• 제목/요약/키워드: Energy band structure

검색결과 531건 처리시간 0.026초

탄화규소(4H) 기판의 초고내압용 접합 장벽 쇼트키 다이오드의 특성 모델링 (Characteristics Modeling of Junction Barrier Schottky Diodes for ultra high breakdown voltage with 4H-SiC substrate)

  • 송재열;방욱;강인호;이용재
    • 한국정보통신학회:학술대회논문집
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    • 한국해양정보통신학회 2007년도 추계종합학술대회
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    • pp.200-203
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    • 2007
  • 넓은 에너지 갭의 물질인 탄화규소(4H)기판을 사용하여, 초고내압을 위한 접합장벽 쇼트키 구조의 소자를 설계하여 제작하였다. 측정결과로써 소자의 역방향 I-V 특성은 1000V 이상의 항복전압을 보였고 p-grid의 설계 최적 길이는 $3{\mu}m$ 간격이였다. 이 연구에서는 제작한 소자의 공정 조건 파라미터들을 사용하여 I-V 특성을 모델링 하였고 I-V 특성 파라미터들을 추출하여 실제 소자 파라미터와 비교, 분석하였다.

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Properties of Photoluminescience for AgInS2/GaAs Epilayer Grown by Hot Wall Epitaxy

  • Lee, Sang-Youl;Hong, Kwang-Joon
    • Transactions on Electrical and Electronic Materials
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    • 제5권2호
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    • pp.50-54
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    • 2004
  • The AgInS$_2$epilayers with chalcopyrite structure grown by using a hot-wall epitaxy (HWE) method have been confirmed to be a high quality crystal. From the optical absorption measurement, the temperature dependence of the energy band gap on the AgInS$_2$/GaAs was derived as the Varshni's relation of E$\_$g/(T) = 2.1365 eV - (9.89${\times}$10$\^$-3/ eV/K) T$^2$/(2930+T eV). After the as-grown AgInS$_2$/GaAs was annealed in Ag-, S-. and In-atmosphere, the origin of point defects of the AgInS$_2$/GaAs has been investigated by using the photoluminescence (PL) at 10 K. The native defects of $V_{Ag}$, $V_s$, $Ag_{int}$, and $S_{int}$ obtained from PL measurement were classified to donors or accepters type. And, we concluded that the heat-treatment in the S- atmosphere converted the AgInS$_2$/GaAs to optical p-type. Also, we confirmed that the In in the AgInS$_2$/GaAs did not form the native defects because the In in AgInS$_2$did exist as the form of stable bonds.

Strong Correlation Effect by the Rare Earth Substitution on Thermoelectric Material Bi2Te3 ; in GGA+U Approach

  • Quang, Tran Van;Kim, Miyoung
    • 한국자기학회:학술대회 개요집
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    • 한국자기학회 2013년도 임시총회 및 하계학술연구발표회
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    • pp.19-20
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    • 2013
  • Thermoelectic properties of the typical thermoelectric host materials, the tellurides and selenides, are known to be noticeably changed by their volume change due to the strain [1]. In the bismuth telluride ($Bi_2Te_3$) crystal, a substitution of rare-earth element by replacing one of the Bi atoms may cause the change of the lattice parameters while remaining the rhombohedral structure of the host material. Using the first-principles approach by the precise full potential linearized augmented plane wave (FLAPW) method [2], we investigated the Ce substitution effect on the thermoelectric transport coefficients for the bismuth telluride, employing Boltzmann's equation in a constant relaxation-time approach fed with the FLAPW wave-functions within the rigid band approximation. Depending on the real process of re-arrangement of atoms in the cell to reach the equilibrium state, $CeBiTe_3$ was found to manifest a metal or a narrow bandgap semiconductor. This feature along with the strong correlation effect originated by the 4f states of Ce affect significantly on the thermoelectric properties. We showed that the position of the strongly localized f-states in energy scale (Fig. 1, f-states are shaded) was found to alter critically the transport properties in this material suggesting an opportunity to improve the thermoelectric efficiency by tuning the external strain which may changing the location of the f-sates.

