• Proceedings of the KIEE Conference
• /
• 1999.07d
• /
• pp.1797-1799
• /
• 1999

In this paper, to implement the electrical equivalent modeling of powder electroluminescent device, capacitate equation of device was chosen. The conventional structure device which have dielectric and phosphor layer between electrodes, and the single emission structure device which means that dielectric and phosphor were mixed between electrodes, were investigated. As a result, It was possible to make the equation that is transferred capacitance to phosphor layer, and using measured brightness efficiency and conductivity of devices was calculated.

• Transactions on Electrical and Electronic Materials
• /
• v.7 no.1
• /
• pp.7-11
• /
• 2006

The changes of the electrical conductivity in chalcogenide amorphous semiconductors, $Ge_{1}Se_{1}Te_{2}$, have been studied. A phase change random access memory (PRAM) device without an access transistor is successfully fabricated with the $Ge_{1}Se_{1}Te_{2}$-phase-change resistor, which has much higher electrical resistivity than $Ge_{2}Sb_{2}Te_{5}$ and its electric resistivity can be varied by the factor of $10^5$ times, relating with the degree of crystallization. 100 nm thick $Ge_{1}Se_{1}Te_{2}$ thin film was formed by vacuum deposition at $1.5{\times}10^{-5}$ Torr. The static mode switching (DC test) is tested for the $100\;{\mu}m-sized$ $Ge_{1}Se_{1}Te_{2}$ PRAM device. In the first sweep, the amorphous $Ge_{1}Se_{1}Te_{2}$ thin film showed a high resistance state at low voltage region. However, when it reached to the threshold voltage, $V_{th}$, the electrical resistance of device was drastically reduced through the formation of an electrically conducting path. The pulsed mode switching of the $20{\mu}m-sized$ $Ge_{1}Se_{1}Te_{2}$ PRAM device showed that the reset of device was done with a 80 ns-8.6 V pulse and the set of device was done with a 200 ns-4.3 V pulse.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.35 no.1
• /
• pp.86-92
• /
• 2022

Despite otherwise advantageous properties, the performance and reliability of devices manufactured in β-Ga₂O₃ on semi-insulating Ga₂O₃ substrates may degrade because of poorly mitigated self-heating, which results from the low thermal conductivity of Ga₂O₃ substrates. In this work, we investigate and compare self-heating and device performance of β-Ga₂O₃ MESFETs on substrates of semi-insulating Ga₂O₃ and 4H-SiC. Electron mobility in β-Ga₂O₃ is negatively affected by increasing lattice temperature, which consequently also negatively influences device conductance. The superior thermal conductivity of 4H-SiC substrates resulted in reduced β-Ga₂O₃ lattice temperatures and, thus, mitigates MESFET drain current degradation. This, in turn, allows practically reduced device dimensions without deteriorating the performance and improved device reliability.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1995.05a
• /
• pp.124-128
• /
• 1995

We have fabricated the vacuum magnetic device with a lateral field emitter arrays constructed on n-Si wafer, and investigated its magnetic characteristics. The device is consited to tip-arrayed emitter. gate and split-anode, The fabricated vacuum magnetic device has showed a good linearity of magnetic field and a high sensitivity compared with the conventional semiconductor magnetic device.

• Proceedings of the KIEE Conference
• /
• 1998.11c
• /
• pp.807-809
• /
• 1998

We give pressure stimulation into organic thin films and detect the induced displacement current, In processing of a device manufacture, we can see the process is good from the change of a surface pressure for organic thin films and transfer ratio of area per molecule. The structure of manufactured device is Au/organic thin films(Kapton-Polyimide)/Au and I-V properties of the device is measured from 0(V) to +5(V). The maximum value of measured current is increased as the number of accumulated layers are decreased. The resistance for the number of accumulated layers, the energy density for an input voltage show desired results.

• Proceedings of the KIEE Conference
• /
• 2005.11a
• /
• pp.90-92
• /
• 2005

Lightning surge damages of low voltage equipments in building are increasing due to increase in electrical and communication networks in the information-oriented society. And electronic equipments contained electrical circuits with semiconductor are very weak against lightning surge. The surge protective devices for electronic circuit in electronic equipments and AC power lines are becoming more widely. To achieve effective method of surge protection, there are needs for correlation between lightning surge protective effect of electronic equipment and installation method of surge protective device. This paper describes as a result of experiments for correlation between lightning surge protective effect and installation of surge protective device and Earth Leakage Breaker.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2007.10a
• /
• pp.789-792
• /
• 2007

이 연구는 Sentaurus Device를 이용하여 여러 가지 캐리어 전송 모델에 대한 반도체의 구조적, 전기적, 열적 작용의 변화를 조절함으로써 공정과 설계를 보다 쉽게 개발하는데 도움이 되리라 본다. 즉, 여러 가지 캐리어 전송 모델들은 밀도구배 모델을 기반으로 확산작용과 유체역학, Monto Carlo 전송 모델로 각기 분류할 수 있다. 각각의 모델들은 필수적인 요소에 의존하여 서로 다른 형태로 나타내어 질 수 있다. 이 연구에서는 Sentaurus Device simulation을 통하여 여러 가지 형태의 캐리어 전송 모델의 변화를 시각적으로 관찰할 것이다.

• Journal of the Korean institute of surface engineering
• /
• v.49 no.2
• /
• pp.186-190
• /
• 2016

In this study, we fabricated the transparent photovoltaic device using 2-dimensional transition-metal dichalcogenides and investigated the transparency and photovoltaic characteristics. P-n heterojunction was formed by mechanical exfoliation and aligned transfer method on the transparent sheet using n-type $MoS_2$ and p-type $WSe_2$. Our transparent photovoltaic device exhibited the open-circuit voltage of ~ 0.15 V and the short-circuit current of 0.48 nA under illumination of white light.

• Korean Journal of Materials Research
• /
• v.23 no.10
• /
• pp.586-591
• /
• 2013

The printing of nanomaterials onto certain substrates is one of the key technologies behind high-speed interconnection and high-performance electronic devices. For the printing of next-generation electronic devices, a printing process which can be applied to a flexible substrate is needed. A printing process on a flexible substrate requires a lowtemperature, non-vacuum process due to the physical properties of the substrate. In this study, we obtained well-ordered Ag nanowires using modified gravure printing techniques. Ag nanowires are synthesized by a silver nitrate ($AgNO_3$) reduction process in an ethylene glycol solution. Ag nanowires were well aligned by hydrodynamic force on a micro-engraved Si substrate. With the three-dimensional structure of polydimethylsiloxane (PDMS), which has an inverse morphology relative to the micro-engraved Si substrate, the sub-micron alignment of Ag nanowires is possible. This technique can solve the performance problems associated with conventional organic materials. Also, given that this technique enables large-area printing, it has great applicability not only as a next-generation printing technology but also in a range of other fields.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.14 no.3
• /
• pp.241-245
• /
• 2001

In this paper, we present parameter optimization technique for GaAs/AlGaAs multiple quantum well avalanche photodiodes used for image capture mechanism in high-definition system. Even under flawless environment in semiconductor manufacturing process, random variation in process parameters can bring the fluctuation to device performance. The precise modeling for this variation is thus required for accurate prediction of device performance. The precise modeling for this variation is thus required for accurate prediction of device performance. This paper will first use experimental design and neural networks to model the nonlinear relationship between device process parameters and device performance parameters. The derived model was then put into genetic algorithms to acquire optimized device process parameters. From the optimized technique, we can predict device performance before high-volume manufacturign, and also increase production efficiency.