Science & Technology)
Publication Information
Journal of the Korean Vacuum Society / v.15, no.4, 2006 , pp. 387-394 More about this Journal
Abstract
In this study, the effect of using a neutral beam formed by low-angle forward reflection of a reactive ion beam on aspect-ratio-dependent etching (ARDE) has been investigated. When a SF6 Inductively Coupled Plasma and $SF_6$ ion beam etching are used to etch poly-Si, ARDE is observed and the etching of poly-Si on $SiO_2$ shows a higher ARDE effect than the etching of poly-Si on Si. However, by using neutral beam etching with neutral beam directionality higher than 70 %, ARDE during poly-Si etching by $SF_6$ can be effectively removed, regardless of the sample conditions. The mechanism for the removal of ARDE via a directional neutral beam has been demonstrated through a computer simulation of different nanoscale features by using the two-dimensional XOOPIC code and the TRIM code.
Keywords
Neutral beam etching; ARDE; RIE-lag; Low-angle surface reflection;
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