Browse > Article
http://dx.doi.org/10.5370/KIEE.2017.66.4.636

Half-Bridge Resonant Converter with Coreless Isolation Transformer  

Heo, Joon (Dept. of Electronic Engineering, Pukyong National University)
Jeon, Seong-Jeub (Dept. of Electronic Engineering, Pukyong National University)
Publication Information
The Transactions of The Korean Institute of Electrical Engineers / v.66, no.4, 2017 , pp. 636-642 More about this Journal
Abstract
Recently, new power devices, SiC and GaN FETs, are commercialized. They are expected to change power electronics environments. They will raise operating frequencies of power electronic equipments. Accordingly, design method will be changed greatly. In this paper, an 1 MHz resonant converter with fully compensated coreless isolation transformer is proposed, where the primary voltage is proportional to the secondary current and the primary current to the secondary voltage. 30 W prototype is constructed and tested, and its usefulness is verified.
Keywords
Full compensation; Resonance converter; Isolation transformer; Coreless transformer; GaN FET;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
연도 인용수 순위
1 J. W. Milligan, S. Sheppard, W. Pribble, Y.-F. Wu, G. Muller and J.W. Palmour, "SiC and GaN wide bandgap device technology overview", IEEE Radar conference record, pp. 960-964, 2007.
2 J. Heo and S.-J. Jeon, "Resonant Converter with Fully-Compensated Isolation Transformer", Proc. of EECSS 2016, pp. 1-6, 2016.
3 A. Wakejima, K Matsunaga, Y. Okamoto, Y. Ando, T. Nakayami, and H. Miyamoto, "370W output power GaNFET amplifier for W-CDMA cellular base stations", Electronics Letters, vol. 41, no. 25, pp. 1371-1372, 2005.   DOI
4 Y. Li, T.JQ Zheng, Y. Zhang, M. Cui, Y. Han, and W. Dou, "Loss analysis and soft-switching behaviour of flyback-forward high gain DC/DC converters with a GaN FET", Journal of Power Electronics. vol. 16, no. 1, pp. 84-92, 2016   DOI
5 J. A. Sabate, V. Vlatkovic, R. B. Ridley, F. C. Lee, and B. H. Cho, "Design consideration for high-voltage highpower full-bridge zero-voltage switched PWM converter", Proc. IEEE Appl. Power Electron. Conf., pp. 275-284, 1990.
6 Texas Instrument, "LMG 5200 80V, 10A GaN Half-bridge power stage", TI datasheet, 2017
7 J. G. Cho, G. H. Rim, and F. C. Lee, "Zero-voltage and zero-current switching full bridge PWM converter using secondary active clamp", Proc. IEEE Power Electron. Spec. Conf., pp. 657-663, 1996.
8 S.-J. Jeon and G.H. Cho, "A zero-voltage and zerocurrent switching full bridge DC-DC converter with transformer isolation", IEEE Trans. Power Electronics, vol. 16, no. 5, pp. 573-580, 2001   DOI
9 R. L. Steigerwald, "Analysis and Design of High- Frequency Isolated Dual-Bridge Series Resonant DC/DC Converter", IEEE Trans. Power Electronics, vol. 25, no. 4, pp. 850-862, 2010.   DOI
10 R. L. Steigerwald, "A comparison of half-bridge resonant converter topologies", IEEE Trans. Power Electronics, vol. 3, no. 2, pp. 174-182, 1988.   DOI
11 M.N.O. Sadiku, S. M. Musa and C. K. Alexander, "Applied Circuit Analysis", McGraw Hill, 2013.