• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05b
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• pp.94-97
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• 2002

Phase transitions of the $Sm_{2}(MoO_{4})_{3}$ single crystal were studied through thermal analysis, x-ray methods and SEM/EDS. $Sm_{2}(MoO_{4})_{3}$ undergoes the ferroelastic and ferroelectric phase transition at $198^{\circ}C$. With increasing temperature, the second phase transition occurs at $928^{\circ}C$. From TG analysis, the mass loss of $Sm_{2}(MoO_{4})_{3}$ exhibits an anomalous behavior at about $650^{\circ}C$ and the curves increased monotonically to $1132^{\circ}C$. SEM and EDS show that the escape of ${MoO_{4}^{2-}$ tetrahedra from the lattice of $Sm_{2}(MoO_{4})_{3}$ increase above $928^{\circ}C$, so $Sm_{2}(MoO_{4})_{3}$ has a very rough surface and internal cracks.

• The Journal of the Korea institute of electronic communication sciences
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• v.7 no.5
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• pp.983-989
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• 2012

IEEE 802.3az LPI mechanism allows an Ethernet link to reduce power consumption by entering a low-power sleeping mode and letting some components being powered off when there is no data to be transmitted through the link. However, if small amount of packets are being sent periodically, such a mechanism can not obtain energy efficiency due to a high overhead caused by excessive mode transitions. In this paper, we propose an enhanced LPI mechanism which can perform state transition adaptively based on the traffic characteristics on transport layer and network status. This simulation result shows that proposed mechanism improves energy efficiency than LPI mechanism with respect to energy consumption rate for various traffic loads.

• Electrical & Electronic Materials
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• v.8 no.3
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• pp.291-297
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• 1995

The InP crystals have been grown by modified synthesis solute diffusion (SSD) method and its properties have been investigated. The crystals have been grown by lowering the crucible quartz for growth in the furnace and crystal growth rate is 1.8mm/day. The lattice constant a. of the grown crystals is 5.867.angs.. Etch pits density along growth direction of crystal changes from 3.0*10.sup 3/cm$\^$-2/ of first freeze part to 6.7*10$\^$4/cm$\^$-2/ of last freeze part and the radial direction of wafer shows nearly uniform distribution. The resistivity and the carrier concentration of the grown crystals are 1.43*10$\^$-1/.ohm.-cm, 7.7*10$\^$15/cm$\^$-3/ at room temperature, respectively. In the photolurninescence at 10K, the radiation transitions are observed by the near band edge recombination, a pair recombination due to Si donor - Zn acceptor and its phonon replica in the InP. The activation energy by Zn diffusion in undoped n-InP crystals is 1.22eV.

• Current Optics and Photonics
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• v.1 no.4
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• pp.402-411
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• 2017

Combined LIBS-Raman spectroscopy has been widely studied, due to its complementary capabilities as an elemental analyzer that can acquire signals of atoms, ions, and molecules. In this study, the classification of polymorphs was performed by laser-induced breakdown spectroscopy (LIBS) to overcome the limitation in molecular analysis; the results were verified by Raman spectroscopy. LIBS signals of the $CaCO_3$ polymorphs calcite and aragonite, and $CaSO_4{\cdot}2H_2O$ (gypsum) and $CaSO_4$ (anhydrite), were acquired using a Nd:YAG laser (532 nm, 6 ns). While the molecular study was performed using Raman spectroscopy, LIBS could also provide sufficient key data for classifying samples containing different molecular densities and structures, using the peculiar signal ratio of $5s{\rightarrow}4p$ for the orbital transition of two polymorphs that contain Ca. The basic principle was analyzed by electronic motion in plasma and electronic transition in atoms or ions. The key factors for the classification of polymorphs were the different electron quantities in the unit-cell volume of each sample, and the selection rule in electric-dipole transitions. The present work has extended the capabilities of LIBS in molecular analysis, as well as in atomic and ionic analysis.

• Journal of the Korean Chemical Society
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• v.46 no.2
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• pp.99-116
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• 2002

The thiazolylazo compounds and their Co(II), Ni(II) and Cu(II) complexes of barbituric acid, uracil, thiouracil, citrazinic acid, chromotropic acid, gallic acid, pyrogallol and salicylic acid were pre-pared and characterized by $^1H$ NMR , IR and the effect of pH on the electronic absorption spectra . The mode of ionization, the electronic transitions and the dissociation constants were discussed. The stoichiometries of the complexes were of 1:1, 2:1 and 3:2 (M:L). The copper complexes are of isotropic ESR spectra (except that of gallic acid which showed a complicated one) and are of magnetically diluted behaviour with orbital con-tribution. Detailed DTA data were obtained and discussed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.10
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• pp.876-882
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• 2000

ZnS phosphors were sintered at vacuum atmosphere, Sintered under the temperature of 950$\^{C}$, ZnS phosphors were grown into the sphalerite structure and two emission peaks were observed at the positions of 460nm and 528nm of the emission spectra. Sintered over the temperature of 1050$\^{C}$, there were simultaneously the sphalerite and wurtize structure in the ZnS phosphors and three emission peaks were observed at the positions of 440nm and 515nm of emission spectra. The emission peaks of 460nm obsrved under the sphalerite structure and 440nm observed under the wurtize structure were due to the vacancy of Zn formed in the ZnS phosphors. The emission peaks of 528nm observed under the sphalerite structure and 515nm observed under the wurtize structure wre caused by the radiative transitions from the level of the vacancy of S formed in the ZnS phosphors to the valance band.

