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http://dx.doi.org/10.4283/JKMS.2006.16.3.178

Structural, Optical, and Magnetic Properties of Si1-xMnxTe1.5 Single Crystals  

Hwang, Young-Hun (Department of Physics, University of Ulsan)
Um, Young-Ho (Department of Physics, University of Ulsan)
Cho, Sung-Lae (Department of Physics, University of Ulsan)
Abstract
We have investigated the Mn concentration-dependent structural, optical, magnetic properties in IV-VI diluted magnetic semiconductor $Si_{1-x}Mn_xTe_{1.5} $ crystals prepared by the vertical Bridgman technique. X-ray studies showed the single crystalline hexagonal crystal structure. From the optical absorption measurements energy band gap were found to decreases with increasing x and temperature. From the magnetization measurements the samples had ferromagnetic ordering with Curie temperature $T_C$ about 80 K. With increasing Mn concentration, the average magnetic moments per Mn atom determined from the saturated magnetization increased.
Keywords
diluted magnetic semiconductor; vertical bridgman method; SiMnTe;
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1 T. Stroy, R. R. Galazka, R. B. Frankel, and P. A. Wolff, Phys. Rev. Lett., 56, 777 (1986)   DOI   ScienceOn
2 Y. Fukuma, H. Asada, M. Arifuku, and T. Koyanagi, Appl. Phys. Lett., 80, 1013 (2002)   DOI   ScienceOn
3 R. Rimet, C. Schlenker, and Vincent, Journal of Magnetism and Magnetic Materials, 25, 7 (1981)   DOI   ScienceOn
4 D. L. Dreifus, R. M. Kolbas, R. L. Harper, J. R. Tassitino, S. Hwang, and J. F. Schetzina, Appl. Phys. Lett., 53, 1279 (1988)   DOI
5 R. N. Bicknell, N. C. Giles-Taylor, J. F. Schetzina, N. G. Anderson, and W. D. Laidig, J. Vac. Sci. Technol., A4, 2126 (1986)
6 R. Fiederling, M. Keim, G. Reuscher, W. Ossau, G. Schmidt, A. Waag, and L. W. Molenkamp, Nature (London), 402, 787 (1999)   DOI   ScienceOn
7 Y. Ohno, D. K. Young, B. Beschoten, F. Matsukura, H. Ohno, and D. D. Awschalom, Nature (London), 402, 790 (1999)   DOI   ScienceOn
8 S. Koshihara, A. Oiwa, M. Hirasawa, S. Katsumoto, Y. Iye, C. Urano, H. Takagi, and H. Munekata, Phys.Rev. Lett., 78, 4617 (1997)   DOI   ScienceOn
9 H. J. Schmitt, H. Dammann, and J. Instn, Electronics & Telecom. Engrs., 34, 286 (1988)
10 Y. H. Hwang, H. K. Kim, S. Cho, Y. H. Um, and H. Y. Park, J. Crystal Growth, 249, 391 (2003)   DOI   ScienceOn
11 J. F. Moulder, W. F. Stickle, P. E. Sobol, and K. D. Bomben, Handbook of X-Ray Photoelectron and Spectroscopy (Perkin- Elmer, Eden Prairie, MN, 1992)
12 Y. Fukuma, H. Asada, J. Miyashita, N. Nishimura, and T. Koyanagi, J. Appl. Phys., 93, 7667 (2003)   DOI   ScienceOn
13 H. Ohno, Science, 281, 951 (1998)   DOI   ScienceOn
14 K. Ueda, H. Tabata, and T. Kawai, Appl. Phys. Lett., 79, 988 (2001)   DOI   ScienceOn
15 Y. Matsumoto, M. Murakami, T. Shono, T. Hasegawa, T. Fukumura, M. Kawasaki, P. Ahmet, T. Chikyow, S. Koshihara, and H. Koinuma, Science, 291, 854 (2001)   DOI   ScienceOn
16 M. Katsuda, K. Hosoe, M. Nakaseko, and Sumitomo, Electric Technical Review 30, 84-7 (1990)