• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1469-1471
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• 1997

In this study, Organic electroluminescent(EU devices with multilayer structures were fabricated using tris (8-hydroxy quinolinate) aluminum($Alq_3$) as an electron-tran sporting emitting layer and TPD(N,N'-diphenyl-N,N'-bis(3-methylphenyl)-[1,1'-biphenyl]-4,4'-diamine : aromatic diamine) as a hole-transporting layer. A cell with a structure of glass substrate/indium-tin-oxide(ITO)/$Alq_3$/TPD/Mg:In exhibited bright green electroluminescence from the TPD layer. The peak intensity of TPD and $Alq_3$ different from spin coating and vacuum evaporation. The peak emission energy shifts to a higher energy with deposition technique. An emission peak at 500nm was achieved at a driving voltage of 30V.

• Structural Engineering and Mechanics
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• v.42 no.5
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• pp.747-760
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• 2012

In today's online social structure, people with electronic devices or network have been closely related to whether any of the activities, work, school, etc., is related to electronic devices, intelligent robot, and network control. The best mobility and the first rich media of these products as smart phones, smart phones rise rapidly in recent years, high speed processing performance and high free way to install software, deeply loved by many business people. However, not only for smart phone business aspects of the use, but also can engage in education of the teachers or the students are learning a great help. This study construct OCR-assisted learning software written by the JAVA made, and the installation is provided by the Android mobile phone users.

• Journal of the Optical Society of Korea
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• v.1 no.1
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• pp.52-59
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• 1997

In this paper, we propose a system design for a parallel3-dimensional optical interconnection network utilizing variable grating mode liquid crystal devices (VGM LCD's) which are optical transducers capable of performing intensity-to-spatial-frequency conversion. The proposed system performs real-time, reconfigurable, but blocking and nonbroadcasting 3-dimensional optical interconnections. The operating principles of the 3-D optical interconnection network are described, and some of the fundamental limitations are addressed. The system presented in this paper can be directly used as a configuration of switching elements for the 2-D optical perfect-shuffle dynamic interconnection network, as well as for a B-ISDN photonic switching system.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.2
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• pp.79-83
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• 2016

This research was analyzed thermal characteristics that was appointed disadvantage when smart LED driver ICs was packaged and we applied extracted thermal characteristics for optimal layout design. We confirmed reliability of smart LED driver ICs package without additional heat sink. If the package is not heat sink, we are possible to minimize package. For extracting thermal loss due to overshoot current, we increased driver current by two and three times. As a result of experiment, we obtained 22 mW and 49.5 mW thermal loss. And we obtained optimal data of 350 mA driver current. It is important to distance between power MOSFET and driver ICs. If thhe distance was increased, the temperature of package was decreased. And so we obtained optimal data of 3.7 mm distance between power MOSFET and driver ICs. Finally, we fabricated real package and we analyzed the electrical characteristics. We obtained constant 35 V output voltage and 80% efficiency.

• Journal of the Microelectronics and Packaging Society
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• v.19 no.1
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• pp.9-16
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• 2012

Currently due to increasing integration of various electronic devices and need of multi-functions, more and more heat is produced and for electronic devices to achieve maximum performance with optimum life time, heat dissipation is critical. A solution to such problems is use of high heat dissipative insulating sheet. In this paper status of current products are introduced and several technology aspects to meet the demand of increased heat dissipation needs is introduced.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.212-213
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• 2008

This paper describes the analysis of the device characteristics of the NPT type 1200V Insulated gate Bipolar Transistor. In case of NPT type IGBT devices, optimized n-epi layer thickness and concentration is important to obtain low on-state voltage and breakdown voltage characteristics. In this paper, we analyzed on-state and off-state characteristics of NPT type IGBT. Breakdown voltage of designed IGBT was higher than 1200V when we optimized Field Limiting Ring structures. And also, on-state voltage characteristics was shown less then 2.5V at 25A of drain current.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.12
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• pp.759-763
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• 2016

We demonstrate the utilization of ion gel gate dielectrics for operating non-volatile transistor memory devices based on polymer semiconductor thin films. The gating process in typical electrolyte-gated polymer transistors occurs upon the penetration and escape of ionic components into the active channel layer, which dopes and dedopes the polymer film, respectively. Therefore, by controlling doping and dedoping processes, electrical current signals through the polymer film can be memorized and erased over a period of time, which constitutes the transistor-type memory devices. It was found that increasing the thickness of polymer films can enhance the memory performance of device including (i) the current signal ratio between its memorized state and erased state and (ii) the retention time of the signal.

• Proceedings of the KIPE Conference
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• 2013.07a
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• pp.47-48
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• 2013

In order to evaluate the response of the grid-connected systems, Phase lock technology is widely used in power electronic devices to obtain the phase angle, amplitude, and frequency of the grid voltage because phase locked loop (PLL) algorithms are very important for grid synchronization and monitoring in the grid connected power electronic devices. This paper presents a performance evaluation in tracking grid angular frequency through single phase synchronization techniques which are an enhanced PLL (EPLL), second-order generalized integrator-PLL (SOGI-PLL), and second-order generalized integrator-frequency locked loop (SOGI-FLL). These techniques are properly analyzed through several steps to get the best technique which can track the frequency accurately and smoothly.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.55-58
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• 1998

Recently, neural networks with self-adaptability like human brain have attracted much attention. It is desirable for the neuron-function to be implemented by exclusive hardware system on account of huge quantity in calculation. We have proposed a novel neuro-device composed of a MFSFET(ferroelectric gate FET) and oscillation circuit with CUJT(complimentary unijuction transistor) and PUT(programmable unijuction transistor). However, it is difficult to preserve ferroelectricity on Si due to existence of interfacial traps and/or interdiffusion of the constitutent elements, although there are a few reports on good MFS devices. In this paper, we have simulated CUJT and PUT devices instead of fabricating them and composed oscillation circuit. Finally, we have resented, as an approach to the MFSFET neuron circuit, adaptive learning function and characterized the elementary operation properties of the pulse oscillation circuit.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.10
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• pp.790-795
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• 1998

Fabrication of inverted staggered power TFT devices and electrical characteristic were investigated. 16 fingers with drain and source electrode of TFT and 100V output voltage were designed successfully. It is observed that as $V_g$ increased, $I_d$ increase exponentially. Because of localized deep states of a-Si, $I_d$ shows irregular variation at low voltage. Output and transfer characteristic showed the same as typical variation. But electrical characteristic strongly depend on the channel length and thickness of silicon nitride and amorphous silicon.