• Proceedings of the KIEE Conference
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• 2000.11c
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• pp.446-448
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• 2000

Organic semiconductors based on vacuum-deposited films of fused-ring polycyclic aromatic hydrocarbon have great potential to be utilized as an active layer for electronic and optoelectronic devices. In this study, pentacene thin films and electrode materials were deposited by Organic Molecular Beam Deposition (OMBD) and vacuum evaporation respectively. For the gate dielectric layer, OPTMER PC403 photo acryl (JSR Coporation.) was spin-coated and cured at $220^{\circ}C$. Electrical characteristics of the devices were investigated, where the channel length and width was $50{\mu}m$ and 5 mm. It was found that field effect mobility was $0.039\;cm^2V^{-1}s^{-1}$, threshold voltage was -7 V, and on/off current ratio was $10^6$.

• Proceedings of the KIEE Conference
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• 1998.07e
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• pp.1675-1677
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• 1998

It is currently increasing to use surge protection devices in the protection of various electronic circuits from the transient overvoltages such as lightning strikes and switching surges. For this reason, the simulation methods, which can easily predict the protection performance of the devices, are strongly required in order to design the adequate surge protection circuits in lightning surge cut-off performance and economic aspects. This paper deals with ZnO varistor modeling method for designing a surge protection circuit and suggests the Pspice simulation model which takes the characteristic of varying clamping voltage into consideration during the time-to-crest, in range of $8{\sim}30{\mu}s$, of surge current applied to a ZnO varistor. The ZnO varistor Pspice simulation data introduced in this paper has produced almost same values as the measured results experimentally.

• Journal of Magnetics
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• v.11 no.3
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• pp.108-110
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• 2006

We successfully enhanced the performance of a spin valve by inserting an ultra-thin layer of partially oxidized Fe in the pinned and free layers. With the exchange bias field kept large, the spin valve reached a GMR of 12%, which corresponded to a 55% increase in GMR when we compared it with that of spin valves without any inserted layer. The layer of partially oxidized Fe was more effective for improving the properties of the spin valve than the layer of partially oxidized $Co_{90}Fe_{10}$. Considering all the results, we can contribute the significant improvement to the combined effect of the modified local electronic structures at the Fe impurities and theenhanced spin-dependent reflections at the $\alpha-Fe_{2}O_{3} phase in the magnetic layer.

• Korean Journal of Materials Research
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• v.18 no.5
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• pp.272-276
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• 2008

In submicron MOSFET devices, maintaining the ratio between the channel length (L) and the channel depth (D) at 3 : 1 or larger is known to be critical in preventing deleterious short-channel effects. In this study, n-type SOI-MOSFETs with a channel length of $0.1\;{\mu}m$ and a Si film thickness (channel depth) of $0.033\;{\mu}m$ (L : D = 3 : 1) were virtually fabricated using a TSUPREM-4 process simulator. To form functioning transistors on the very thin Si film, a protective layer of $0.08\;{\mu}m$-thick surface oxide was deposited prior to the source/drain ion implantation so as to dampen the speed of the incoming As ions. The p-type boron doping concentration of the Si film, in which the device channel is formed, was used as the key variable in the process simulation. The finished devices were electrically tested with a Medici device simulator. The result showed that, for a given channel doping concentration of $1.9{\sim}2.5\;{\times}\;10^{18}\;cm^{-3}$, the threshold voltage was $0.5{\sim}0.7\;V$, and the subthreshold swing was $70{\sim}80\;mV/dec$. These value ranges are all fairly reasonable and should form a 'magic region' in which SOI-MOSFETs run optimally.

• Journal of Korea Society of Digital Industry and Information Management
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• v.11 no.4
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• pp.25-31
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• 2015

Smart healthcare environments which merge medical and IT technology are getting ready for the third generation centering EHR from current second generation. As a basic technology for the introduction and activation of EHR systems it requires heterogeneous network interworking techniques between various wired and wireless medical devices. Interworking technology for heterogeneous network among various medical devices is needed to introduce EHR system. The heterogeneous network interworking technology is needed for construction of a reliable data system to convert each of unstructured data into structured data. Therefore, in this paper, we identify the domestic and international trends of smart medical field and analyze the characteristics of wired and wireless communication technology that is used in a heterogeneous network. and also suggest requirements needed for interworking technology and provide interworking technology based on them. we expect that proposed method which is designed for smart healthcare environments would provide a basic architecture needed for third smart medical technology generation.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.587-587
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• 2013

