• Title/Summary/Keyword: Electronic devices

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The Analysis of The Three Phase Rectifier (다중 3상 PWM 정류기의 해석)

  • Shin, D.H.;Youn, K.S.;Cho, J.G.;Kwon, W.H.
    • Proceedings of the KIEE Conference
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    • 1995.11a
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    • pp.242-245
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    • 1995
  • In this paper the multiple three rectifiers for the power factor correction are proposed, analyzed and designed. The multiple three phase rectifiers draw sinusoidal ac currents from the ac voltage sources with nearly unity input power factor and operate with PWM making the control circuit simple and system cost low. Outstandingly it reduces the rated power capacity of devices and the input filter size by reducing input current ripples. Moreover design rules can be obtained from input and output current equations. With the proposed rules, input power factor and output power capacity are determined approximately. Finally these design rules are verified with computer simulations.

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Object-Based Fault Diagnosis Expert System (객체 기반 고장 진단 전문가 시스템)

  • Kwon, Kyung-Bong;Kim, Jung-Nyun;Baek, Young-Sik
    • Proceedings of the KIEE Conference
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    • 1997.11a
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    • pp.190-192
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    • 1997
  • In this paper we developed an object-based expert system for electric power system fault diagnosis. The object corresponds to a hardware or event in real world and they are independent each other. The expert system is designed to estimate the fault sections and identify the false operation, nonoperation of protective devices. The expert system was developed using C++ language in pentium PC. We applied the expert system in various sample systems and showed that making up a knowledge base is easier and diagnosis was done in a approximately real time.

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Current Characteristics in the Silicon Oxides (실리콘 산화막의 전류 특성)

  • Kang, C.S.;Lee, Jae Hak
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.29 no.10
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    • pp.595-600
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    • 2016
  • In this paper, the oxide currents of thin silicon oxides is investigated. The oxide currents associated with the on time of applied voltage were used to measure the distribution of voltage stress induced traps in thin silicon oxide films. The stress induced leakage currents were due to the charging and discharging of traps generated by stress voltage in the silicon oxides. The stress induced leakage current will affect data retention in memory devices. The oxide current for the thickness dependence of stress current and stress induced leakage currents has been measured in oxides with thicknesses between $109{\AA}$, $190{\AA}$, $387{\AA}$, and $818{\AA}$ which have the gate area $10^{-3}cm^2$. The oxide currents will affect data retention and the stress current, stress induced leakage current is used to estimate to fundamental limitations on oxide thicknesses.

Semi-lumped Balun Transformer using Coupled LC Resonators

  • Park, Jongcheol;Yoon, Minkyu;Park, Jae Yeong
    • Journal of Electrical Engineering and Technology
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    • v.10 no.3
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    • pp.1154-1161
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    • 2015
  • This paper presents a semi-lumped balun transformer using conventional PCB process and its design theory and geometry for the maximally flat response and wide bandwidth using magnetically coupled LC resonators. The proposed balun is comprised of two pairs of coupled resonators which share one among three LC resonators. It provides an identical magnitude and phase difference of 180° between two balanced ports with DC isolation and an impedance transformation characteristic. Theoretical design and analysis were performed to optimize the inductance and capacitance values of proposed balun device for obtaining the wide bandwidth and maximally flat response in its pass-band. Three balun transformers with a center frequency of 500 MHz were demonstrated for proving the concept of design proposed. They were fabricated by using lumped chip capacitors and planar inductors embedded into a conventional 4-layered PCB substrate. They exhibited a maximum magnitude difference of 0.8 dB and phase difference within 2.4 degrees.

Half-Bridge Resonant Converter with Coreless Isolation Transformer (공심 절연변압기를 구비한 반브릿지 공진형 컨버터)

  • Heo, Joon;Jeon, Seong-Jeub
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.66 no.4
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    • pp.636-642
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    • 2017
  • Recently, new power devices, SiC and GaN FETs, are commercialized. They are expected to change power electronics environments. They will raise operating frequencies of power electronic equipments. Accordingly, design method will be changed greatly. In this paper, an 1 MHz resonant converter with fully compensated coreless isolation transformer is proposed, where the primary voltage is proportional to the secondary current and the primary current to the secondary voltage. 30 W prototype is constructed and tested, and its usefulness is verified.

