• Title/Summary/Keyword: Electronic transitions

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Research and Stability Analysis of Active-Disturbance-Rejection-Control-Based Microgrid Controllers

  • Xu, Xiaoning;Zhou, Xuesong;Ma, Youjie;Liu, Yiqi
    • Journal of Power Electronics
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    • v.17 no.6
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    • pp.1611-1624
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    • 2017
  • With the rapid development of microgrid technology, microgrid projects are no longer limited to laboratory demonstrations and pilot platforms. It shows greater value in practical applications. Hence, the smooth interaction between a microgrid and the main grid plays a critical role. In this paper, a control method based on active disturbance rejection control (ADRC) is proposed in order to realize seamless transitions between grid-connected and islanding operation modes and stable operation with variable loads. It is verified by simulations that the proposed ADRC-based method features better performance when compared to conventional proportional-integral-differential (PID) control. Meanwhile, the stability of the third-order extended state observer (ESO) in second-order ADRC is validated by using Lyapunov stability criteria.

Magnetic and Spectroscopic Studies of some Oxovanadium(IV) Complexes having O = V(O)$_4$ Chromophore

  • Choi, Sung-Nak;Kim, Young-Inn;Shim, Yoon-Bo;Choo, Hi-Shik;Kim, Young-Jin
    • Bulletin of the Korean Chemical Society
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    • v.10 no.2
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    • pp.138-142
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    • 1989
  • Three oxovanadium(IV) complexes with bidentate ligands having only oxygen donor atoms, benzohydroxamic acid (Hben), 8-hydroxyquinoline-N-oxide(Hhqno) and picolinic acid-N-oxide (Hpicn) are prepared and magnetic and spectroscopic properties are investigated for the complexes $VO(ben)_2,\;VO(hqno)_2\;and \;VO(picn)_2.$ Magnetic data together with IR results strongly indicate that dimeric intermolecular interaction is significant in $VO(ben)_2$ while the presence of polymeric V-O${\cdot}{\cdot}$V-O interaction is suggestive in $VO(picn)_2$. For all three complexes, three electronic d-d transitions were observed; extremely strong optical absorption of these bands of $VO(ben)_2$ in DMSO are supposed to be arised from a great metal-ligand covalency. Some fundamental vibration modes of oxovanadium(IV) complexes were empirically assigned from the differences in the spectrum of metal complexes with free ligand.

CARS Spectra of HCI, N₂, and C₂H₂ in the Gas Phase

  • 백선종;김중희;박주연;이성열;김홍래
    • Bulletin of the Korean Chemical Society
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    • v.16 no.9
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    • pp.810-813
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    • 1995
  • Coherent anti-Stokes Raman scattering (CARS) spectra of HCl, N2, and the ν1 fundamental of C2H2 have been measured in the gas phase. The measured spectra show rotational structures which originate from the Q-branch transitions. The spectra have successfully been simulated with proper selection rules, line positions, and relative intensities from room temperature Boltzmann population distributions. The vibration-rotation interaction constant α of HCl in the ground electronic state has been measured from the rotationally resolved CARS spectra which is α=0.3076 cm-1. Possibilities of optical pumping and of measuring state specific energy distributions of molecules are discussed.

Luminescence of CaS:Bi

  • 김창홍;편종홍;최 한;김성진
    • Bulletin of the Korean Chemical Society
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    • v.20 no.3
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    • pp.337-340
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    • 1999
  • Luminescence of bismuth activated CaS, CaS:Bi, prepared in sodium polysulfide is studied. Excitation spectrum of CaS:Bi shows a band at 350 nm due to the recombination process between holes in Na+Ca2+ and electrons in conduction bands, in addition to bands at 260 nm from band gap of CaS, and at 320 nm (1S0→1P1) and at 420 nm (1S0→3P1) from electronic energy transitions of Bi. Emission band at 450 nm is from 3P1→1S0 transition of Bi3+, bands at 500 nm and 580 nm correspond to recombinations of electron donors (Bi3+Ca2+ and VS2-) with acceptors (VCa2+ and Na+Ca2+). Emission band of 3P1→1S0 transition is shifted to longer wavelength from CaS:Bi to BaS:Bi, due to the increase of the Stokes shift by the decrease of the crystal field parameter from CaS:Bi to BaS:Bi.

