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Optical Properties of Self-assembled InAs Quantum Dots with Bimodal Site Distribution  

Jung, S.I. (Department of Electrical and Electronic Engineering, Yonsei University)
Yeo, H.Y. (Department of Electrical and Electronic Engineering, Yonsei University)
Yun, I. (Department of Electrical and Electronic Engineering, Yonsei University)
Han, I.K. (Nano Devices Research Center, Korea Institute of Science and Technology)
Lee, J.I. (Advanced Industrial Metrology Group, Korea Research Institute of Standards and Science)
Publication Information
Journal of the Korean Vacuum Society / v.15, no.3, 2006 , pp. 308-313 More about this Journal
Abstract
We report a photoluminescence (PL) study on the growth process of self-assembled InAs quantum dots (QDs) under the various growth conditions. Distinctive double-peak feature was observed in the PL spectra of the QD samples grown at the relatively high substrate temperature. From the excitation power-dependent PL and the temperature-dependent PL measurements, the double-peak feature is associated with the ground state transitions from InAs QDs with two different size branches. In addition, the variation in the bimodal size distribution of the QD ensembles with different InAs coverage is demonstrated.
Keywords
Quantum dot; InAs; Bimodal size distribution; Photo-luminescence;
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