• Journal of the Korean Chemical Society
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• v.57 no.6
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• pp.712-720
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• 2013

Microwave assisted syntheses of Zn(II), Cd(II) and Hg(II) complexes with 3-aminopyridine (3AP) and nitrite ($NO_2{^-}$) ions have been reported. The metal complexes were characterized by elemental analyses, molar conductance, IR, Far-IR, electronic, NMR ($^1H$, $^{13}C$), thermal and electron impact mass spectral studies. The spectroscopic studies reveal the composition, the nature of nitrite ligand in the complexes, electronic transitions, chemical environments of C and H atoms thermal degradation of the complexes. On the basis of characterization data, distorted tetrahedral geometry is suggested for Zn(II), Cd(II) and Hg(II) complexes. The organic ligand (3AP) and their metal complexes were screened against gram negative pathogenic bacteria and fungi in vitro. The results are compared with our previous report J. Korean Chem. Soc. 2013, 57, 341 on 4-aminopyridine and nitrite ion complexes of the same metal ions.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.3
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• pp.177-180
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• 2020

This paper focuses on the 1,200-V level reverse conducting-insulated gate bipolar transistor (RC-IGBT). The structure of the RC-IGBT has an n+ collector at the collector terminal. The breakdown voltage, V_th, V_ce-sat, and turn-off time, and the electrical characteristics of a field-stop IGBT (FS-IGBT) and RC-IGBT are compared and analyzed using simulations. Based on the results, the RC-IGBT obtained a turn-off time of 320.6 ㎲ and a breakdown voltage of 1,720 V, while the FS-IGBT obtained a turn-off time of 742.2 ㎲ and a breakdown voltage of 1,440 V. Therefore, RC-IGBTs have faster on/off transitions and a higher breakdown voltage, which can reduce the size of the element.

• Journal of Power Electronics
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• v.17 no.3
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• pp.744-755
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• 2017

With the high penetration of various sustainable energy sources, the control and protection of Microgrids has become a challenging problem considering the inherent current limitation feature of inverter-based Distributed Generators (DGs) and the bidirectional power flow in Microgrids. In this paper, a hybrid control and protection scheme is proposed, which combines the traditional inverse-time overcurrent protection with the biased differential protection for different feeders with different kinds of loads. It naturally accommodates various control strategies such as P-Q control and V-f control. The parameter settings of the protection scheme are analyzed and calculated through a fast Fourier transform algorithm, and the stability of the control strategy is discussed by building a small signal model in MATLAB. Different operation modes such as the grid-connected mode, the islanding mode, and the transitions between these two modes are ensured. A Microgrid model is established in PSCAD and the analysis results show that a Microgrid system can be effectively protected against different faults such as the single phase to ground and the three phase faults in both the grid-connected and islanded operation modes.

• Transactions on Electrical and Electronic Materials
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• v.18 no.4
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• pp.211-216
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• 2017

The dielectric properties of two polyurethanes (PUs) with different hard segments, i.e., aromatic methylene di-p-phenyl diisocyanate (MDI) and aliphatic hexamethylene diisocyanate (HDI), were investigated in the temperature range of -100 to $100^{\circ}C$ and in the frequency range of 1 Hz to 3 kHz. The ${\alpha}$-relaxations induced by the glass transition of the equivalent soft segments in the two PUs occurred at relaxation times of ${\tau}=3.46{\times}10^{-3}s$ for MDI-PU and ${\tau}=3.39{\times}10^{-2}s$ for HDI-PU at $-20^{\circ}C$, in accord with the temperature-frequency superposition principle, resulting in similar shifting factors. However, different I-relaxations were observed for the two PUs. The I-relaxation of MDI-PU occurred due to the mobility of the chain extenders near $80^{\circ}C$ with a slower shifting rate than the ${\alpha}$-relaxation. On the other hand, I-relaxation arising from both the extender and the unconstrained hard segments of HDI-PU occurred at $70{\sim}100^{\circ}C$, indicating complicated dielectric behavior due to partial interaction with the ${\alpha}$-relaxation at high frequencies. Thus, the I-relaxation of HDI-PU did not follow the superposition principle. The dielectric behaviors of the PUs were mainly influenced by their phase transitions, which were affected by the structure and components of the materials.