• Journal of the Korean Chemical Society
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• v.44 no.6
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• pp.526-532
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• 2000

Cation exchange separation and inductively coupled plasma atomic emission spectrometric(ICP-AES) determination of ruthenium in HCl solutions were studied to quantitatively determine ruthenium in spent nuclear fuels. Ruthenium-bearing samples were dissolved with the mixed acid solution(9 : 1 mole ratio, HCl-HNO$_3$) using an acid digestion bomb. Based on the absorption spectra and ion exchange behaviour of ruthenium in hydrochloric acid media, its possible chemical species were discussed. On a cation exchange column (0.7 ${\times}$ 8.0 cm) packed with AG 50W ${\times}$ 8(100~200 mesh) and equilibrated with 0.5 M HCl, ruthenium was eluated with 0.5 M HCl while uranium was retained on the column. The established separation method was applied to a simulated spent nuclear fuel and resulted in the recovery of 98.5% with a relative standard deviation of 0.7%.

• Bulletin of the Korean Chemical Society
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• v.35 no.4
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• pp.1169-1176
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• 2014

In this study, water-dispersible ZnS:Mn nanocrystals were synthesized by capping the surface with conventional and simple structured amino acid ligands: $\small{L}$-Glycine and $\small{L}$-Alanine. The ZnS:Mn-Gly and ZnS:Mn-Ala nanocrystal powders were characterized by XRD, HR-TEM, EDXS, ICP-AES, and FT-IR spectroscopy. The optical properties were measured by UV-Visible and photoluminescence (PL) spectroscopy. The PL spectra for the ZnS:Mn-Gly and ZnS:Mn-Ala showed broad emission peaks at 599 nm and 607 nm with PL efficiencies of 6.5% and 7.8%, respectively. The measured average particle size from the HR-TEM images were $6.4{\pm}0.8$ nm (ZnS:Mn-Gly) and $4.1{\pm}0.5$ nm (ZnS:Mn-Ala), which were also supported by Debye-Scherrer calculations. In addition, the degree of aggregation of the nanocrystals in aqueous solutions were measured by a hydrodynamic light scattering method, which showed formation of sub-micrometer size aggregates for both ZnS:Mn-Gly ($273{\pm}94$ nm) and ZnS:Mn-Ala ($233{\pm}34$ nm) in water due to the intermolecular attraction between the capping amino acids molecules. Finally, the cytotoxic effects of ZnS:Mn-Gly and ZnS:Mn-Ala nanocrsystals over the growth of wild type E. coli were investigated. As a result, no toxicity was shown for the ZnS:Mn-Gly nanocrystal in the colloidal concentration region from 1 ${\mu}g/mL$ to 1000 ${\mu}g/mL$, while ZnS:Mn-Ala showed significant toxicity at 100 ${\mu}g/mL$.

• Korean Journal of Materials Research
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• v.13 no.8
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• pp.497-502
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• 2003

Crystallographic characteristics and interfacial structures of $Al_2$$O_3$and $ZrO_2$dielectric films prepared by atomic layer chemical vapor deposition (ALCVD) were investigated at atomic scale by high-resolution transmission electron microscopy (HRTEM) and energy dispersive X-ray spectroscopy (EDS)/electron energy-loss spectroscopy (EELS) coupled with a field-emission transmission electron microscope. The results obtained from cross-sectional and plan-view specimens showed that the $Al_2$$O_3$film was crystallized by annealing at a high temperature and its crystal system might be evaluated as either cubic or tetragonal phase. Whereas the $ZrO_2$film crystallized during deposition at a low temperature of ∼$300^{\circ}C$ was composed of both tetragonal and monoclinic phase. The interfacial thickness in both films was increased with the increased annealing temperature. Further, the interfacial structures of X$ZrO_2$$O_3$and $ZrO_2$films were discussed through analyses of EDS elemental maps and EELS spectra obtained from the annealed films, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.10
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• pp.839-843
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• 2011

ZnO nanostructures were developed on a Si (100) substrate from powder mixture of ZnO and 5 mol% Pd (ZP-5) as reactants by ${\times}$ sccm oxygen pressures(x= 0, 10, 20, 40). DTA (differential thermal analysis) result shows the Pd(5 mol%)+ZnO mixtured powder(PZ-5) is easily evaporated than pure ZnO powder. The PZ-5 mixtured powder was characterized by DTA to determine the thermal decomposition which was found to be at $800^{\circ}C$, $1,100^{\circ}C$. Weight loss(%) and ICP (inductively coupled plasma) analysis reveal that Zn vaporization is decreased by increased oxygen pressures from the PZ-5 at $1,100^{\circ}C$ for 30 mins. Needle-like ZnO nanostructures array developed from 10 sccm oxygen pressure, was well aligned vertically on the Si substrate at $1,100^{\circ}C$ for 30 mins. The lengths of the Needle-like ZnO nanostructures is about 2 ${\mu}m$ with diameters of about 65 nm. The developed ZnO nanostructures exhibited growth direction along [001] with defect-free high crystallinity. It is considered that Zn vaporization is responsible for the growth of Needle-like ZnO nanostructures by controlling the oxygen pressures. The photoluminescence spectra of ZnO nanostructures exhibited stronger 376.7 nm NBE (near band-edge emission) peak and 529.3 nm DLE (deep level energy) peak.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.29 no.3
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• pp.83-90
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• 2019

