• The Journal of Korean Institute of Communications and Information Sciences
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• v.40 no.5
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• pp.931-937
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• 2015

Distributed relay scheme for wireless ad hoc multi-hop multicast network composed of low-power and low-complexity wireless devices with high density is proposed. The proposed relay scheme is shown to be better than flooding, which is the distributed relay scheme applied to ZigBee, in the outage probability and the multicast transmission rate by simulations.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.601-604
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• 1999

Electroluminescence(EL) devices based on organic thin films have attracted lots of interests in large-area light-emitting display. Recently, many EL researcher have interested a new emissive organic material. In this study, light-emitting organic electroluminescent devices were fabricated using Langmuir-Blodgett(LB) technique with new emissive organic material. This new emissive organic material were synthesis by our teams and we called PECCP [poly(3,6-N-2ethylhexyl carbazoly cyanoterephthalidene)] which has strong electron donor group and electron acceptor group in main chain repeat unit. This material has good solubility in common organic solvent such as chloroform. THF, etc. and has a good stability in air. In here, the new emissive material is applied to Langmuir-Blodgett(LB) method because our new material has a good stability in air. Optimum conditions of film deposition were examined by a surface pressure-area( $\pi$ -A) isotherms with various factors. The LB film were deposited on a indium Tin Oxide(ITO) glass. We were investigated by measuring current-voltage(I-V) characteristics. Also we were measured the UV/visible absorption at about 410nm and PL spectrum at about 530nm. We are attempt to the electroluminescence device properties of the new emissive material by Langmuir-Blodgett(LB) technique.

• Transactions on Electrical and Electronic Materials
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• v.12 no.4
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• pp.131-134
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• 2011

Back-end-of-line using ultra low-k (ULK; k < 2.5) has been required to reduce resistive capacitance beyond 45 nmtechnologies, because micro-processing units need higher speed and density. There are two strategies to manufacture ULK inter-layer dielectric (ILD) materials using an air-gap (k = 1). The former ULK and calcinations of ILD degrade the mechanical strength and induce a high cost due to the complication of following process, such as chemical mechanical polishing and deposition of the barrier metal. In contrast, the air-gap based low-k ILD with a relatively higher density has been researched on the trench-type with activity, but it has limited application to high density devices due to its high air-gap into the next metal layer. The height of air-gap into the next metal layer was reduced by changing to the via-typed air-gap, up to about 50% compared to that of the trench-typed air-gap. The controllable ULK was easily fabricated using the via-typed air-gap. It is thought that the via-type air-gap made the better design margin like via-patterning in the area with the dense and narrow lines.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.9
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• pp.776-780
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• 2009

In this study, the opto-electric properties of EL devices with PMN dielectric layer with variation of firing tempereature were investigated. For the PMN dielectric layer process, the paste was prepared by optimization of quantitative mixing of PMN powder, $BaTiO_3$, Glass Frit, $\alpha$-Terpineol and ethyl cellulose. The EL device stack consists of Alumina substrate ($Al_2O_3$), metallic electrode (Au), insulating layer (manufactured PMN paste), phosphor layer (ELPP- 030, ELK) and transparent electrode (ITO), which is well structure as a thick film EL device. The phase transformation properties of PMN dielectric with various firing temperatures of $150^{\circ}C$ to $850^{\circ}C$ was characterized by XRD. Also the opto-electric properties of EL devices with different firing temperature were investigated by LCR meter and spectrometer. We found the best opto-electric property was obtained at the condition of $550^{\circ}C$ firing which is 3432.96 $cd/m^2$ at 1948.3 pF Capacitance, 40 kHz Frequency, 40% Duty, Vth+330 V voltage.

• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.7
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• pp.89-95
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• 2014

An LED lighting which adjusted brightness according to the surround ambient implemented using PWM technology and power devices. To measure the brightness of surround ambient a CdS sensor was used. A control board for the generation of the PWM signal was made using a MCU and duty ratio was controlled according to light intensity of surround ambient of the system. To drive the LED lamps which require high-voltage and high-current power devices were used for switching the DC power supply. Measurement results show that the IGBT is excellent as only lineality but the PowerBJT is more good to consider to efficiency and cost.

