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http://dx.doi.org/10.4313/JKEM.2005.18.6.493

Effect of Bias Voltage of Influenced on a Property of Electrical and Optical of ZnO:Al  

Na, Young-il (군산대학교 전자정보공학부)
Lee, Jae-Hyeong (군산대학교 전자정보공학부)
Lim, Dong-Gun (충주대학교 전자공학과)
Yang, Kea-Joon (충주대학교 전자공학과)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.18, no.6, 2005 , pp. 493-498 More about this Journal
Abstract
Al doped Zinc Oxide, which is widely used as a transparent conductor in opto-electronic devices. In this paper, we find that the lateral variations of the parameters of the ZnO:Al films prepared by the rf magnetron sputtering can be reduced to acceptable levels by optimising the deposition parameters. The effect of bias voltage on the electrical, optical and morphological properties were investigated experimentally. we investigated sample properties of Bias Voltage change in 0 to 50 V.
Keywords
RF magnetron sputtering; Transmittance; Hall effect; Bias voltage;
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