• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.3
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• pp.165-169
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• 2012

Power semiconductor devices are widely used as high voltage applications to inverters and motor drivers, etc. The blocking voltage is one of the most important parameters for power semiconductor devices. And cause of junction curvature effects, the breakdown voltage of the device edge and device unit cells was found to be lower than the 'ideal' breakdown voltage limited by the semi-infinite junction profile. In this paper, Propose the methods for field ring design by DOE (Design of Experimentation). So The field ring can be improve for breakdown voltage and optimization.

• Smart Media Journal
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• v.3 no.2
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• pp.14-19
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• 2014

This paper presents a novel approach to recognize human gestures using k-NN and DTW based on Con tactless Electronic Potential Sensor(CEPS) in the smart devices such as smart TV and smart-phone in the proposed method, we used a Kalman filter to remove noise on gesture signal from CEPS and a PCA algorithm is utilized for reducing the dimensionality of gesture signal without data losses. And then in order to categorize gesture signals, k-NN classifier with DTW distance measure is considered. In the experimental result, we evaluate recognition performance with CEPS gesutres signal form the above two types of smart devices, and we can successfully identify five different gestures with more than 90% of recognition accuracy.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.49 no.7
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• pp.1-5
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• 2012

At the present time when the limits of the magnetic storage systems appear, the holographic data storage (HDS) devices with high data transfer rate and high recording density are emerging as attractive candidates for next-generation optical storage devices. In this paper, to effectively improve the detection performance that is degraded by the two-dimensional inter-symbol interference under the HDS channel environment and the pixel misalignment, an iterative two-dimensional equalization scheme is proposed based on the contraction mapping theorem. In order to evaluate the performance of the proposed scheme, for various holographic channel environments we measure the BER performance using computer simulation and compare the proposed one with the conventional threshold detection scheme, which verifies the superiority of the proposed scheme.

• The Journal of the Korea institute of electronic communication sciences
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• v.4 no.4
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• pp.301-305
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• 2009

Pt nanoparticles with a narrow size distribution (dia. ~4 nm) were synthesized via an alcohol reduction method and used for the fabrication of hybrid Pt-$SiO_2$ nanoparticles. Also, the self-assembled monolayer of Pt nanoparticles (NPs) was studied as a charge trapping layer for non-volatile memory (NVM) applications. A metal-oxide-semiconductor (MOS) type memory device with Pt NPs exhibits a relatively large memory window. These results indicate that the self-assembled Pt NPs can be utilized for NVM devices. In addition, it was tried to show the control of thin-film thickness of hybrid Pt-$SiO_2$ nanoparticles indicating the possibility of much applications for the MOS type memory devices.

• Journal of the Korean Data and Information Science Society
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• v.22 no.4
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• pp.735-740
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• 2011

In recent, electronic devices were able to develop and focus for ultra-compact size, intelligence, multifunction and broadband. Their SMPS is realized to ultra-compact size, light weight, high efficiency, high reliability, low noises. The power module which can be used to supply DC output from a commercial power supply (85 to 265 VAC). A switching power supply can be made easily by adding simply external circuit, such as microcontroller, a relay, etc. It would be apply to mostly electronic devices, and fit the global project "Saving energy". But we need to statistical analysis for a quality and performance about a load and an output voltage in product.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.159-159
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• 2008

Indium-tin oxides (ITO) films have been widely used as transparent electrodes for optoelectronic devices such as organic light emitting diodes (OLEDs), photovoltaics, touch screen devices, and flat-paneldisplay. In particular, to improve hole injection efficiency in OLEDs, transparent electrodes should have high work-function besides their transparency and low resistivity. Nevertheless, few studies have been made on engineering the work function of ITO for use as an efficient anode. In this study, the effects of a wide range of Nb or Zn doping rate on the changes in work functions of ITO anode were investigated. The Nb or Zn doped ITO films were fabricated on glass substrates using combinatorial sputtering system which yields a linear composition spread of Nb or Zn concentration in ITO films in a controlled manner by co-sputtering two targets of ITO and Nb2O5 or ITO and ZnO. We have also examined the resistivity, transmittance, and other structural properties of the Nb or Zn-doped ITO films. Furthermore, OLEDs employing Nb or Zn-doped ITO anodes were fabricated and the device performances were investigated concerned with the work function changes.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.78-79
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• 2008

In this paper, poly 3C-SiC thin films were grown on $SiO_2$/Si by atmospheric pressure chemical vapor deposition (APCVD) using HMDS, $H_2$, and Ar gas at $1100^{\circ}C$ for 30 min, respectively. And then, palladium films were deposited on poly 3C-SiC by RF magnetron sputter. Thickness, uniformity, and quality of these samples were performed by SEM. Crystallinity and preferred orientationsof palladium were analyzed by XRD. And Pd/poly 3C-SiC schottky diodes were fabricated and characterized by current-voltage measurements. Its electric current density Js and barrier height voltage were measured as $2\times10^{-3}$ A/$cm^2$, 0.58 eV, respectively. And these devices operated about $350^{\circ}C$. From results, Pd/poly 3C-SiC devices are promising for high temperature hydrogen sensor and applications.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.8
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• pp.620-623
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• 2013

The carbon nanotube / poly-vinylidene fluoride (CNT/PVDF) composite films for the nano-generator devices were fabricated by spray coating method using the CNT/PVDF solution, which was prepared by adding PVDF pellets into the CNT dispersed N-Methyl-2-pyrroli-done (NMP) solution. The flexible CNT/PVDF composite films were investigated by the scanning electron microscopy, which revealed that the CNTs were uniformly dispersed in the PVDF matrix and thickness of the films was approximately $20{\mu}m$. Fourier transform infra-red spectra were used to investigate crystal structure of the as-spray-coated CNT/PVDF films, and we found that they revealed extremely large portion of the ${\beta}$ phase PVDF. The capacitance of the CNT/PVDF films increased by adding CNTs into the PVDF matrix, and finally saturated. However, the resistance didn't show any saturation effect in the CNT concentration range of 0~4 wt%. Finally, the resulting nano-generator devices revealed reasonable current output after given mechanical stress.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.4
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• pp.214-217
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• 2017

An IGBT (insulated gate bipolar transistor) device has an excellent current-conducting capability. It has been widely employed as a switching device to use in power supplies, converters, solar inverters, and household appliances or the like, designed to handle high power. The aim with IGBT is to meet the requirements for use in ideal power semiconductor devices with a high breakdown voltage, an on-state voltage drop, a high switching speed, and high reliability for power-device applications. In general, the concentration of the drift region decreases when the breakdown voltage increases, but the on-resistance and other characteristics should be reduced to improve the breakdown voltage and on-state voltage drop characteristics by optimizing the design and structure changes. In this paper, using the T-CAD, we designed the NPT-IGBT (non punch-through IGBT) and FS-IGBT (field stop IGBT) and analyzed the electrical characteristics of those devices. Our analysis of the electrical characteristics showed that the FS-IGBT was superior to the NPT-IGBT in terms of the on-state voltage drop.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2016.05a
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• pp.674-675
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• 2016

In this paper, we propose a manufacturing process model of Internet of Things devices using a Printed Circuit Board (PCB)-mounted RFID tag chip for reducing electronic wastes. Electrical and electronic products require a PCB surface mount and many examination. Also, conventional barcode systems cannot provide traceability management in PCB manufacturing before finishing Surface Mount Technology (SMT) process. The proposed process model does not require workers' attaching and detaching process unlike barcode systems. Also, RFID tag chip can record all the data in manufacturing steps. Thus, the number of connections to a database management system (DBMS) can be reduced.