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The preferred orientation and morphology characteristics of AlN thin films prepared by RF power under Room Temperature process (저온공정을 이용한 AlN 박막의 우선배향성과 모폴로지에 관한 연구)

  • Oh, Su-Young;Lee, Tae-Yong;Kim, Eung-Kwon;Kang, Hyun-Il;Song, Joon-Tae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.11a
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    • pp.313-314
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    • 2007
  • AlN is used a wide variety of applications such as electroacoustic devices, blue diode and metal-insulator-semiconductor structures. AlN thin films were deposited on Si substrates by rf sputter technique with low temperature process. The orientation and morphology of AlN thin films at various power in the range from 150 to 300 w was studied. X-ray diffraction (XRD), full width at half-maximum (FWHM) and field emission scanning electron microscopy were employed to characterize the deposited films. The c-axis orientation along (002) Plane at experimental results was enhanced with the increasing of the rf power from 150 to 300 w and the surface morphology of the films showed a homogeneous and nano-sized microstructure.

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Preparation the AlN thin films with the Al bottom electrode (Al 하부전극을 이용한 AlN 박막의 제작)

  • Kim, Geon-Hi;Keum, Min-Jong;Kim, Hyun-Woong;Kim, Kyung-Hwan
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.04b
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    • pp.101-104
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    • 2004
  • In this study AlN/Al thin films were prepared at various conditions, such as $N_2$ gas flow rate $[N_2/(N_2+Ar)]$ from 0.6 to 0.9, a substrate temperature ranging from room temperature to $300^{\circ}C$ and working pressure 1mTorr. We estimated crystallographic characteristics and c-axis preferred orientations of AlN/Al thin films as function of Al electrode surface roughfness. The optimal processing conditions for Al electrode were found at substrate temperature of $300^{\circ}C$, sputtering power of 100W and a working pressure of 2mTorr. In these conditions, we obtained the c-axis preferred orientation of $AlN/Al/SiO_2/Si$ thin film about 4 degree.

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Annealing Effects of Laser Ablated PZT Films

  • Rhie, Dong-Hee;Jung, Jin-Hwee;Cho, Bong-Hee;Ryutaro Maeda
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.07a
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    • pp.528-531
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    • 2000
  • Deposition of PZT with UV laser ablatio was applied for realization of thin film sensors and actuators. Deposition rate of more than 20nm/min was attained by pulsed KrF excimer laser deposition, which is fairly better than those obtained by the other methods. Perovskite phase was obtained at room temperature deposition with Fast Atom Beam(FAB) treatment and annealing. Smart MEMS(Micro electro-mechanical system) is now a suject of interest in the field of micro optical devices, micro pumps, AFM cantilever devices etc. It can be fabricated by deposition of PZT thin films and micromachining. PZT films of more than 1 micron thickness is difficult to obtain by conventional methods. This is the reason why we applied excimer laser ablation for thin film deposition. The remanent polarization Pr of 700nm PZT thin film was measured, and the relative dielectric constant was determined to about 900 and the dielectric loss tangent was also measured to be about 0.04. XRD analysis shows that, after annealing at 650 degrees C in 1 hour, the perovskite structure would be formed with some amount of pyrochlore phase, as is the case of the annealing at 750 degrees C in 1 hour.

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Effect of In Situ YAG on Properties of the Pressureless-Sintered SiC-$ZrB_2$ Electroconductive (상압소결(常壓燒結)한 SiC-$ZrB_2$ 도전성(導電性) 복합체(複合體)의 특성(特性)에 미치는 In Situ YAG의 영향(影響))

