• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2007.10a
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• pp.200-203
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• 2007

Devices of junction barrier schottky(JBS) structure using 4H-SiC substrates with wide energy band gaps was designed and fabricated. As a measurement results, the device of reverse I-V characteristics was shown as more than 1000 V, its design optimum length of p-grid was $3{\mu}m$ space. In this paper, I-V characteristics was modeled by using of device fabricated process conditions parameters and it was extracted that the I-V property parameters, and it was compared and analyzed with between device parameters and model parameters.

• Transactions on Electrical and Electronic Materials
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• v.5 no.2
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• pp.50-54
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• 2004

The AgInS$_2$epilayers with chalcopyrite structure grown by using a hot-wall epitaxy (HWE) method have been confirmed to be a high quality crystal. From the optical absorption measurement, the temperature dependence of the energy band gap on the AgInS$_2$/GaAs was derived as the Varshni's relation of E$\_$g/(T) = 2.1365 eV - (9.89${\times}$10$\^$－3/ eV/K) T$^2$/(2930＋T eV). After the as-grown AgInS$_2$/GaAs was annealed in Ag－, S－. and In-atmosphere, the origin of point defects of the AgInS$_2$/GaAs has been investigated by using the photoluminescence (PL) at 10 K. The native defects of $V_{Ag}$, $V_s$, $Ag_{int}$, and $S_{int}$ obtained from PL measurement were classified to donors or accepters type. And, we concluded that the heat-treatment in the S- atmosphere converted the AgInS$_2$/GaAs to optical p-type. Also, we confirmed that the In in the AgInS$_2$/GaAs did not form the native defects because the In in AgInS$_2$did exist as the form of stable bonds.

• Proceedings of the Korean Magnestics Society Conference
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• 2013.05a
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• pp.19-20
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• 2013

Thermoelectic properties of the typical thermoelectric host materials, the tellurides and selenides, are known to be noticeably changed by their volume change due to the strain [1]. In the bismuth telluride ($Bi_2Te_3$) crystal, a substitution of rare-earth element by replacing one of the Bi atoms may cause the change of the lattice parameters while remaining the rhombohedral structure of the host material. Using the first-principles approach by the precise full potential linearized augmented plane wave (FLAPW) method [2], we investigated the Ce substitution effect on the thermoelectric transport coefficients for the bismuth telluride, employing Boltzmann's equation in a constant relaxation-time approach fed with the FLAPW wave-functions within the rigid band approximation. Depending on the real process of re-arrangement of atoms in the cell to reach the equilibrium state, $CeBiTe_3$ was found to manifest a metal or a narrow bandgap semiconductor. This feature along with the strong correlation effect originated by the 4f states of Ce affect significantly on the thermoelectric properties. We showed that the position of the strongly localized f-states in energy scale (Fig. 1, f-states are shaded) was found to alter critically the transport properties in this material suggesting an opportunity to improve the thermoelectric efficiency by tuning the external strain which may changing the location of the f-sates.

• Korean Journal of Materials Research
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• v.17 no.9
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• pp.475-479
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• 2007

Pulsed laser deposition was utilized to grow MnS thin films on c-sapphire substrate using a KrF excimer laser at growth temperatures that ranged from room temperature to $700^{\circ}C$. The results of X-ray diffraction (XRD) and UV-visible spectroscopy were employed to investigate the structural and optical properties of the MnS films. While the growth rate decreased as $T_s$ increased, the overall quality of the film improved. The highest quality MnS film was obtained at $700^{\circ}C$. Variations in the $T_s$ resulted in the MnS films exhibiting different growth mechanisms. The oriented (200) rocksalt MnS film was grown at room temperature. In the case of higher $T_s,\;200{\sim}500^{\circ}C$, the films consisted of mixed phases of rocksalt and wurtzite. The main structure of the films was altered to (111) rocksalt when the temperature was increased to in excess of $600^{\circ}C$. This behavior may very well be the result of elements such as surface energy and atomic arrangement during the growth process. The optical band gap of the obtained ${\alpha}-MnS$ film was estimated to be 3.32 eV.

• Korean Journal of Materials Research
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• v.28 no.9
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• pp.516-521
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• 2018

Copper oxide thin films are deposited using an ultrasonic-assisted spray pyrolysis deposition (SPD) system. To investigate the effect of substrate temperature and incorporation of a chelating agent on the growth of copper oxide thin films, the structural and optical properites of the copper oxide thin films are analyzed by X-ray diffraction (XRD), field-emssion scanning electron microscopy (FE-SEM), and UV-Vis spectrophotometry. At a temperature of less than $350^{\circ}C$, three-dimensional structures consisting of cube-shaped $Cu_2O$ are formed, while spherical small particles of the CuO phase are formed at a temperature higher than $400^{\circ}C$ due to a Volmer-Weber growth mode on the silicon substrate. As a chelating agent was added to the source solutions, two-dimensional $Cu_2O$ thin films are preferentially deposited at a temperature less than $300^{\circ}C$, and the CuO thin film is formed even at a temperature less than $350^{\circ}C$. Therefore the structure and crystalline phase of the copper oxide is shown to be controllable.