ZnS is well-known direct band gap II-VI semiconductor, and it attracts intense interest due to its excellent properties of luminescence which enable ZnS to have promising materials for optical, photonic and electronic devices. Especially, the emission wavelength of ZnS falls in the UV absorption band of most organic compoundsand biomolecules, thus it is envisaged that ZnS based devices may find applications in increasingly important fluorescence sensing. We have developed a facile and effective one-step process for the fabrication of single-crystalline and pure-wurtzite ZnS nanostructures possessing sharp band-edge emission at room-temperature having diverse length-to-width ratios. Each of nanostructures was composed of chemically pure, structurally uniform, single-crystalline, and defect-free ZnS. These features not only suppress trap or surface states emission centered at 420 nm, but also enhance UV band-edge emission centered at 327 nm, which give as-synthesized our ZnS nanostructures possible sharp UV emission at room temperature. The reaction medium consisting of mixed solvents such as hydrazine, ethylenediamine, and water as well as proper reaction time and temperature have played an important role in the crystallinity and optical properties of ZnS nanostructures. As-synthesized our ZnS nanostructures possessing sharp UV emission guarantee high potential for both fundamental research and technological applications.

• Journal of Astronomy and Space Sciences
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• v.14 no.1
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• pp.80-86
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• 1997

High energy particles in the earth's radiation belts cause transient and long term effects on electronic materials, devices, and integrated circuits on board the satellites. Hence, it is very important to have the information on the space radiation environment and the damage on the electronics caused by the se high energy particles. One of the radiation monitor devices frequently used in space is RADFET, a specially designed MOSFET with a thick gate oxide region. The present study focuses on the calibration of RADFET TOT500 using the $Co^{60}{\gamma}-ray$ source. The result shows that the response of RADFET is very sensitive to the change of temperature. The peculiar behavior observed in the TDE (Total Dose Experiment) on board the KITSAT-1 is identified as the thermal effect due to the change in the eclipse rate of the satellite.

• International Journal of Air-Conditioning and Refrigeration
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• v.8 no.2
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• pp.60-68
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• 2000

An experimental study was peformed to investigate characteristics of an inverter driven heat pump system with a variation of compressor frequency and expansion device. The compressor frequency varied from 30Hz to 75Hz, and the performance of the system ap-plying three different expansion devices such as capillary tube, thermostatic expansion valve(TXV), and electronic expansion valve (EEV) was measured. The load conditions were altered by varying the temperatures of the secondary fluid entering condenser and evaporator with a constant flow rate. When the test condition was deviated from the standard value(rated value), TXV and EEV showed better performance than capillary tube due to optimal control of mass flow rate and superheat. In the present study, it was observed that the variable area expansion device had better performance than constant area expansion device in the inverter heat pump system due to active control of flow area with a change of com-pressor frequency and load conditions.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.7
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• pp.464-472
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• 2001

Asymmetric n-MOSFET＇s for improving packing density have been fabricated with 0.35 ${\mu}{\textrm}{m}$ CMOS process. Electrical characteristics of asymmetric n-MOSFET show a lower saturation drain current and a higher linear resistance compared to those of symmetric devices. Substrate current of asymmetric MOSFET is lower than that of symmetric devices. Asymmetric n-MOSFET＇s have been modeled using a parasitic resistance associated with abnormally structured drain or source and a conventional n-MOSFET model. MEDICI simulation has been done for accuracy of this modeling. Simulated values of reverse as we11 as forward saturation drain current show good agreement with measured values for asymmetric device.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.1
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• pp.1-7
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• 2013

In this paper, a biosensor based on a gated lateral bipolar junction transistor (BJT) is proposed. The gated lateral BJT can function as both a metal-oxide-semiconductor field-effect transistor (MOSFET) and a BJT. By using the self-assembled monolayer (SAM) method, the C-reactive protein antibodies were immobilized on the floating gate of the device as the sensing membrane. Through the experiments, the characteristics of the biosensor were analyzed in this study. According to the results, it is indicated that the gated lateral BJT device can be successfully applied as a biosensor. Additionally, we found that the sensitivity of the gated lateral BJT can be varied by adjusting the emitter (source) bias.