Development of environmentally friendly inorganic fluorescent pigments, A3V5O14 (A = K and Rb) and Cs2V4O11: Crystal structure, optical and color properties (친환경 무기 형광 안료 A3V5O14 (A = K and Rb) and Cs2V4O11 개발: 결정구조, 광학적 특성 및 착색 특성)

  • Jeong, Gyu Jin;Kim, Jin Ho;Lee, Younki;Hwang, Jonghee;Toda, Kenji;Bae, Byoungseo;Kim, Sun Woog
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.30 no.2
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    • pp.47-54
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    • 2020
  • To develop the bright-vivid red- and yellow-inorganic fluorescent pigments with high luminescence properties, A3V5O14 (A = K and Rb) and Cs2V4O11 inorganic pigments were synthesized by a water assisted solid state reaction (WASSR) method and a conventional solid state reaction method. Although impurity peaks corresponding to the AVO3 and AV3O8 (A = K, Rb, and Cs) were observed in all samples prepared, the trigonal structure A3V5O14 (A = K and Rb) and orthorhombic structure Cs2V4O11 were successfully obtained as a main phase. These inorganic pigments showed the broad absorption band (under 550 nm) originated from CT transitions of VO4 polyhedron, and the strong broad red- and green-emission bands due to 3T21A1 and 3T11A1 transitions of the [VO4]3- group. The A3V5O14 (A = K and Rb) and Cs2V4O11 pigments showed a bright-vivid red- and yellow-body color, where the a* values of the A3V5O14 (A = K and Rb) were +35.5 and +45.9, respectively, and b* value of Cs2V4O11 pigments was +50.3. The L* values of the A3V5O14 (A = K and Rb) and Cs2V4O11 inorganic pigments were over +45. These results indicate that the A3V5O14 (A = K and Rb) and Cs2V4O11 inorganic pigments could be an attractive candidate as a bright-vivid red- and yellow inorganic pigments.

A Novel type of High-Frequency Transformer Linked Soft-Switching PWM DC-DC Power Converter for Large Current Applications

  • Morimoto Keiki;Ahmed Nabil A.;Lee Hyun-Woo;Nakaoka Mutsuo
    • Journal of Electrical Engineering and Technology
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    • v.1 no.2
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    • pp.216-225
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    • 2006
  • This paper presents a new circuit topology of DC busline switch and snubbing capacitor-assisted full-bridge soft-switching PWM inverter type DC-DC power converter with a high frequency link for low voltage large current applications as DC feeding systems, telecommunication power plants, automotive DC bus converters, plasma generator, electro plating plants, fuel cell interfaced power conditioner and arc welding power supplies. The proposed power converter circuit is based upon a voltage source-fed H type full-bridge high frequency PWM inverter with a high frequency transformer link. The conventional type high frequency inverter circuit is modified by adding a single power semiconductor switching device in series with DC rail and snubbing lossless capacitor in parallel with the inverter bridge legs. All the active power switches in the full-bridge inverter arms and DC busline can achieve ZVS/ZVT turn-off and ZCS turn-on commutation operation. Therefore, the total switching losses at turn-off and turn-on switching transitions of these power semiconductor devices can be reduced even in the high switching frequency bands ranging from 20 kHz to 100 kHz. The switching frequency of this DC-DC power converter using IGBT power modules is selected to be 60 kHz. It is proved experimentally by the power loss analysis that the more the switching frequency increases, the more the proposed DC-DC converter can achieve high performance, lighter in weight, lower power losses and miniaturization in size as compared to the conventional hard switching one. The principle of operation, operation modes, practical and inherent effectiveness of this novel DC-DC power converter topology is proved for a low voltage and large current DC-DC power supplies of arc welder applications in industry.

