• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.3
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• pp.96-101
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• 2001

In this study, diluted magnetic $Zn_{1-x}Mn_{x}Te$ epilayers were grown on GaAs(100) substrates by hot-wall epitaxy, and their characteristics were systematically examined. The maximum Mn composition of the $Zn_{1-x}Mn_{x}Te$ epilayers was 0.97. The crystallographic orientation was toward <100> and the structure of the $Zn_{1-x}Mn_{x}Te$ epilayers was the zincblende structure, identical to those of the GaAs substrate. With increasing the substrate temperature (350~$400^{\circ}C$), Mn composition increased (0.02~0.23) and he quality of the epilayer became worse. The lattice constants increased linearly with increasing Mn composition, but the band gap energy increased nonlinearly with increasing x.

• Journal of the Korean Chemical Society
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• v.56 no.4
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• pp.484-490
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• 2012

The tin (IV) oxide nanoparticles are prepared by controlled precipitation method and calcined at temperatures of $200-600^{\circ}C$. The prepared $SnO_2$ nanoparticles characterized by XRD patterns, TEM image, IR and UV-Vis spectra. The XRD patterns and TEM image show the tetragonal structure and spherical morphology for $SnO_2$ nanoparticles, respectively. The photocatalytic activity of the prepared $SnO_2$ nanoparticles studied in degradation reaction of methylene blue (MB). The results show the size of nanoparticles, band-gap energy and photocatalytic activity of $SnO_2$ depends on the calcinations temperature. The $SnO_2$ nanoparticles calcined at $500^{\circ}C$ indicated the highest photoreactivity. Also, the zero-valent tin (ZVT) nanoparticles with tetragonal structure are prepared by a reducing agent and used as a catalyst in degradation of MB. In basic pH of 11, the degradation >95% of MB at time 150 min obtained at presence of ZVT nanoparticles.

• 한국연소학회:학술대회논문집
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• 2006.04a
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• pp.19-25
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• 2006

Energy efficient and low pollution combustion systems the use gaseous fuels have been in great demand in recent year. Radiant burner in many different forms are emerging as very desirable combustion systems for same reason. Porous radiant burners are used in drying, preheating and curing, and in other type of materials processing and manufacturing processes. However, little knowledge is available about the operating characteristics and the structure of flames in porous ceramic fiber radiant burners. The objective of the present work is to investigate the global performance characteristics of the ceramic fiber burner. A detailed study which includes the spectral intensity, gas temperature, radiation efficiency and global pollutant emissions. Another objective is to study the flame structure of the ceramic fiber burner by measuring the local gas temperature. The results indicate that ceramic fiber burner do offer a 19-44% gain in radiant efficiency. The ceramic fiber burner exhibit significant spectral intensity peaks in the band at $2.0-2.5{\mu}m$. The local temperature distribution inside the mat and near the mat surface as a function of the equivalence ratio can be reasonably interpreted by the relation of the heat balance in the mat and movement of the reaction zone. Nox emission from ceramic fiber burner is less than 25ppm throughout the operating range.

• Journal of the Korean institute of surface engineering
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• v.48 no.6
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• pp.292-296
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• 2015

Indium tin zinc oxide (ITZO) thin films were deposited on glass and quartz substrates by RF magnetron sputtering. The substrate temperature varied from $100^{\circ}C$ to $400^{\circ}C$. The structural and optical properties of thin films were investigated by X-ray diffraction (XRD), Field Emission Scanning electron microscopy (FESEM) and UV-Visible transmission spectra. It has been found from X-ray diffraction patterns that increasing the substrate temperature, the amorphous structure changes into polycrystalline structure. The FESEM results showed that all ITZO thin films have a smooth surface. The average optical transmittance (400 - 800 nm) was 82% and 80% at all films deposited at $200^{\circ}C$. The band gap energy ranges 3.41 to 3.57eV and 2.81 to 3.44eV with a maximum value at $200^{\circ}C$ all substrates temperature.

• Bulletin of the Korean Chemical Society
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• v.32 no.10
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• pp.3660-3665
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• 2011

CO-tolerant PtMo/C alloy electrocatalyst was prepared by a colloidal method, and its electrocatalytic activity toward CO oxidation was investigated. Electrochemical study revealed that the alloy catalyst significantly enhanced catalytic activity toward the electro-oxidation of CO compared to Pt/C counterpart. Cyclic voltammetry suggested that Mo plays an important role in promoting CO electro-oxidation by facilitating the formation of active oxygen species. The effect of Mo on the electronic structure of Pt was investigated using X-ray absorption spectroscopy to elucidate the synergetic effect of alloying. Our in-depth spectroscopic analysis revealed that CO is less strongly adsorbed on PtMo/C catalyst than on Pt/C catalyst due to the modulation of the electronic structure of Pt d-band. Our investigation shows that the enhanced CO electrooxidation in PtMo alloy electrocatalyst is originated from two factors; one comes from the facile formation of active oxygen species, and the other from the weak interaction between Pt and CO.