• Journal of the Korean Magnetics Society
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• v.16 no.3
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• pp.178-181
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• 2006

We have investigated the Mn concentration-dependent structural, optical, magnetic properties in IV-VI diluted magnetic semiconductor $Si_{1-x}Mn_xTe_{1.5} $ crystals prepared by the vertical Bridgman technique. X-ray studies showed the single crystalline hexagonal crystal structure. From the optical absorption measurements energy band gap were found to decreases with increasing x and temperature. From the magnetization measurements the samples had ferromagnetic ordering with Curie temperature $T_C$ about 80 K. With increasing Mn concentration, the average magnetic moments per Mn atom determined from the saturated magnetization increased.

• Journal of Welding and Joining
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• v.20 no.3
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• pp.67-73
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• 2002

In an attempt to evaluate the feasibility of friction stir welding(FSW) for joining carbon steels, microstructures and mechanical properties of friction stir welded carbon steels with different grain structures were investigated. In comparison of O-type stir zone(SZ) appeared in various aluminium alloys, configuration of SZ in friction stir welded carbon steels displayed U-type. Plastically deformed pearlite band structure was identified to surround the SZ, indicating the existence of so-called thermo-mechanically affected zone(TMAZ). However, the TMAZ of carbon steels was much narrower than that of Al alloys. The microstructures of both stir zone and TMAZ revealed bainite matrix in a conventional carbon steel for shipbuilding, while, in the same region, ferrite matrix microstructures were formed in a low carbon fine grained steel. The conventional carbon steel showed superior stirring workability to that of the fine grained carbon steel. The yield and tensile strength of the friction stir welded joints were comparable to those of the base metals, and the elongation in welded joints demonstrated excellent ductility. Absorbed energy in SZ of the fine grained carbon steel was ten times higher than that obtained from conventional submerged arc weld metal of the same steel. Based on these results, the application FSW to carbon steels was found to be feasible.

• Carbon letters
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• v.7 no.1
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• pp.34-41
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• 2006

The objective of this paper is to compare the variation of surface properties by hydrochloric acid pre-treatment and of metallic potassium and their salts loading effect for activated carbon after surfaces transformation by acid. From the results of nitrogen adsorption, each isotherm shows a distinct knee band, which is closely related to the characteristic of microporous carbons with capillary condensation in micropores. In order to present the causes of the differences in surface properties and $S_{BET}$ after the samples were treated with hydrochloric acid, pore structure and surface morphology are investigated by adsorption analysis. X-ray diffraction (XRD) patterns indicate that activated carbons show better performance for metallic potassium and potassium salts by pre-treatment with hydrochloric acid. Scanning electron microscopy (SEM) pictures of potassium/activated carbon particles provide information about the homogeneous distribution of metal or metal complex on the surface. For the chemical composition microanalysis for potassium treatment of the activated carbon pre-treated with hydrochloric acid, samples were analyzed by energy disperse X-ray (EDX). Finally, the type and quality of oxygen groups are determined from the method proposed by Boehm. A positive influence of the acidic groups on the carbon surface by acid treatment is also demonstrated by an increase in the contents of potassium salts with increasing of acidic groups calculated from Boehm titration.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2018.10a
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• pp.195-196
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• 2018

We have investigated electrical and optical characteristics of $H_2Pc$ introduced OLED devices. $H_2Pc$ layer acted on tunnel barrier for incident electrons. we have also observed that energy band of the proposed structure was varied as applied electric field by simulation using TCAD program.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.34.2-34.2
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• 2009

The silver sulphide (Ag2S) thin films have been chemically deposited from an alkaline medium (pH 8 to 10) by using a silver nitrate and thiourea as a Ag and S ion precursor sources. Ethylene Damine tetraacetic acid (EDTA) was used as a complexing agent. The effect of annealing atmosphere such as Ar, N2+H2S and O2 on the structural, morphological and optical properties of Ag2S thin films has been studied. The annealed films were characterized by using X-ray diffraction (XRD), scanning electron microscopy (SEM) and optical absorption techniques for the structural, morphological, and optical properties, respectively. XRD studies reveal that the as-deposited thin films are polycrystalline with monoclinic crystal structure, is converted in to silver oxide after air annealing. The surface morphology study shows that grains are uniformly distributed over the entire surface of the substrate. Optical absorption study shows the as-deposited Ag2S thin films with band gap energy of 0.92eV and after air annealing it is found to be 2.25 eV corresponding to silver oxide thin films.