  • Shin, Yong-Deok;Ju, Jin-Young;Ko, Tae-Hun;Lee, Jung-Hoon
    • Proceedings of the KIEE Conference
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    • 2008.07a
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    • pp.1230-1231
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    • 2008
  • The effect of content of $Al_2O_3+Y_2O_3$ sintering additives on the densification behavior, mechanical and electrical properties of the pressureless-sintered $SiC-ZrB_2$ electroconductive ceramic composites was investigated. The $SiC-ZrB_2$ electroconductive ceramic composites were pressureless-sintered for 2 hours at 1,700[$^{\circ}C$] temperatures with an addition of $Al_2O_3+Y_2O_3$(6:4 mixture of $Al_2O_3$ and $Y_2O_3$) as a sintering aid in the range of 8${\sim}$20[wt%]. Phase analysis of $SiC-ZrB_2$ composites by XRD revealed mostly of ${\alpha}$-SiC(6H), $ZrB_2$ and In Situ YAG($Al_5Y_3O_{12}$). The relative density, flexural strength, Young's modulus and vicker's hardness showed the highest value of 89.01[%], 81.58[Mpa], 31.437[GPa] and 1.34[GPa] for $SiC-ZrB_2$ composites added with 16[wt%] $Al_2O_3+Y_2O_3$ additives at room temperature respectively. Abnormal grain growth takes place during phase transformation from ${\beta}$-SiC into ${\alpha}$-SiC was correlated with In Situ YAG phase by reaction between $Al_2O_3$ and $Y_2O_3$ additive during sintering. Compositional design and optimization of processing parameters are key factors for controlling and improving the properties of SiC-based electroconductive ceramic composites. In this paper, it is convinced that ${\beta}$-SiC based electroconductive ceramic composites for heaters or ignitors can be manufactured by pressureless sintering.

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Electrical Properties of SiC Composites by Transition Metal (천이금속에 따른 SiC계 복합체의 전기적 특성)

  • Shin, Yong-Deok;Seo, Je-Ho;Ju, Jin-Young;Ko, Tae-Hun;Kim, Young-Bek
    • Proceedings of the KIEE Conference
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    • 2007.07a
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    • pp.1303-1304
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    • 2007
  • The composites were fabricated, respectively, using 61[vol.%]SiC-39[vol.%]$TiB_2$ and using 61[vol.%]SiC-39[vol.%]$ZrB_2$ powders with the liquid forming additives of 12[wt%] $Al_{2}O_{3}+Y_{2}O_{3}$ by hot pressing annealing at $1650[^{\circ}C]$ for 4 hours. Reactions between SiC and transition metal $TiB_2$, $ZrB_2$ were not observed in this microstructure. ${\beta}{\rightarrow}{\alpha}$-SiC phase transformation was occurred on the SiC-$TiB_2$ and SiC-$ZrB_2$ composite. The relative density, the flexural strength and Young's modulus showed the highest value of 98.57[%], 226.06[Mpa] and 86.38[Gpa] in SiC-$ZrB_2$ composite at room temperature respectively. The electrical resistivity showed the lowest value of $7.96{\times}10^{-4}[{\Omega}{\cdot}cm]$ for SiC-$ZrB_2$ composite at $25[^{\circ}C]$. The electrical resistivity of the SiC-$TiB_2$ and SiC-$ZrB_2$ composite was all positive temperature coefficient resistance (PTCR) in the temperature ranges from $25[^{\circ}C]$ to $700[^{\circ}C]$. The resistance temperature coefficient of composite showed the value of $6.88{\times}10^{-3}/[^{\circ}C]$ and $3.57{\times}10^{-3}/[^{\circ}C]$ for SiC-$ZrB_2$ and SiC-$TiB_2$ composite in the temperature ranges from $25[^{\circ}C]$ to $700[^{\circ}C]$.

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The Design and Fabrication of RESURF type SOI n-LDMOSFET (RESURF type의 SOI n-LDMOSFET 소자 설계 및 제작)

  • Kim, Jae-Seok;Kim, Beom-Ju;Koo, Jin-Gen;Koo, Yong-Seo;An, Chul
    • Proceedings of the IEEK Conference
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    • 2004.06b
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    • pp.355-358
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    • 2004
  • In this work, N-LDMOSFET(Lateral Double diffused MOSFET) was designed and fabricated on SOI(Silicon-On-Insulator) substrate, for such applications as motor controllers and high voltage switches, fuel injection controller systems in automobile and SSR(Solid State Rexay)etc. The LDMOSFET was designed to overcome the floating body effects that appear in the conventional thick SOI MOS structure by adding p+ region in source region. Also, RESURF(Reduced SURface Field) structure was proposed in this work in order to reduce a large on-resistance of LDMOSFET when operated keeping high break down voltage. Breakdown voltage was 268v in off-state ($V_{GS}$=OV) at room temperature in $22{\mu}m$ drift length LDMOSFET. When 5V of $V_{GS}$ and 30V of $V_{DS}$ applied, the on resistance(Ron), the transcon ductance($G_m$) and the threshold voltage($V_T$) was 1.76k$\Omega$, 79.7uA/V and 1.85V respectively.

