• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.456-458
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• 2004

We proposed a novel triode-type carbon nanotube field emitter arrays in which extracted gate is surrounded by CNT emitters. We carried out 3-dimensional numerical calculations of electrostatic potential for the proposed CNT-FEAs using the finite element method and compared the results with those obtained from the structure of conventional CNT-FEAs. It was found that the proposed structure could reduce the turn-on voltage for electron emission and improve beam focusing.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.I
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• pp.71-74
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• 2005

There have been various efforts to achieve a better PDP TV, which have low power consumption, high image quality and low price. As the results, the power consumption of LG's new 42 inch HD PDP could be lower than 42 inch LCD under the general movie display load condition. And the address discharge time lag of ${\sim}1\;{\mu}s$ for 42 and 50 inch XGA single scan by which the cost can be reduced and image quality can be improved was achieved by using new MgO material and driving waveform. In addition, we have suggested TCA (Triangular Color pixel Arrangement) cell structure for realizing the full HDTV of 60inch diagonal size, which has $1920{\times}1080$ resolution. The luminous efficiency of the suggested TCA structure has been increased about 40% compared with that of the conventional cell structure.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2002년도 ITC-CSCC -3
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• pp.1378-1381
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• 2002

This paper describes a control network which has a new node structure in the LonWorks networks. The proposed node structure is applicable to flexible and more complex applications which are impossible in the conventional Lonworks node structure. We implemented a node in order to evaluate the proposed control networks and verified the commercial feasibility and compatibility by experimenting the implemented node in the conventional Lonworks control networks.

• 한국정밀공학회지
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• 제27권9호
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• pp.20-25
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• 2010

The effect of micro surface structure on printing for printed electronics has been studied experimentally. The photolithography MEMS fabricationwass used to make a SU-8 molder which has micro structures on the surface, and the PDMS micro structure was fabricated by the PDMS molding method. In the aspect of printed electronics, we used silver paste conductive ink. We measured the surface energy variation on pillar microstructure. The microstructure was used to real printing experiment by a screen printing. We printed 1cm micro lines which have $30{\sim}250{\mu}m$ width, and checked the conductivity to sort out opened line pattern. Printability was defined by success probability of printed patterns and we found that the present microstructures improve the printability significantly.

• Journal of Information Display
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• 제5권2호
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• pp.1-5
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• 2004

We developed an a-Si TFT-LCD panel with integrated gate driver circuit using a standard 5-MASK process. To minimize the effect of the a-Si TFT current and LC's capacitance variation with temperature, we developed a new a-Si TFT circuit structure and minimized coupling capacitance by changing vertical architecture above gate driver circuit. Integration of gate driver circuit on glass substrate enables single chip and 3-side free panel structure in a-Si TFT-LCD of QVGA ($240{\times}320$) resolution. And using double ASG structure the dead space of TFT-LCD panel could be further decreased.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 추계학술대회 논문집 전기물성,응용부문
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• pp.131-133
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• 2001

Dendrimers represent a new class of synthetic macromolecules characterized by a regularly branched treelike structure. Peculiar features of the dendritic geometry are the large number of end groups as well as the shape persistence in higher generations, approaching spherical geometry. And one of the most peculiar characteristics of dendritic macromolecules is their controlled molecular structure and orientation, which means that they have a practical application in achieving a highly organized molecular arrangement. We attempted to fabricate a G4-48PyA dendrimer LB films containing 48 pyridinealdoxime functional end group that could form a complex structure with metal ions. Also, we investigated the surface activity of dendrimer films at air-water interface. And we have studied the electrical properties of the ultra-thin dendrimer LB films. The electrical properties of the ultra-thin dendrimer LB films were investigated by studying the current-voltage characteristics of metal/dendrimer LB films/metal (MIM) structure. And rectifying behavior of the devices was occurred in applied field.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.1103-1106
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• 2006

We have presented a comprehensive study on threshold voltage $(V_{th})$ control of organic thin-film transistors (OTFTs) with dual-gate structure. The fabrication of dual-gate pentacene OTFTs using plasma-enhanced atomic layer deposited (PEALD) 150 nm thick $Al_2O_3$ as a bottom gate dielectric and 300 nm thick parylene or PEALD 200 nm thick $Al_2O_3$ as both a top gate dielectric and a passivation layer is reported. The $V_{th}$ of OTFT with 300 nm thick parylene as a top gate dielectric is changed from 4.7 V to 1.3 V and that with PEALD 200 nm thick $Al_2O_3$ as a top gate dielectric is changed from 1.95 V to -9.8 V when the voltage bias of top gate electrode is changed from -10 V to 10 V. The change of $V_{th}$ of OTFT with dual-gate structure has been successfully understood by an analysis of electrostatic potential.

• Journal of Information Display
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• 제7권3호
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• pp.27-30
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• 2006

This paper presents a comprehensive study on threshold voltage $(V_{th})$ control of organic thin-film transistors (OTFTs) with dual-gate structure. The fabrication of dual-gate pentacene OTFTs using plasma-enhanced atomic layer deposited (PEALD) 150 nm thick $Al_{2}O_{3}$ as a bottom gate dielectric and 300 nm thick parylene or PEALD 200 nm thick $Al_{2}O_{3}$ as both a top gate dielectric and a passivation layer was investigated. The $V_{th}$ of OTFT with 300 nm thick parylene as a top gate dielectric was changed from 4.7 V to 1.3 V and that with PEALD 200 nm thick $Al_{2}O_{3}$ as a top gate dielectric was changed from 1.95 V to -9.8 V when the voltage bias of top gate electrode was changed from -10 V to 10 V. The change of $V_{th}$ of OTFT with dual-gate structure was successfully investigated by an analysis of electrostatic potential.

• 반도체디스플레이기술학회지
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• 제8권2호
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• pp.59-62
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• 2009

In order to check the validation of LC simulation, 0.7 inch LCOS panel in full-HD resolution was fabricated and used for the electro-optical measurement. Compared the measured data with the calculated data, the averaged difference was 1.72% under 0 ~ +6 V bias on pixel electrode. To improve the optical characteristics of full-HD LCOS panel, the planar structure and trench structures (0.1 um, 0.2 um and 0.3 um-in-depth) between adjacent pixels were investigated with LC simulation. The planar structure showed the higher reflectance and faster reflectance-voltage response time than the trench structure. The optical fill factor and contrast ratio of planar structure were also higher than those of trench structures. As compared 1 um-in-depth trench structure resembled to the real structure with the planar structure, the optical fill factor was improved by 1.15% and the contrast ratio was improved by 5.26%. In order to minimize the loss of luminance and contrast ratio, the planar structure need to be applied between adjacent pixels.

• 전력전자학회논문지
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• 제24권4호
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• pp.237-243
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• 2019

A high-efficiency and small-sized switched-mode line transformer (SMLT) is proposed in this study. The conventional structure of an adapter is composed of line transformer and rectifiers. This structure has a limit in miniaturizing due to low-frequency line transformer. Another structure is composed of power factor correction (PFC) and DC/DC converter. This structure has a limit in reducing volume due to two-stage structure. As the proposed SMLT is composed of an LLC resonant converter, a high-frequency transformer can be adopted to achieve isolation standards and size reduction. This proposed structure has different operation modes in accordance with line input voltage to overcome poor line regulation. In addition, the proposed SMLT is applied to the front of a conventional PFC converter, because the SMLT output voltage is restored to rectified sinusoidal wave by using a full-bridge rectifier in the secondary side. The design of the PFC converter is easy, because the SMLT output voltage is controlled as rectified sinusoidal wave. The validity of the proposed converter is proven through a 350 W prototype.