• Applied Science and Convergence Technology
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• v.23 no.2
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• pp.72-82
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• 2014

Lithium-ion batteries (LIBs) have become popular electrochemical devices. Due to the unique advantages of LIBs in terms of high operating voltage, high energy density, low self-discharge, and absence of memory effects, their application range, which was primarily restricted to portable electronic devices, is now being extended to high-power applications, such as electric vehicles (EVs) and hybrid electrical vehicles (HEVs). Among various anode materials, $Li_4Ti_5O_{12}$ (LTO) is believed to be a promising anode material for high-power LIBs due to its advantages of high working potential and outstanding cyclic stability. However, the rate performance of LTO is limited by its intrinsically low electronic conductivity and poor $Li^+$ ion diffusion coefficient. This review highlights the recent progress in improving the rate performance of LTO through doping, compositing, and nanostructuring strategies.

• KIEE International Transactions on Power Engineering
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• v.4A no.4
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• pp.236-242
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• 2004

Previous research results indicated that the designed current reduction device could effectively reduce the sheath circulating current and that its RDP protection device could shield it against both fault and lightning strokes. In this paper, cable impedance is analyzed using wavelet analysis and distance relay algorithm following the installation of these devices so that the operation of distance relay can be estimated. The test results confirm that in these devices, the fault inception angle and SVL bonding types have no impact on the change of cable impedance. In other words, the conventional distance relay can be used without a new relay setting. Thus we can finally assert that the designed current reduction device and its protection device are effective and can be safely installed on the cable transmission system without disturbance.

• The Journal of the Korea institute of electronic communication sciences
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• v.9 no.11
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• pp.1227-1232
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• 2014

This paper relates 10% shrink from $0.13{\mu}m$ design for core devices as well as input and output (I/O) devices different from previous poly length shrink size only. We analyzed body effect with different channel length and doping profile simulation. After fixing the gate oxide module process, LDD implant conditions were optimized such as decoupled plasma nitridation of gate oxide, TEOS oxide $100{\AA}$ before LDD implant and 22o tilt-angle(45o twist-angle) LDD implant respectively to match the spice DC parameters of pre-shrink and finally matched them within 5%.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.58 no.5
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• pp.994-998
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• 2009

Existing cooling technologies no longer provide adequate heat dissipation due to excessive heat generation caused by the growing component density on electronic devices. An ionic gas pump can be used for the thermal management of micro-electronic devices, since the size of pump can be reduced to a micrometer scale. In addition, the gas pump allows for gas flow control and generation without moving parts. This ideal property of gas pump gives rise to a variety of applications. However, all these applications require maximizing the wind velocity of gas pump. In this study a barrier discharge type gas pump, with a needle-shaped corona electrode instead of a plate-shaped corona electrode, has been investigated by focusing on the corona electrode shape on the wind velocity and wind generation yield. As a result, the enhanced wind velocity and wind generation yield of 1.76 and 3.37 times were obtained with the needle-shaped corona electrode as compared with the plate-shaped corona electrode of the proposed barrier discharge type gas pump.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.66 no.3
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• pp.540-544
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• 2017

In this study, we analyzed the effects of TID(Total Ionizing Dese) and TREE(Transient Radiation Effects on Electronics) on nMOSFET and pMOSFET fabricated by 0.18um CMOS process. The size of nMOSFET and pMOSFET is 100um/1um(W/L). The TID test was conducted up to 1 Mrad(Si) with a gamma-ray(Co-60). During the TID test, the nMOSFET generated leakage current proportional to the applied dose, but that of the pMOSFET was remained in a steady state. The TREE test was conducted at TEST LINAC in Pohang Accelerator Laboratory with a maximum dose-rate of $3.16{\times}10^8rad(si)/s$. In that test nMOESFET generated a large amount of photocurrent at a maximum of $3.16{\times}10^8rad(si)/s$. Whereas, pMOSFETs showed high TREE immunity with a little amount of photocurrent at the same dose rate. Based on the results of this experiment, we will progress the research of the radiation hardening for CMOS unit devices.