전자공학회논문지A (Journal of the Korean Institute of Telematics and Electronics A)
- 제33A권12호
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- Pages.39-46
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- 1996
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- 1016-135X(pISSN)
AlGaAs/GaAs HBT의 DC 파라미터에 미치는 온도영향의 해석
Analysis of temperature effects on DC parameters of AlGaAs/GaAs HBT
초록
In AlGaAs/GaAs HBT the temperature dependence of DC parameters was investigated over the temperature range between 95K and 580K. The temperature dependence of DC parameters depends on the relative contribution of each of the current components suc as emitter-injection-current, base-injection-current, bulk recombination current, interface recombination curretn, thermal generation ecurrent and avalanche current due to impact ionization within the collector space charge layer in a specific temperature. In this paper we investigated the temperature effects on DC parameters such as V
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