In this paper, Mg-doped AlN epilayers for power semiconductor devices are grown by mixed-source hydride vapor phase epitaxy. Magnesium is used as p-type dopant material in the grown AlN epilayer. The AlN epilayers on the GaN-templated sapphire substrate and GaN-templated-patterned sapphire substrate (PSS), respectively, as the base substrates for device application, were selectively grown. The surface and the crystal structures of the AlN epilayers were investigated by field emission scanning electron microscopy (FE-SEM) and high-resolution-X-ray diffraction (HR-XRD). From the X-ray photoelectron spectroscopy (XPS) and Raman spectra results, the p-type AlN epilayers grown by using the mixed-source HVPE method could be applied to power devices.

• Journal of Sensor Science and Technology
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• v.11 no.1
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• pp.9-17
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• 2002

The forming conditions of X-ray storage phosrhors $BaFBr_{1-x}I_x:Eu^{2+}$, $Na^+$ have been investigated, and measured the PSL emission spectra and its intensity, fading characteristics and does dependence of the prepared phosphors. These characteristics were compared with those of commercial image plate (ST-III) obtained from Fuji Photo Film Co. The optimal preparing conditions of $BaFBr_{1-x}I_x:Eu^{2+}$, $Na^+$ Phosphor were 0.5 mol% of $EuF_3$, 4.0 mol% of NaF and composition ratio x=0.3, and the sintering temperature were $950^{\circ}C$ in $H_2$ atmosphere. When the composition ratio x was equal to 0, the spectral range of the luminescence of $BaFBr_{1-x}I_x:Eu^{2+}$, $Na^+$ phosphor was $365{\sim}420\;nm$, and its maximum luminescence intensity appeared at 390 nm. When composition ratio x was not equal to 0, the wavelength ranges and peak of the spectra were shifted to the longer wavelength with the growth of composition ratio x. A good linearity was shown between the PSL intensity and X-ray irradiation dose. The phosphor sample with x=0.3 exhibited better fading characteristics than that of other $BaFBr_{1-x}I_x:Eu^{2+}$ phosphor samples, and the fading characteristics of the PSL intensity at room temperature were shown poorer with increasing $I^-$ ion concentration. The lattice constant of the phosphor becomes larger with increasing the $I^-$ ion concentration.

• Journal of the Korean Vacuum Society
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• v.19 no.3
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• pp.211-216
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• 2010

The luminescence properties of $In_{0.5}Ga_{0.5}As/In_{0.5}Al_{0.5}As$ multiple quantum wells (MQWs) grown on $In_{0.5}Al_{0.5}As$ buffer layers have been studied by using photoluminescence (PL) and time-resolved PL measurements. A$1-{\mu}m$ thick $In_{0.5}Al_{0.5}As$ buffer layers were deposited on a 500 nm thick GaAs layer, followed by the deposition of the InGaAs/InAlAs MQWs. In order to investigate the effects of InAlAs buffer layer on the optical properties of the MQWs, four different temperature sequences are used for the growth of InAlAs buffer layer. The growth temperature for InAlAs buffer layer was varied from 320^{\circ}C to $580^{\circ}C$. The MQWs consist of three $In_{0.5}Ga_{0.5}$As wells with different well thicknesses (2.5 nm, 4.0 nm, and 6.0 nm thick) and 10 nm thick $In_{0.5}Al_{0.5}$As barriers. The PL spectra from the MQWs with InAlAs layer grown at lower temperature range ($320-580^{\circ}C$) showed strong peaks from 4 nm QW and 6 nm QW. However, for the MQWs with InAlAs buffer grown at higher temperature range ($320-480^{\circ}C$), the PL spectra only showed a strong peak from 6 nm QW. The strongest PL intensity was obtained from the MQWs with InAlAs layer grown at the fixed temperature of $480^{\circ}C$, while the MQWs with buffer layer grown at higher temperature from $530^{\circ}C$ to $580^{\circ}C$ showed the weakest PL intensity. From the emission wavelength dependence of PL decay times, the fast and slow decay times may be related to the recombination of carriers in the 4 nm QW and 6 nm QW, respectively. These results indicated that the growth temperatures of InAlAs layer affect the structural and optical properties of the MQWs.