GTM : Trace Monitoring of Mobile Devices based on GML (GTM : GML 기반 이동 단말 추적 모니터링)

  • Jeon, Chang-Young;Song, Eun-Ha;Jeong, Young-Sik
    • Annual Conference of KIPS
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    • 2005.11a
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    • pp.1137-1140
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    • 2005
  • 기존의 방대한 무선 인프라와 최근 이동 단말기의 발달로 무선통신 기술을 이용한 서비스 이용이 잦아졌으며, 이를 관리하기 위해 기존의 모니터링 시스템들은 표준화되지 않은 지리 정보 속성을 바탕으로 단일 이동 단말기에서만 적용 되었다. 따라서 표준화된 GIS(Geographic Information System)에서 이동하는 여러 개의 무선 시스템을 효율적으로 관리하며 제어 할 수 있는 시스템이 필요하게 되었다. 본 논문은 WIPI(Wireless Internet Platform for Interoperability)에서 제공되는 GML(Geography Markup Language) 위치 정보 시스템을 서버에서 통합 추적 할 수 있는 모니터링 시스템을 설계한다. 또한 이 시스템은 OGC(Open GIS Consortium)에서 제안한 GML 3.1을 기반으로, 여러 WIPI 사용자들의 공간 정보를 획득 및 저장하여 이를 추적 관리 할 수 있다.

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Low-Power DCT Architecture by Minimizing Switching Activity (스위칭 엑티비티를 최소화한 저전력 DCT 아키텍쳐 구현)

  • Kim, San;Park, Jong-Su;Lee, Yong-Surk
    • Annual Conference of KIPS
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    • 2005.05a
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    • pp.863-866
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    • 2005
  • Low-power design is one of the most important challenges encountered in maximizing battery life in portable devices as well as saving energy during system operation. In this paper we propose a low-power DCT (Discrete Cosine Transform) architecture using a modified Computation Sharing Multiplication (CSHM). The overall rate of power consume is reduced during DCT: the proposed architecture does not perform arithmetic operations on unnecessary bits during the Computation Sharing Multiplication calculations. Experimental results show that it is possible to reduce power dissipation up to about $7{\sim}8%$ without compromising the final DCT results. The proposed lowpower DCT architecture can be applied to consumer electronics as well as portable multimedia systems requiring high throughput and low-power.

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Effect of Bias Voltage of Influenced on a Property of Electrical and Optical of ZnO:Al (ZnO:Al 박막의 전기적, 광학적 특성에 미치는 바이어스 전압효과)

  • Na, Young-il;Lee, Jae-Hyeong;Lim, Dong-Gun;Yang, Kea-Joon
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.18 no.6
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    • pp.493-498
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    • 2005
  • Al doped Zinc Oxide, which is widely used as a transparent conductor in opto-electronic devices. In this paper, we find that the lateral variations of the parameters of the ZnO:Al films prepared by the rf magnetron sputtering can be reduced to acceptable levels by optimising the deposition parameters. The effect of bias voltage on the electrical, optical and morphological properties were investigated experimentally. we investigated sample properties of Bias Voltage change in 0 to 50 V.

Electrical Characterization of Electronic Materials Using FIB-assisted Nanomanipulators

  • Roh, Jae-Hong;You, Yil-Hwan;Ahn, Jae-Pyeong;Hwang, Jinha
    • Applied Microscopy
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    • v.42 no.4
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    • pp.223-227
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    • 2012
  • Focused Ion Beam (FIB) systems have incorporated versatile nanomanipulators with inherent sophisticated machining capability to characterize the electrical properties of highly miniature components of electronic devices. Carbon fibers were chosen as a model system to test the applicability of nanomanipulators to microscale electronic materials, with special emphasis on the direct current current-voltage characterizations in terms of electrode configuration. The presence of contact resistance affects the electrical characterization. This resistance originates from either i) the so-called "spreading resistance" due to the geometrical constriction near the electrode - material interface or ii) resistive surface layers. An appropriate electrode strategy is proposed herein for the use of FIB-based manipulators.

Graphene Field-effect Transistors on Flexible Substrates

  • So, Hye-Mi;Kwon, Jin-Hyeong;Chang, Won-Seok
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.578-578
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    • 2012
  • Graphene, a flat one-atom-thick two-dimensional layer of carbon atoms, is considered to be a promising candidate for nanoelectronics due to its exceptional electronic properties. Most of all, future nanoelectronics such as flexible displays and artificial electronic skins require low cost manufacturing process on flexible substrate to be integrated with high resolutions on large area. The solution based printing process can be applicable on plastic substrate at low temperature and also adequate for fabrication of electronics on large-area. The combination of printed electronics and graphene has allowed for the development of a variety of flexible electronic devices. As the first step of the study, we prepared the gate electrodes by printing onto the gate dielectric layer on PET substrate. We showed the performance of graphene field-effect transistor with electrohydrodynamic (EHD) inkjet-printed Ag gate electrodes.

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