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Simulations of Optical Characteristics according to the Silicon Oxide Pattern Distance Variation using an Atomic Force Microscopy (AFM) (AFM을 이용한 나노 패턴 형성과 크기에 따른 광특성 시뮬레이션)

  • Hwang, Min-Young;Moon, Kyoung-Sook;Koo, Sang-Mo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.23 no.6
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    • pp.440-443
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    • 2010
  • We report a top-down approach based on atomic force microscopy (AFM) local anodic oxidation for the fabrication of the nano-pattern field effect transistors (FETs). AFM anodic oxidation is relatively a simple process in atmosphere at room temperature but it still can result in patterns with a high spatial resolution, and compatibility with conventional silicon CMOS process. In this work, we study nano-pattern FETs for various cross-bar distance value D, from ${\sim}0.5\;{\mu}m$ to $1\;{\mu}m$. We compare the optical characteristics of the patterned FETs and of the reference FETs based on both 2-dimensional simulation and experimental results for the wavelength from 100 nm to 900 nm. The simulated the drain current of the nano-patterned FETs shows significantly higher value incident the reference FETs from ${\sim}1.7\;{\times}\;10^{-6}A$ to ${\sim}2.3\;{\times}\;10^{-6}A$ in the infrared range. The fabricated surface texturing of photo-transistors may be applied for high-efficiency photovoltaic devices.

Building Virtual Meeting System using Groupware (그룹웨어를 이용한 가상회의시스템 구축에 관한 연구)

  • Ryu, Il;So, Soon-Hoo
    • Journal of the Korea Society of Computer and Information
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    • v.3 no.2
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    • pp.45-55
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    • 1998
  • The purpose of our study is to develop a prototype groupware environment that addresses the different phases of meetings as well as to provide for customizable meetings. We describe several components that can be used to support the entire life-cycle of a distributed meeting. Our design is based on the premise that meetings are comprised of three stages: pre-meeting setup, during meeting activities, and post-meeting teardown. Additionally, meetings are individual, each requiring a different set of tools and applications. Our protype contains six components to support these stages. These components are electronic mail, bulletin board, organizer, agendas, virtual meeting room, and storyboard viewer.

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Fabrication and Characteristics of Indium Tin Oxide Films on CR39 Substrate for OTFT

  • Kwon, Sung-Yeol
    • Transactions on Electrical and Electronic Materials
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    • v.7 no.5
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    • pp.267-270
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    • 2006
  • The Indium tin oxide (ITO) films were deposited on CR39 substrate using DC magnetron sputtering. ITO thin films deposited at room temperature because CR39 substrates its glass-transition temperature of is $130^{\circ}C$. ITO thin films used bottom and top electrode and for organic thin film transparent transistor.(OTFT) ITO thin film electrodes electrical properties and optical transparency properties in the visible wavelength range (300 - 800 nm) strongly dependent on volume of oxygen percent. For the optimum resistivity and transparency of ITO thin film electrode achieved with a 75 W plasma power, 10 % volume of oxygen and a 27 nm/min deposition rate. Above 85 % transparency in the visible wavelength range (300 - 800 nm) measured without post annealing process and $9.83{times}10{-4}{\Omega}cm$ a low resistivity was measured thickness of 300 nm.

Application of Electronic Retailing in Apparel (의류를 중심으로 한 전자상거래의 활용 실태에 관한 연구)

  • Won, Myung-Sim
    • Korean Journal of Human Ecology
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    • v.8 no.3
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    • pp.511-524
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    • 1999
  • This research examines 13 Korean Web sites and 15 foreign Web Sites to explore how companies present apparel products by both layout of graphics and information at the Web sites. The results show that most Web sites display tiny icons next to the item's text description. Clicking on these icons takes the customers to another web page, where the full size photograph of the item appears. The results also revealed that most web sites offer shopping bag function and payment options such as on-line and credit cards. The results indicate that Web sites are constantly evolving and following functions such as virtual dressing room, FAQ, the links, E-Cash payment, currency converter and multilingual sites are becoming standards in the near future.

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