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NANOCAD Framework for Simulation of Quantum Effects in Nanoscale MOSFET Devices  

Jin, Seong-Hoon (School of Electrical Engineering and Computer Science and Nano Systems Institute-NCRC, Seoul National University)
Park, Chan-Hyeong (Department of Electronics and Communications Engineering, Kwangwoon University)
Chung, In-Young (Department of Electronic Engineering, Gyeongsang National University)
Park, Young-June (School of Electrical Engineering and Computer Science and Nano Systems Institute-NCRC, Seoul National University)
Min, Hong-Shick (School of Electrical Engineering and Computer Science and Nano Systems Institute-NCRC, Seoul National University)
Publication Information
JSTS:Journal of Semiconductor Technology and Science / v.6, no.1, 2006 , pp. 1-9 More about this Journal
Abstract
We introduce our in-house program, NANOCAD, for the modeling and simulation of carrier transport in nanoscale MOSFET devices including quantum-mechanical effects, which implements two kinds of modeling approaches: the top-down approach based on the macroscopic quantum correction model and the bottom-up approach based on the microscopic non-equilibrium Green’s function formalism. We briefly review these two approaches and show their applications to the nanoscale bulk MOSFET device and silicon nanowire transistor, respectively.
Keywords
MOSFET; quantum effect; density-gradient model; non-equilibrium Green’s function (NEGF) formalism;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
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