• Journal of Sensor Science and Technology
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• v.10 no.1
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• pp.62-70
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• 2001

The ZnSe sample grown by chemical bath deposition (CBD) method were annealed in Ar gas at $45^{\circ}C$. Using extrapolation method of X-ray diffraction pattern, it was found to have zinc blend structure whose lattice parameter $a_o$ was $5.6687\;{\AA}$. From Hall effect, the mobility was likely to be decreased by impurity scattering at temperature range from 10 K to 150 K and by lattice scattering at temperature range from 150 K to 293 K. The band gap given by the transmission edge changed from $2.700{\underline{5}}\;eV$ at 293 K to $2.873{\underline{9}}\;eV$ at 10 K. Comparing photocurrent peak position with transmission edge, we could find that photocurrent peaks due to excition electrons from valence band, ${\Gamma}_8$ and ${\Gamma}_7$ and to conduction band ${\Gamma}_6$ were observed at photocurrent spectrum. From the photocurrent spectra by illumination of polarized light on the ZnSe thin film, we have found that values of spin orbit coupling splitting ${\Delta}so$ is $0.098{\underline{1}}\;eV$. From the PL spectra at 10K, the peaks corresponding to free bound excitons and D-A pair and a broad emission band due to SA is identified. The binding energy of the free excitons are determined to be $0.061{\underline{2}}\;eV$ and the dissipation energy of the donor -bound exciton and acceptor-bound exciton to be $0.017{\underline{2}}\;eV$, $0.031{\underline{0}}\;eV$, respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.6
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• pp.425-433
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• 2000

The stochiometric mix of evaporating materials for the $CuGaTe_2$single crystal thin films was prepared from horizontal furnance. Using extrapolation method of X-ray diffraction patterns for the $CuGaTe_2$polycrystal, it was found tetragonal structure whose lattice constant $a_0 and c_0$ were 6.025 $\AA$ and 11.931 $\AA$, respectively. To obtain the single crystal thin films, $CuGaTe_2$mixed crystal was deposited on throughly etched semi-insulator GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $670^{\circ}C$ and $410^{\circ}C$ respectively, and the thickness of the single crystal thin films is 2.1$\mu\textrm{m}$. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). Hall effect on this sample was measured by the method of van der Pauw and studied on carrier density and mobility dependence on temperature. The carrier density and mobility of $CuGaTe_2$single crystal thin films deduced from Hall data are $8.72{\times}10{23}$개 $\textrm m^3$, $3.42{\times}10^{-2}$ $\textrm m^2$/V.s at 293K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the $CuGaTe_2$single crystal thin film, we have found that the values of spin orbit coupling $\Delta$s.o and the crystal field splitting $\Delta$cr were 0.0791 eV and 0.2463 eV at 10 K, respectively. From the PL spectra at 10 K, the peaks corresponding to free bound excitons and D-A pair and a broad emission band due to SA is identified. The binding energy of the free excitons are determined to be 0.0470 eV and the dissipation energy of the donor-bound exciton and acceptor-bound exciton to be 0.0490 eV, 0.0558 eV, respectively.

• Economic and Environmental Geology
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• v.44 no.6
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• pp.463-474
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• 2011

The Haenam epithermal mineralized zone is located in the southwestern part of South Korea, and hosts low sulfidation epithermal Au-Ag deposit (Eunsan-Moisan) and clay quarries (Okmaesan, Seongsan, and Chunsan). Epithermal deposits and accompanying hydrothermal alteration related to Cretaceous volcanism caused large zoned assemblages of hydrothermal alteration minerals. Advanced argillic-altered rocks with mineral assemblages of alunite-quartz, alunite-dickite-quartz, and dickite-kaolinite-quartz exposed on the Okmaesan, Seongsan, and Chunsan area. Advanced Spaceborne Thermal Emission and Reflection Radiometer (ASTER), with three visible and near infrared bands, six shortwave infrared bands, and five thermal infrared bands, was used to identify advanced argillic-altered rocks within the Haenam epithermal mineralized zone. The distinct spectral features of hydrothermal minerals allow discrimination of advanced argillic-altered rocks from non-altered rocks within the study area. Because alunite, dickite, and kaolinite, consisting of advanced argillic-altered rocks within the study area are characterized by Al-O-H-bearing minerals, these acid hydrothermal minerals have a strong absorption feature at $2.20{\mu}m$. The band combination and band ratio transformation cause increasing differences of DN values between advanced argillic-altered rock and non-altered rock. The alunite and dickite-kaolinite of advanced argillic-altered rocks from the Okmaesan, Seongsan, and Chunsan have average DN values of 1.523 and 1.737, respectively. These values are much higher than those (1.211 and 1.308, respectively) of non-altered area. ASTER images can remotely provide the distribution of hydrothermal minerals on the surface. In this way good relation between ASTER spectra analysis and field data suggests that ASTER spectral analysis can be useful tool in the initial steps of mineral exploration.