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PLD 법에 의한 c-사파이어 기판위의 MnS 박막성장 (Growth of MnS Thin Film on c-Sapphire by Pulsed Laser Deposition)

  • 송정환
    • 한국재료학회지
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    • 제17권9호
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    • pp.475-479
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    • 2007
  • Pulsed laser deposition was utilized to grow MnS thin films on c-sapphire substrate using a KrF excimer laser at growth temperatures that ranged from room temperature to $700^{\circ}C$. The results of X-ray diffraction (XRD) and UV-visible spectroscopy were employed to investigate the structural and optical properties of the MnS films. While the growth rate decreased as $T_s$ increased, the overall quality of the film improved. The highest quality MnS film was obtained at $700^{\circ}C$. Variations in the $T_s$ resulted in the MnS films exhibiting different growth mechanisms. The oriented (200) rocksalt MnS film was grown at room temperature. In the case of higher $T_s,\;200{\sim}500^{\circ}C$, the films consisted of mixed phases of rocksalt and wurtzite. The main structure of the films was altered to (111) rocksalt when the temperature was increased to in excess of $600^{\circ}C$. This behavior may very well be the result of elements such as surface energy and atomic arrangement during the growth process. The optical band gap of the obtained ${\alpha}-MnS$ film was estimated to be 3.32 eV.

초음파 분무 열분해법을 이용한 구리산화물 박막 성장 (Growth of Copper Oxide Thin Films Deposited by Ultrasonic-Assisted Spray Pyrolysis Deposition Method)

  • 한인섭;박일규
    • 한국재료학회지
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    • 제28권9호
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    • pp.516-521
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    • 2018
  • Copper oxide thin films are deposited using an ultrasonic-assisted spray pyrolysis deposition (SPD) system. To investigate the effect of substrate temperature and incorporation of a chelating agent on the growth of copper oxide thin films, the structural and optical properites of the copper oxide thin films are analyzed by X-ray diffraction (XRD), field-emssion scanning electron microscopy (FE-SEM), and UV-Vis spectrophotometry. At a temperature of less than $350^{\circ}C$, three-dimensional structures consisting of cube-shaped $Cu_2O$ are formed, while spherical small particles of the CuO phase are formed at a temperature higher than $400^{\circ}C$ due to a Volmer-Weber growth mode on the silicon substrate. As a chelating agent was added to the source solutions, two-dimensional $Cu_2O$ thin films are preferentially deposited at a temperature less than $300^{\circ}C$, and the CuO thin film is formed even at a temperature less than $350^{\circ}C$. Therefore the structure and crystalline phase of the copper oxide is shown to be controllable.

Si1-xMnxTe1.5 단결정의 구조적, 광학적, 자기적 특성에 관한 연구 (Structural, Optical, and Magnetic Properties of Si1-xMnxTe1.5 Single Crystals)

  • 황영훈;엄영호;조성래
    • 한국자기학회지
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    • 제16권3호
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    • pp.178-181
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    • 2006
  • 본 연구에선는 수직 Bridgman 법으로 묽은 자성 반도체 $Si_{1-x}Mn_xTe_{1.5} $ 단결정을 성장시켜 Mn의 조성비 변화에 따른 광학적, 전지적, 그리고 자기적 특성을 조사하였다. X-선 회절 실험으로부터 육방정계(hexagonal) 구조임을 확인하였다. 광흡수 측정으로부터 에너지 띠 간격은 조성비 x와 온도 증가에 대하여 감소함을 보였다. 성장시킨 시료의 경우 강자성 특성을 나타내었으며, Curie 온도는 80K 이상이었다. Mn의 조성비가 증가함에 따라 평균 자기 모멘트와 보자력 값은 증가하였다.

선급용 고장력강 FSW접합부의 미세조직 및 기계적 성질 (Microstructures and Mechanical Properties of Friction Stir Welded High Strength Steels far Shipbuilding)

  • 장웅성;최기용
    • Journal of Welding and Joining
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    • 제20권3호
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    • pp.67-73
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    • 2002
  • In an attempt to evaluate the feasibility of friction stir welding(FSW) for joining carbon steels, microstructures and mechanical properties of friction stir welded carbon steels with different grain structures were investigated. In comparison of O-type stir zone(SZ) appeared in various aluminium alloys, configuration of SZ in friction stir welded carbon steels displayed U-type. Plastically deformed pearlite band structure was identified to surround the SZ, indicating the existence of so-called thermo-mechanically affected zone(TMAZ). However, the TMAZ of carbon steels was much narrower than that of Al alloys. The microstructures of both stir zone and TMAZ revealed bainite matrix in a conventional carbon steel for shipbuilding, while, in the same region, ferrite matrix microstructures were formed in a low carbon fine grained steel. The conventional carbon steel showed superior stirring workability to that of the fine grained carbon steel. The yield and tensile strength of the friction stir welded joints were comparable to those of the base metals, and the elongation in welded joints demonstrated excellent ductility. Absorbed energy in SZ of the fine grained carbon steel was ten times higher than that obtained from conventional submerged arc weld metal of the same steel. Based on these results, the application FSW to carbon steels was found to be feasible.

