• 제목/요약/키워드: Engineering Center

검색결과 30,002건 처리시간 0.068초

Novolak 계열과 Epoxy 계열의 고분자를 이용한 새로운 multi layer 패턴 형성 방법 (Novel fabricated multi layer pattering using novolak and epoxy resin polymer.)

  • 김한형;양승국;유한석;이승용;오범환;이승걸;이일항;박세근
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2006년도 하계종합학술대회
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    • pp.549-550
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    • 2006
  • It has become topic continuously at MEMS or semiconductor process to form three-dimensional multilayer structure. In this paper, we devised the new polymer pattern method that has multilayer structure. This is method that uses different kind of polymeric material. Specially, polymers used in this study that we propose became all pattern by photolithography, prevented that process increases. Here, polymer that we use used polymer of epoxy order called "SU-8" and polymer of novolak resin called "AZ-1518". The result, "SU-8" was formed pattern to 3.5um thickness, and "AZ-1518" about pattern 3um thickness. Also, It was been 6um thickness at same pattern area.

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3차원 구조 소자에서의 doping profile에 따른 전류 특성 분석 (Analysis of Current Characteristics Determined by Doping Profiles in 3-Dimensional Devices)

  • 조성재;윤장근;박일한;이정훈;김두현;이길성;이종덕;박병국
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2006년도 하계종합학술대회
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    • pp.475-476
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    • 2006
  • Recently, the demand for high density MOSFET arrays are increasing. In implementing 3-D devices to this end, it is inevitable to ion-implant vertically in order to avoid screening effects caused by high silicon fins. In this study, the dependency of drain current characteristics on doping profiles is investigated by 3-D numerical analysis. The position of concentration peak (PCP) and the doping gradient are varied to look into the effects on primary current characteristics. Through these analyses, criteria of ion-implantation for 3-D devices are established.

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Transition Mechanism from Brittle Fracture to Ductile Shear when Machining Brittle Materials with an Abrasive Waterjet

  • Huang, Chuanzhen;Zhu, Hongtao;Lu, Xinyu;Li, Quanlai;Che, Cuilian
    • International Journal of Precision Engineering and Manufacturing
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    • 제9권2호
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    • pp.11-17
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    • 2008
  • Critical erosion kinetic energy models for radial/median cracks and lateral cracks in a workpiece are established in this study. We used experimental results to demonstrate that the fracture erosion resistance and erosion machining number could be used to evaluate the brittle fracture resistance and machinability of a workpiece. Erosion kinetic energy models were developed to predict brittle fracture and ductile shear, and a critical erosion kinetic energy model was developed to predict the transition from brittle fracture to ductile shear. These models were verified experimentally.

The Effect of Extracellular Glutamate Release on Repetitive Transient Ischemic Injury in Global Ischemia Model

  • Lee, Gi-Ja;Choi, Seok-Keun;Eo, Yun-Hye;Kang, Sung-Wook;Choi, Sam-Jin;Park, Jeong-Hoon;Lim, Ji-Eun;Hong, Kyung-Won;Jin, Hyun-Seok;Oh, Berm-Seok;Park, Hun-Kuk
    • The Korean Journal of Physiology and Pharmacology
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    • 제13권1호
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    • pp.23-26
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    • 2009
  • During operations, neurosurgeons usually perform multiple temporary occlusions of parental artery, possibly resulting in the neuronal damage. It is generally thought that neuronal damage by cerebral ischemia is associated with extracellular concentrations of the excitatory amino acids. In this study, we measured the dynamics of extracellular glutamate release in 11 vessel occlusion(VO) model to compare between single occlusion and repeated transient occlusions within short interval. Changes in cerebral blood flow were monitored by laser-Doppler flowmetry simultaneously with cortical glutamate level measured by amperometric biosensor. From real time monitoring of glutamate release in 11 VO model, the change of extracellular glutamate level in repeated transient occlusion group was smaller than that of single occlusion group, and the onset time of glutamate release in the second ischemic episode of repeated occlusion group was delayed compared to the first ischemic episode which was similar to that of single 10 min ischemic episode. These results suggested that repeated transient occlusion induces less glutamate release from neuronal cell than single occlusion, and the delayed onset time of glutamate release is attributed to endogeneous protective mechanism of ischemic tolerance.

PVDF 필름 위에 제작된 고전도도 Ag 나노와이어 투명전극 특성 연구 (Characterization of Ag Nanowire Transparent Electrode Fabricated on PVDF Film)

  • 라용호;박혜림;안소연;김진호;전대우;김선욱;이미재;황종희;임태영;이영진
    • 센서학회지
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    • 제28권6호
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    • pp.366-370
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    • 2019
  • In this study, we have successfully fabricated a highly conductive transparent electrode using Ag nanowires, based on piezoelectric polyvinylidene difluoride (PVDF) film, that can be applied as transparent and flexible speakers. The structural morphology of the Ag nanowires was confirmed by a detailed scanning electron microscopy. Ultraviolet-visible spectroscopy demonstrated that the transparent electrode fabricated by the Ag nanowires exhibited a transmittance of above 70%. The transparent electrode also showed very low sheet resistance with high flexibility. We have further developed an anti-oxidation coating layer by using a tetraethyl orthosilicate-poly trimethyloxyphenylsilane (TEOS-PTMS) slurry technique. It was confirmed that the transmittance and sheet resistance of the antioxidant film depends critically on the humidity of the film surface. We believe such Ag nanowire electrodes are a very promising next-generation transparent electrode technology that can be used in future flexible and transparent devices.

A High Voltage NMOSFET Fabricated by using a Standard CMOS Logic Process as a Pixel-driving Transistor for the OLED on the Silicon Substrate

  • Lee, Cheon-An;Jin, Sung-Hun;Kwon, Hyuck-In;Cho, Il-Whan;Kong, Ji-Hye;Lee, Chang-Ju;Lee, Myung-Won;Kyung, Jae-Woo;Lee, Jong-Duk;Park, Byung-Gook
    • Journal of Information Display
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    • 제5권1호
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    • pp.28-33
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    • 2004
  • A high voltage NMOSFET is proposed to drive top emission organic light emitting device (OLED) used in the organic electroluminescent (EL) display on the single crystal silicon substrate. The high voltage NMOSFET can be fabricated by utilizing a simple layout technique with a standard CMOS logic process. It is clearly shown that the maximum supply voltage ($V_{DD}$) required for the pixel-driving transistor could reach 45 V through analytic and experimental methods. The high voltage NMOSFET was fabricated by using a standard 1.5 ${\mu}m$, 5 V CMOS logic process. From the measurements, we confirmed that the high voltage NMOSFET could sustain the excellent saturation characteristic up to 50 V without breakdown phenomena.