Optical Properties of Self-assembled InAs Quantum Dots with Bimodal Site Distribution (이중 크기분포를 가지는 자발형성 InAs 양자점의 광특성 평가)

  • Jung, S.I.;Yeo, H.Y.;Yun, I.;Han, I.K.;Lee, J.I.
    • Journal of the Korean Vacuum Society
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    • v.15 no.3
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    • pp.308-313
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    • 2006
  • We report a photoluminescence (PL) study on the growth process of self-assembled InAs quantum dots (QDs) under the various growth conditions. Distinctive double-peak feature was observed in the PL spectra of the QD samples grown at the relatively high substrate temperature. From the excitation power-dependent PL and the temperature-dependent PL measurements, the double-peak feature is associated with the ground state transitions from InAs QDs with two different size branches. In addition, the variation in the bimodal size distribution of the QD ensembles with different InAs coverage is demonstrated.

A New Low Power Scan BIST Architecture Based on Scan Input Transformation Scheme (스캔입력 변형기법을 통한 새로운 저전력 스캔 BIST 구조)

  • Son, Hyeon-Uk;Kim, You-Bean;Kang, Sung-Ho
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.45 no.6
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    • pp.43-48
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    • 2008
  • Power consumption during test can be much higher than that during normal operation since test vectors are determined independently. In order to reduce the power consumption during test process, a new BIST(Built-In Self Test) architecture is proposed. In the proposed architecture, test vectors generated by an LFSR(Linear Feedback Shift Resister) are transformed into the new patterns with low transitions using Bit Generator and Bit Dropper. Experiments performed on ISCAS'89 benchmark circuits show that transition reduction during scan testing can be achieved by 62% without loss of fault coverage. Therefore the new architecture is a viable solution for reducing both peak and average power consumption.

Quantum Chemical Studies on Nicotinato Lead(II) Complex [Pb(II)(C5H4NCOO)2]

  • Zhao, Pu Su;Li, Rong Qing;Song, Jie;Guo, Meng Ping
    • Bulletin of the Korean Chemical Society
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    • v.29 no.3
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    • pp.546-550
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    • 2008
  • The title compound of nicotinato lead(II) complex [Pb$(C_5H_4NCOO)_2$] has been optimized at B3LYP/LANL2DZ and HF/LANL2DZ levels of theory. The calculated results show that the lead(II) ion adopts 2- coordinate geometry, which is the same as its crystal structure and different from the 4-coordinate geometry of isonicotinato lead(II) complex. Atomic charge distributions indicate that during forming the title compound, each nicotinic acid ion transfers their negative charges to central lead(II) ion. The electronic spectra calculated by B3LYP/LANL2DZ level show that there exist two absorption bands, which have some red shifts compared with those of isonicotinato lead(II) complex and the electronic transitions are mainly derived from intraligand $\pi$ -$\pi$ transition and ligand-to-metal charge transfer (LMCT) transition. CIS-HF method is not suitable for the system studied here. The thermodynamic properties of the title compound at different temperatures have been calculated and corresponding relations between the properties and temperature have also been obtained. The second order optical nonlinearity was calculated, and the molecular hyperpolarizability was $1.147754{\times}10^{-30}$ esu.

Electrical Properties of Conductive Copper Filler/Epoxy Resin Composites (전도성 구리충전제/에폭시수지 복합체의 전기적 특성)

  • Lee, Jung-Eun;Park, Young-Hee;Oh, Seung-Min;Lim, Duk-Jum;Oh, Dae-Hee
    • Journal of the Korean Applied Science and Technology
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    • v.30 no.3
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    • pp.472-479
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    • 2013
  • The conductive polymer composites recently became increasingly to many fields of industry due to their electrical properties. To understand these properties of composites, electrical properties were measured and were studied relatively. Electrical conductivity measurements showed percolation phenomena. Percolation theories are frequently applied to describe the insulator-to-conductor transitions in composites made of a conductive filler and an insulating matrix. It has been showed both experimentally and theoretically that the percolation threshold strongly depends on the aspect ratio of filler particles. The critical concentration of percolation formed is defined as the percolation threshold. This paper was to study epoxy resin filled with copper. The experiment was made with vehicle such as epoxy resin replenished with copper powder and the study about their practical use was performed in order to apply to electric and electronic industry as well as general field. The volume specific resistance of epoxy resin composites was 3.065~13.325 in using copper powder. The weight loss of conductive composites happened from $350^{\circ}C{\sim}470^{\circ}C$.