• Journal of Welding and Joining
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• v.32 no.3
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• pp.34-42
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• 2014

Flexible devices have been developed from their rigid, heavy origins to become bendable, stretchable and portable. Such a paper displays, e-skin, textile electronics are emerging research areas and became a mainstream of overall industry. Thin film transistors, diodes and sensors built on plastic sheets, textile and other unconventional substrates have a potential applications in wearable displays, biomedical devices and electronic system. In this review, we describe current trends in technologies for flexible/wearable electronics.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.1
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• pp.1-9
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• 2006

We introduce our in-house program, NANOCAD, for the modeling and simulation of carrier transport in nanoscale MOSFET devices including quantum-mechanical effects, which implements two kinds of modeling approaches: the top-down approach based on the macroscopic quantum correction model and the bottom-up approach based on the microscopic non-equilibrium Green’s function formalism. We briefly review these two approaches and show their applications to the nanoscale bulk MOSFET device and silicon nanowire transistor, respectively.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.1
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• pp.16-21
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• 2006

A simple doping method to fabricate a very thin channel body of the p-type FinFETs with a 20 nm gate length by solid-phase-diffusion (SPD) process was developed. Using the poly-boron-films (PBF) as a novel diffusion source of boron and the rapid thermal annealing (RTA), the p-type sourcedrain extensions of the FinFET devices with a threedimensional structure were doped. The junction properties of boron doped regions were investigated by using the $p^+-n$ junction diodes which showed excellent electrical characteristics. Single channel and multi-channel p-type FinFET devices with a gate length of 20-100 nm was fabricated by boron diffusion process using PBF and revealed superior device scalability.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.4
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• pp.311-317
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• 2008

The measurement of dark ${\sigma}_D$, gamma-induced ${\sigma}_{\gamma}$ conductivities and the expected conductivity modulation ${\Delta}_{\sigma}$ in silicon wafers/samples is studied for developing a new technique for carrier lifetime evaluation. In this paper a simple method is introduced to find the carrier lifetime variations with the measured conductivity and conductivity modulation under dark and gamma irradiation conditions. It will be concluded that this simple method enables us to give an improved wafer evaluation, processing and quality control in the field of photovoltaic materials and other electronic devices.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.114.2-114.2
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• 2014

The orientation of the constituent molecules in organic thin film devices can affect significantly their performance due to the highly anisotropic nature of ${\pi}$-conjugated molecules. We report here an angle dependent x-ray absorption study of the control of such molecular orientation using well-ordered interlayers for the case of a bilayer heterojunction of chloroaluminum phthalocyanine (ClAlPc) and C60. Furthermore, the orientation-dependent energy level alignment of the same bilayer heterojunction has been measured in detail using synchrotron radiation-excited photoelectron spectroscopy. Regardless of the orientation of the organic interlayer, we find that the subsequent ClAlPc tilt angle improves the ${\pi}-{\pi}$ interaction at the interface, thus leading to an improved short-circuit current in photovoltaic devices based on ClAlPc/C60. The use of the interlayers does not change the effective band gap at the ClAlPc/C60 heterointerface, resulting in no change in open-circuit voltage.

• Proceedings of the KIPE Conference
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• 1998.10a
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• pp.851-854
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• 1998

In recent years, a cost-effective voltage-source type single-ended resonant-load inverter using MOS gate power switching devices and its related resonant inverter topologies have been commonly used for induction-heated cooking appliances because of relatively-lowered switching losses, simple circuit topology, low cost, compactness and low harmonic current in utility AC side. This paper present some comparative performance evaluations of IGBTs as sample devices in each generation and MOS controlled Thyristor(MCT) incorporated into the voltage-source type single-ended load resonant inverter for induction-heating rice cookers used for consumer power electronic applications, in which the output power can be regulated on the basis of Frequency Modulation Scheme.

• Proceedings of the KIPE Conference
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• 1998.10a
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• pp.859-864
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• 1998

Compact and small size, reliable and failsafe operation and low cost featuring fault current limiter causing the designer to take a close look into the use of passive fault current limiter(FCL) for the protection of power semiconductor devices in power electronic systems. This paper has identified the main parameters responsible for the development of ideal passive magnetic current limiter. The effect of those parameters on the range of operation and the voltage-current characteristics of the magnetic current limiter has been studied using tableau approach. Desirable characteristics are discussed and the simulation results are presented.

• International Journal of Aeronautical and Space Sciences
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• v.5 no.2
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• pp.28-34
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• 2004

One of the major problem encountered in nuclear plants and satellites design isEMI (Electro-Magnetic Interference) and EMC (Electro-Magnetic Compatibility).Here, our focus is to implement the test board for checking SEU (Single EventUpsets); the effects of protons on the electronic system. The SEU results from thelevel change of stored information due to photon radiation and temperature in thespace environment. The impact of SEU on PLD (Programmable Logic Devices)technology is most apparent in ROM/SRAM/DRAM devices wherein the state ofstorage cell can be upset. In this paper, a simple and powerful test techniques issuggested, and the results are presented for the analysis and future reference. In ourexperiment, the proton radiation facilitv (having the energy of 50 MeV with a beamcurrent of 60 uA of cyclotron) available at KIRAMS (Korea Institute of RadiologicalMedical Sciences) has been applied on a commercially available SRAM manufacturedby Hynix Semiconductor Company.

• Design & Manufacturing
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• v.12 no.1
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• pp.47-51
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• 2018

As the IT industry rapidly progresses, the functions of electronic devices and display devices are integrated with high density, and the model is changed in a short period of time. To implement the integration technology, a uniform micro-pattern implementation technique to drive and control the product is required. The most important technology for the micro pattern generation is the exposure processing technology. Failure to implement the basic pattern in this process cannot satisfy the demands in the manufacturing field. In addition, the conventional exposure method of the mask method cannot cope with the small-scale production of various types of products, and it is not possible to implement a micro-pattern, so an alternative technology must be secured. In this study, the technology to implement the required micro-pattern in semiconductor processing is presented through the photolithography process and plasma etching.

• Journal of Sensor Science and Technology
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• v.22 no.2
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• pp.100-104
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• 2013

A superhydrophobic mesh is a unique structure that blocks water, while allowing gases, sound waves, and energy to pass through the holes in the mesh. This mesh is used in various devices, such as gas- and energy-permeable waterproof membranes for underwater sensors and electronic devices. However, it is difficult to fabricate micro- and nano-structures on three-dimensional surfaces, such as the cylindrical surface of a wire mesh. In this research, we successfully produced a superhydrophobic water-repellent mesh with a high contact angle (> $150^{\circ}$) for nanofibrous structures. Conducting polymer (CP) composite nanofibers were evenly coated on a stainless steel mesh surface, to create a superhydrophobic mesh with a pore size of $100{\mu}m$. The nanofiber structure could be controlled by the deposition time. As the deposition time increased, a high-density, hierarchical nanofiber structure was deposited on the mesh. The mesh surface was then coated with Teflon, to reduce the surface energy. The fabricated mesh had a static water contact angle of $163^{\circ}$, and a water-pressure resistance of 1.92 kPa.