• 한국신재생에너지학회:학술대회논문집
• /
• 2011.05a
• /
• pp.122.1-122.1
• /
• 2011

Phosphorus is known to pile-up at the silicon surface when it is thermally oxidized. A thin layer, about 40nm thick from the silicon surface, is created containing more phosphorus than the bulk of the emitter. This layer has a gaussian profile with the peak at the surface of the silicon. In this study the pile-up effect was studied if this layer can act as a front surface field for solar cells. The effect was also tested if its high dose of phosphorus at the silicon surface can lower the contact resistance with the front metal contact. P-type wafers were first doped with phosphorus to create an n-type emitter. The doping was done using either a furnace or ion implantation. The wafers were then oxidized using dry thermal oxidation. The effect of the pile-up as a front surface field was checked by measuring the minority carrier lifetime using a QSSPC. The contact resistance of the wafers were also measured to see if the pile-up effect can lower the series resistance.

• Journal of Biosystems Engineering
• /
• v.20 no.4
• /
• pp.390-396
• /
• 1995

This study was conducted to develop a computer simulation program for trickle application of nutrient solution. A computer simulation program using finite element method was developed to evaluate discharges of emitters on trickle application. The uniformity of application for two different lateral line lengths and three application methods was evaluated by the computer simulation program. The results of this study are as follows. 1. A computer simulation program was developed to determine emitter discharges from a trickle application system and pressures at emitter positions by finite element method and to design a uniform trickle application system. 2. The simulation program developed was verified by experiment. The root mean square error between experimental data and simulated data was 1.1% on the average discharge and it was found that the computer simulation program was an effective tool for the design of a trickle application system of nutrient solution. 3. The uniformity of trickle application system was evaluated for three different methods of supplying nutrient solution with different lateral line lengths. The best uniformity was obtained from the method, which supplies nutrient solution from both ends alternatively for the same period of time.

• Current Photovoltaic Research
• /
• v.4 no.2
• /
• pp.31-41
• /
• 2016

n-type PERT (passivated emitter, rear totally diffused) bifacial solar cells with boron and phosphorus diffusion as p+ emitter and n+ BSF (back surface field) have attracted significant research interest recently. In this work, the influences of wafer thickness, bulk lifetime, emitter, BSF on the photovoltaic characteristics of solar cells are discussed. The performance of the solar cell is determined by using one-dimensional solar cell simulation software PC1D. The simulation results show that the key role of the BSF is to decrease the surface doping concentration reducing the recombination and thus, increasing the cell efficiency. A lightly phosphorus doped BSF (LD BSF) was experimentally optimized to get low surface dopant concentration for n type bifacial solar cells. Pre-oxidation combined with a multi-plateau drive-in, using limited source diffusion was carried out before pre-deposition. It could reduce the surface dopant concentration with minimal impact on the sheet resistance.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.17 no.3
• /
• pp.259-266
• /
• 2004

In this paper. a new two types of EST(Emitter Switched Thyristor) structures are proposed to improve the electrical characteristics including the current saturation capability. Besides, the two dimensional numerical simulations were carried out using MEDICI to verify the validity of the device and examine the electrical characteristics. First, a vortical trench electrode EST device is proposed to improve snap-back effect and its blocking voltage. Second, a dual trench gate EST device is proposed to obtain high voltage current saturation characteristics and high blocking voltage and to eliminate snap-back effect. The two proposed devices have superior electrical characteristics when compared to conventional devices. In the vertical trench electrode EST, the snap-back effect is considerably improved by using the vertical trench gate and cathode electrode and the blocking voltage is one times better than that of the conventional EST. And in the dual trench gate EST, the snap-back effect is completely removed by using the series turn-on and turn-off MOSFET and the blocking voltage is one times better than that of the conventional EST. Especially current saturation capability is three times better than that of the other EST.

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.33A no.12
• /
• pp.39-46
• /
• 1996

In AlGaAs/GaAs HBT the temperature dependence of DC parameters was investigated over the temperature range between 95K and 580K. The temperature dependence of DC parameters depends on the relative contribution of each of the current components suc as emitter-injection-current, base-injection-current, bulk recombination current, interface recombination curretn, thermal generation ecurrent and avalanche current due to impact ionization within the collector space charge layer in a specific temperature. In this paper we investigated the temperature effects on DC parameters such as V$_{BE,ON}$ current gain, input and output characteristics, V$_{CE, OFF}$, R$_{E}$, R$_{C}$ and analyzed the origins, and extracted the qualitativ econditions for a stable HBTs against the temperature variation. Finally, in order to keep HBTs stable with respect to the variation of temperature, the valance-band-energy-discontinuity at emitter-base heterojunction should be large enough to enhance the effect of carrier suppression at a relatively high temperature. In addition the recombination centers, especially around collector junction, should be removed and the area of emitter and collector junction should be identical as well.

