• Electrical & Electronic Materials
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• v.8 no.6
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• pp.708-714
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• 1995

We have discussed the buried-channel(BC) behavior through the subthreshold characteristics of submicron PMOSFET device fabricated with twin well CMOS process. In this paper, we have guessed the initial conditions of ion implantation using process simulation, obtained the subthreshold characteristics as a function of process parameter variation such as threshold adjusting ion implant dose($D_c$), channel length(L), gate oxide thickness($T_ox$) and junction depth of source/drain($X_j$) using device simulation. The buried channel behavior with these process prarameter variation were showed apparent difference. Also, the fabricated pMOSFET device having different channel length represented good S.S value and low leakage current with increasing drain voltage.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.170-173
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• 2003

In this paper, we proposed a new bulk LDMOS structure which can be used for RF application, and its fabrication steps were introduced. The simulated devices consist of three types: Bulk device, SLB(SOI Like Bulk), and SOI device. As a result of process and device simulation, we showed electrical characteristics, such as threshold voltage, subthreshold slope, DIBL(Drain Induced Barrier Lowering), off-state current, and breakdown voltage. In this simulation study, the lattice temperature model was adopted to see the device characteristics with lattice temperature during the operation. SLB device structure showed the best breakdown characteristics among the other structures. The breakdown voltage of SLB structure is about 9V, that of bulk is 7V, and that of SOI is 8V.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.3
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• pp.200-205
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• 2000

This paper describes the structure modeling and operation characteristics of MFMIS(metal-ferroelectric-metal-insulator-semiconductor) device using the Tsuprem4 which is a semiconductor device tool by Avanti. MFMIS device is being studied for nonvolatile memory application at various semiconductor laboratory but it is difficult to fabricate and analyze MFMIS devices using the semiconductor simulation tool: Tsuprem4, medici and etc. So the new library and new materials parameters for adjusting ferroelectric material and platinum electrodes in the tools are studied. In this paper structural model and operation characteristics of MFMIS devices are measured, which can be easily adopted to analysis of MFMIS device for nonvolatile memory device application.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.55-58
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• 2000

SiGe heterojuction bipolar transistors (HBT) have been studied and applied for advanced high speed integrated circuits. Device characteristics of SiGe HBT depending on the Ge profile of the transistor base region have been analysed using a device simulator, ATLAS/BLAZE. The models and parameters have been calibrated to the measured characteristics of the device, having a trapeziodal base profile, including the cut-off frequency of 45GHz and the dc current gain of 200. The Ge concentration which increases linearly, exponentially, or root-functionally from the emitter-base junction to the base-collector junction, has been tried to find out the influence on the device characteristics. The cut-off frequency and gain rather strongly depends on the exponential and root-functional Ge base profiles, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.129-130
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• 2005

The electrical stress has a major effect on the long-term reliability of the thyristor. Therefore, it is needed to analyze the relationship between reliability and stress. In this paper, we investigate the device failure mechanism which induced by the stress. And also investigate the effect of the thermal stress on the device failure and relationship between electrical and thermal stress. Two-dimensional process simulator ATHENA and device simulator ATLAS are used to analyze the failure mechanism of the device.

• International journal of advanced smart convergence
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• v.8 no.2
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• pp.227-236
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• 2019

In this study, we develop a Korotkoff sound based automatic blood pressure measurement device including sensor, hardware, and analysis algorithm. PVDF-based sensor pattern was developed to function as a vibration sensor to detect of Korotkoff sounds, and the film's output was connected to an impedance-matching circuit. An algorithm for determining starting and ending points of the Korotkoff sounds was established, and clinical data from subjects were acquired and analyzed to find the relationship between the values obtained by the auscultatory method and from the developed device. The results from 86 out of 90 systolic measurements and 84 out of 90 diastolic measurements indicate that the developed device pass the validation criteria of the international protocol. Correlation coefficients for the values obtained by the auscultatory method and from the developed device were 0.982 and 0.980 for systolic and diastolic blood pressure, respectively. Blood pressure measurements based on Korotkoff sound signals obtained by using the developed PVDF film-based sensor module are accurate and highly correlated with measurements obtained by the traditional auscultatory method.

• Archives of Plastic Surgery
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• v.50 no.2
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• pp.156-159
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• 2023

Breast implants whether used for cosmetic or reconstructive purposes can be placed in pockets either above or below the pectoralis major muscle, depending on clinical circumstances such as subcutaneous tissue volume, history of radiation, and patient preference. Likewise, cardiac implantable electronic devices (CIEDs) can be placed above or below the pectoralis major muscle. When a patient has both devices, knowledge of the pocket location is important for procedural planning and for durability of device placement and performance. Here, we report a patient who previously failed subcutaneous CIED placement due to incision manipulation with prior threatened device exposure requiring plane change to subpectoral pocket. Her course was complicated by submuscular migration of the CIED into her breast implant periprosthetic pocket. With subcutaneous plane change being inadvisable due to patient noncompliance, soft tissue support of subpectoral CIED placement with an acellular biologic matrix (ABM) was performed. Similar to soft tissue support used for breast implants, submuscular CIED neo-pocket creation with ABM was performed with durable CIED device positioning confirmed at 9 months postprocedure.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.2
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• pp.204-209
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• 2017

We have investigated a Mo/Au gate scheme for use in AlGaN/GaN-on-Si HFETs. AlGaN/GaN-on-Si HFETs were fabricated with Ni/Au or Mo/Au gates and their electrical characteristics were compared after thermal stress tests. While insignificant difference was observed in DC characteristics, the Mo/Au gate device exhibited lower on-resistance with superior pulsed characteristics in comparison with the Ni/Au gate device.

• Proceedings of the IEEK Conference
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• 2002.07b
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• pp.1327-1330
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• 2002

In this paper examines theoretical analysis of passive intermodulation and its methods of measurement and procedure. And based on the results of field measurement, it defines the reasons of passive intermodulation of base stations, suggests characteristics by device and methods of improvement to minimize the influence of a base station on passive intermodulation, and compares and analyzes the results of field measurement before and after the reasons are improved to secure the characteristics by device and the utility and adequacy of methods of improvement.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.62 no.11
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• pp.1566-1570
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• 2013

In this paper, we analyzed the electric characteristics of the OLEDs device of which anode ITO has been treated with the oxygen plasma. We fabricated the basic three-layer structure (ITO / AF / $Alq_3$ / $Cs_2CO_3$ / Al) device, analyzed how the oxygen plasma treatments of the ITO surface affects to the electrical characteristics of OLEDs. We also produced a four-layer structure device (ITO / AF / TPD / $Alq_3$ / $Cs_2CO_3$ / Al) with the oxygen plasma treatment. From the comparative analysis to the devices, we confirmed following results. The three-layer structure OLEDs device with oxygen plasma treatment has better characteristics than the device without the treatments; maximum luminance, luminous efficiency, and external quantum efficiency are improved approximately 151 [%], 126 [%], and 175[%], respectively. Also, the electric characteristics of the four-layer structure device with oxygen plasma treatment are improved comparing to the characteristics of the three-layer structure device with oxygen plasma treatment; maximum luminance, luminous efficiency, and external quantum efficiency are improved approximately 144 [%], 115 [%], and 124[%], respectively.