• Advances in Energy Research
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• v.3 no.2
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• pp.117-124
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• 2015

In this paper, we have reported an enhancement in thermoelectric properties of un-doped zinc oxide (ZnO) grown by molecular beam epitaxy (MBE) on silicon (001) substrate by annealing treatment. The grown ZnO thin films were annealed in oxygen environment at $500^{\circ}C-800^{\circ}C$, keeping a step of $100^{\circ}C$ for one hour. Room temperature Seekbeck measurements showed that Seebeck coefficient and power factor increased from 222 to $510{\mu}V/K$ and $8.8{\times}10^{-6}$ to $2.6{\times}10^{-4}Wm^{-1}K^{-2}$ as annealing temperature increased from 500 to $800^{\circ}C$ respectively. This observation was related with the improvement of crystal structure of grown films with annealing temperature. X-ray diffraction (XRD) results demonstrated that full width half maximum (FWHM) of ZnO (002) plane decreased and crystalline size increased as the annealing temperature increased. Photoluminescence study revealed that the intensity of band edge emission increased and defect emission decreased as annealing temperature increased because the density of oxygen vacancy related donor defects decreased with annealing temperature. This argument was further justified by the Hall measurements which showed a decreasing trend of carrier concentration with annealing temperature.

• Advances in nano research
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• v.7 no.1
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• pp.13-24
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• 2019

Well-crystalline $SnO_2$ nanoparticles of 4-5 nm size with different In contents were synthesized by hydrothermal process at relatively low temperature and characterized by transmission electron microscopy (TEM), microRaman spectroscopy and photoluminescence (PL) spectroscopy. Indium incorporation in $SnO_2$ lattice is seen to cause a lattice expansion, increasing the average size of the nanoparticles. The fundamental phonon vibration modes of $SnO_2$ lattice suffer a broadening, and surface modes associated to particle size shift gradually with the increase of In content. Incorporation of In drastically enhances the PL emission of $SnO_2$ nanoparticles associated to deep electronic defect levels. Although In incorporation reduces the band gap energy of $SnO_2$ crystallites only marginally, it affects drastically their dye degradation behaviors under UV illumination. While the UV degradation of methylene blue (MB) by undoped $SnO_2$ nanoparticles occurs through the production of intermediate byproducts such as azure A, azure B, and azure C, direct mineralization of MB takes place for In-doped $SnO_2$ nanoparticles.

• Smart Structures and Systems
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• v.31 no.5
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• pp.455-467
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• 2023

Impact damper is a passive damping system that controls undesirable vibration with mass block impacting with stops fixed to the excited structure, introducing momentum exchange and energy dissipation. However, harmful momentum exchange may occur in the random excitation increasing structural response. Based on the mechanism of impact damping system, a semi-active impact damper (SAID) with controllable impact timing as well as a semi-active control strategy is proposed to enhance the seismic performance of engineering structures in this paper. Comparative experimental studies were conducted to investigate the damping performances of the passive impact damper and SAID. The extreme working conditions for SAID were also discussed and approaches to enhance the damping effect under high-intensity excitations were proposed. A numerical simulation model of SAID attached to a frame structure was established to further explore the damping mechanism. The experimental and numerical results show that the SAID has better control effect than the traditional passive impact damper and can effectively broaden the damping frequency band. The parametric studies illustrate the mass ratio and impact damping ratio of SAID can significantly influence the vibration control effect by affecting the impact force.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.283-283
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• 2011

The n-doping effect by doping metal carbonate into an electron-injecting organic layer can improve the device performance by the balanced carrier injection because an electron ohmic contact between cathode and an electron-transporting layer, for example, a high current density, a high efficiency, a high luminance, and a low power consumption. In the study, first, we investigated an electron-ohmic property of electron-only device, which has a ITO/$Rb_2CO_3$-doped $C_{60}$/Al structure. Second, we examined the I-V-L characteristics of all-ohmic OLEDs, which are glass/ITO/$MoO_x$-doped NPB (25%, 5 nm)/NPB (63 nm)/$Alq_3$ (32 nm)/$Rb_2CO_3$-doped $C_{60}$(y%, 10 nm)/Al. The $MoO_x$doped NPB and $Rb_2CO_3$-doped fullerene layer were used as the hole-ohmic contact and electron-ohmic contact layer in all-ohmic OLEDs, respectively, Third, the electronic structure of the $Rb_2CO_3$-doped $C_{60}$-doped interfaces were investigated by analyzing photoemission properties, such as x-ray photoemission spectroscopy (XPS), Ultraviolet Photoemission spectroscopy (UPS), and Near-edge x-ray absorption fine structure (NEXAFS) spectroscopy, as a doping concentration at the interfaces of $Rb_2CO_3$-doped fullerene are changed. Finally, the correlation between the device performance in all ohmic devices and the interfacial property of the $Rb_2CO_3$-doped $C_{60}$ thin film was discussed with an energy band diagram.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.10
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• pp.2509-2515
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• 2014

In this paper, the conventional vertical structure for VLSI circuits CMOS intend to improve the stress effects of active region and built-in threshold voltage. For these improvement, the proposed structure is shallow trench isolation of moat shape. We want to analysis the electron concentration distribution, gate bias vs energy band, thermal stress and dielectric enhanced field of thermal damage between vertical structure and proposed moat shape. Physically based models are the ambient and stress bias conditions of TCAD tool. As an analysis results, shallow trench structure were intended to be electric functions of passive as device dimensions shrink, the electrical characteristics influence of proposed STI structures on the transistor applications become stronger the potential difference electric field and saturation threshold voltage, are decreased the stress effects of active region. The fabricated device of based on analysis results data were the almost same characteristics of simulation results data.