• Journal of Information Display
• /
• v.1 no.1
• /
• pp.63-69
• /
• 2000

In order to improve both the level and the stability of electron emission, Mo and Co silicides were formed from Mo mono-layer and Ti/Co bi-layers on single crystal silicon field emitter arrays (FEAs), respectively. Using the slope of Fowler-Nordheim curve and tip radius measured from scanning electron microscopy (SEM), the effective work function of Mo and Co silicide FEAs were calculated to be 3.13 eV and 2.56 eV, respectively. Compared with silicon field emitters, Mo and Co silicide exhibited 10 and 34 times higher maximum emission current, 10 V and 46 V higher device failure voltage, and 6.1 and 4.8 times lower current fluctuation, respectively. Moreover, the emission currents of the silicide FEAs depending on vacuum level were almost the same in the range of $10^{-9}{\sim}10^{-6}$ torr. This result shows that silicide is robust in terms of anode current degradation due to the absorption of air molecules.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.05a
• /
• pp.90-93
• /
• 2004

In this work, we have used different techniques for the surface passivation: conventional thermal oxidation (CTO), rapid thermal oxidation (RTO), and plasma-enhanced chemical vapour deposition (PECVD). The surface passivation qualities of eight different single and combined double layer have been investigated both on the phosphorus non-diffused p-type FZ silicon and on phosphorus diffused emitter of 100 ${\Omega}/Sq$ and 40 ${\Omega}/Sq$. In the single layer, silicon dioxide $(SiO_2)$ passivates good on the emitter while silicon nitride (SiN) passivates better than on the non-diffused surface. In the double layers, CTO/SiN1 passivates very well both on non-diffused surface on the emitter. However, RTO/SiN1 and RTO/SiN2 stacks are more suitable for surface passivation in solar cells caused by a relatively good passivation qualities and the low optical reflection. Applying these stacks in solar cells we achieved 18.5 % and 18.8 % on 0.5 ${\Omega}$ cm FZ-Si with planar and textured front surface, respectively. The excellent open circuit voltage $(V_{oc})$ of 675.6 mV is obtained the planar cell with RTO/SiN stack.

• Journal of Sensor Science and Technology
• /
• v.25 no.3
• /
• pp.229-234
• /
• 2016

Self-powered neutron detector (SPND) is being widely used to monitor the reactor core of the nuclear power plants. The SPND contains a neutron-sensitive metallic emitter surrounded by a ceramic insulator. Currently, the vanadium (V) SPND has been being developed to be used in OPR1000 nuclear power plants. Some Monte Carlo simulations were accomplished to calculate the initial sensitivity of vanadium emitter material and alumina insulator with a cylindrical geometry. An MCNP code was used to simulate some factors (neutron self-shielding factor and beta escape probability from the emitter) and space charge effect of an insulator necessary to calculate the sensitivity of vanadium detector. The simulation results were compared with some theoretical and experimental values. The method presented here can be used to analyze the optimum design of the vanadium SPND and contribute to the development of TMI (Top-mount In-core Instrumentation) which might be used in the SMART and SMR.

• Journal of the Institute of Electronics Engineers of Korea SC
• /
• v.43 no.4 s.310
• /
• pp.45-52
• /
• 2006

In his paper, we have developed the SMD(surface mounted device) type PECL(positive emitter-coupled logic) VCXO of the $5{\times}7mm$ size for gratifying the requested specifications and the multilayer ceramic SMD(surface mounted device) package technology. The VCXO wired with the PECL(positive emitter coupled logic) package take place a stray inductance and a parasitic capacitance by the length and the inner pattern of the VCXO and the amplitude attenuation and signal loss due to the reflection of power source and the noise component. We have developed the Zig system to analyze the precise spectrum and evaluate the performance. The basic operating voltage is the 3.3 V and have the frequency range of 120MHz-180MHz. The Q factor is over 5K and it has the low jitter characteristics of 3.5 ps and low phase noise.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2002.08a
• /
• pp.309-312
• /
• 2002

Triode field emitters with planar-carbon-nanopaticle (CNP) cathodes were successfully fabricated using the conventional photolithography and the hotfilament chemical vapor deposition. Electron emission from a CNP triode emitter with a 12-${\mu}m$-diameter gate hole started at the gate voltage of 45 V, and the anode current reached the level of ${\sim}120$ nA at the gate voltage of 60 V, respectively. For the quantitative analysis of the Fowler-Nordheim (F-N) type emission from a CNP triode emitter, we carried out 2dimensional numerical calculation of electrostatic potential using the finite element method. As it turned out, a radial variation of electric field was very important to account for the emission from a planar emitting layer. By assuming the graphitic work function of 5 eV for CNPs, we were able to extract a consistent set of F-N parameters, together with the radial position of emitting sites.