Characteristics of Surface Modified Activated Carbons Prepared by Potassium Salt Sequentially After Hydrochloric Acid Treatment

  • Oh, Won-Chun;Park, Chong-Sung;Bae, Jang-Soon;Ko, Young-Shin
    • Carbon letters
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    • 제7권1호
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    • pp.34-41
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    • 2006
  • The objective of this paper is to compare the variation of surface properties by hydrochloric acid pre-treatment and of metallic potassium and their salts loading effect for activated carbon after surfaces transformation by acid. From the results of nitrogen adsorption, each isotherm shows a distinct knee band, which is closely related to the characteristic of microporous carbons with capillary condensation in micropores. In order to present the causes of the differences in surface properties and $S_{BET}$ after the samples were treated with hydrochloric acid, pore structure and surface morphology are investigated by adsorption analysis. X-ray diffraction (XRD) patterns indicate that activated carbons show better performance for metallic potassium and potassium salts by pre-treatment with hydrochloric acid. Scanning electron microscopy (SEM) pictures of potassium/activated carbon particles provide information about the homogeneous distribution of metal or metal complex on the surface. For the chemical composition microanalysis for potassium treatment of the activated carbon pre-treated with hydrochloric acid, samples were analyzed by energy disperse X-ray (EDX). Finally, the type and quality of oxygen groups are determined from the method proposed by Boehm. A positive influence of the acidic groups on the carbon surface by acid treatment is also demonstrated by an increase in the contents of potassium salts with increasing of acidic groups calculated from Boehm titration.

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무금속 프탈로시아닌(metal free phthalocyanine: H2Pc) 층이 삽입된 OLED의 전기적 특성 분석 (Electrical characterization of OLED using metal free phthalocyanine (H2Pc) layer)

  • 안태준;이종호;최범호;유윤섭
    • 한국정보통신학회:학술대회논문집
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    • 한국정보통신학회 2018년도 추계학술대회
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    • pp.195-196
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    • 2018
  • 본 연구에서는 $H_2Pc$ 층이 삽입된 OLED의 전기적 특성 및 발광 특성을 분석하고, 이를 TCAD program을 이용한 전산 모사를 통해 확인하였다. $H_2Pc$ 층은 tunnel barier로서 동작함을 실험 결과로부터 얻을 수 있었고, 전산 모사에서 에너지밴드가 가해진 전기장에 따라 레조넌트 터널링이 가능한 구조임을 확인하였다.

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Effect of annealing atmosphere on the properties of chemically deposited Ag2S thin films

  • Pawar, S.M.;Shin, S.W.;Lokhande, C.D.;Kim, J.H.
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2009년도 춘계학술발표대회
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    • pp.34.2-34.2
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    • 2009
  • The silver sulphide (Ag2S) thin films have been chemically deposited from an alkaline medium (pH 8 to 10) by using a silver nitrate and thiourea as a Ag and S ion precursor sources. Ethylene Damine tetraacetic acid (EDTA) was used as a complexing agent. The effect of annealing atmosphere such as Ar, N2+H2S and O2 on the structural, morphological and optical properties of Ag2S thin films has been studied. The annealed films were characterized by using X-ray diffraction (XRD), scanning electron microscopy (SEM) and optical absorption techniques for the structural, morphological, and optical properties, respectively. XRD studies reveal that the as-deposited thin films are polycrystalline with monoclinic crystal structure, is converted in to silver oxide after air annealing. The surface morphology study shows that grains are uniformly distributed over the entire surface of the substrate. Optical absorption study shows the as-deposited Ag2S thin films with band gap energy of 0.92eV and after air annealing it is found to be 2.25 eV corresponding to silver oxide thin films.

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