• Transactions on Electrical and Electronic Materials
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• v.6 no.1
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• pp.18-21
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• 2005

Monolayers of lipids on a water surface have attracted much interest as models of biological membranes, but also as precursors of multilayer systems promising many technical applications. Until now, many methodologies have been developed in order to gain a better understanding of the relationship between the structure and function of the monolayers. Maxwell displacement current (MDC) measurement has been employed to study the dielectric property of Langmuirfilms. MDC flowing across monolayers is analyzed using a rod-like molecular model. A linear relationship between the monolayer compression speed a and the molecular area Am. Compression speed a was about 30, 40, and 50 mm/min. Langmuir-Blodgett(LB) layers of Arachidic acid deposited by LB method were deposited onto slide glass as Y-type film. The structure of manufactured device is Aul Arachidic acid! AI, the number of accumulated layers are $9{\sim}21$. Also, we then examined of the Metal-Insulator-Metal(MIM) device by means of I-V. The I-V characteristics of the device are measured from -3 to+3 V. The insulation property of a thin film is better as the distance between electrodes is larger.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1497-1499
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• 2000

We give pressure stimulation into organic thin films and then manufacture a device under the accumulation condition that the state surface pressure is 30 [mN/m]. LB layers of Arac. acid deposited by LB method were deposited onto y-type silicon wafer as y-type film. In processing of a device manufacture. we can see the process is good from the change of a surface pressure for organic thin films and transfer ratio of area per molecule. The structure of manufactured device is Au/arachidic acid/Al. the number of accumulated layers are 9$\sim$21. Also. we then examined of the MIM device by means of I-V. The I-V characteristic of the device is measured from -3 to +3[V]. The insulation property of a thin film is better as the distance between electrodes is larger.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.400-403
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• 2003

Recently, the study on development of electrical and electronic device is done to get miniature, high degrees of integration and efficiency by using inorganic materials. the study of Langmuir-Boldgett(LB) method that uses organic materials because of the limitation for the ultra small size. In this paper, detected displacement current using PBLG and PBDG, deposition and observed the electrical characteristics to each 1, 3, 5, 7, 9 layers by LB method. Maximum value of change ratio of displacement current by the detected speed and temperature appeared almost lineally, could confirm that it are in comparison relation each other speed temperature and displacement current. The structure of manufactured device is MIM. Also, we then examined of the MIM device by means of I-V. The I-V characteristic of the device is measured from 0 to +2[V]. The insulation property of a thin film is better as the distance between electrodes is larger.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.245-246
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• 2006

방향성 규소강판을 tape-wound core 형태로 제작하여 $N_2$ gas 분위기에서 $760^{\circ}C$ 4 시간동안 열처리후 자기적 특성을 조사 하였다. 그 결과 1차, 2차 권선수가 85 turns 시료에서 보자력(Hc)과 포화자속밀도(Bs)는 최대값을 나타내었고, 보자력은 0.019Oe, 포화자속밀도는 1.92T 이었다. 현재 국내에서 생산되고 있는 방향성 규소강판의 자속밀도값 보다 더 우수한 값을 나타내었으며, 열화특성이 자기적 특성에 미치는 영향을 통해 고효율 방향성 규소강판 개발의 가능성을 확인하였다.

• Journal of the Optical Society of Korea
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• v.15 no.1
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• pp.44-51
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• 2011

In this paper, an easy-to-use measurement device for illumination distribution is developed. The device consists of a sensor array module, a control module, and a PC interface. The sensor array module incorporates CIE 1931 color sensors and the ARM-based 96 MHz microcontroller in the control module for measurement and data processing. The sensor array module contains 64 color sensors arranged in a $16{\times}4$ array. The sensitivity of the sensor array module can be adjusted depending on the illumination level to be measured. The measurement data and control signals are exchanged via USB 2.0 standard. To demonstrate the performance of the device, the illumination distribution is measured for colors of red, green, and blue and is graphically shown. The device can be used for measurement of the illumination distribution, design and adjustment of LED illumination.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.11
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• pp.27-33
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• 2011

Recently many display devices support the digital display interface as display market growth. DisplayPort is a next generation display interface at the PC, projector and high definition content applications in more widely used connection solution development. This paper implements multiple streams based on the behavior of the main link that is suitable for the display port v1.1a standard. The limit point of Displayport, interface between the Sink Device and Sink Device is also implemented. And two or more differential image data are enable to output the result through four Lanes stated in display port v1.1a, of two or more display devices without the addition of a separate Lane. The Multiple Video Streaming Controller is implemented with 6,222 ALUTs and 6,686 register, 999,424 of block memory bits synthesized using Quartus II at Altera Audio/Video Development board (Stratix II GX FPGA Chip).

• Transactions on Electrical and Electronic Materials
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• v.18 no.2
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• pp.70-73
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• 2017

We investigated n-i-p type single junction hydrogenated amorphous silicon oxide solar cells. These cells were without front surface texture or back reflector. Maximum power point efficiency of these cells showed that an optimized device structure is needed to get the best device output. This depends on the thickness and defect density ($N_d$) of the active layer. A typical 10% photovoltaic device conversion efficiency was obtained with a $N_d=8.86{\times}10^{15}cm^{-3}$ defect density and 630 nm active layer thickness. Our investigation suggests a correlation between defect density and active layer thickness to device efficiency. We found that amorphous silicon solar cell efficiency can be improved to well above 10%.

• Transactions on Electrical and Electronic Materials
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• v.12 no.2
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• pp.84-87
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• 2011

We fabricated phosphorescent organic light-emitting devices with a 1,1-bis[(di-4-tolylamino)phenyl]cyclohexane (TAPC) host layer. Two kinds of devices, one of ITO/TAPC/TAPC:FIrpic/TAZ/LiF/Al (device A) and one of ITO/TAPC:FIrpic/TAPC/TAZ/LiF/Al (device B), were prepared to investigate electrical and optical properties. Iridium(III) bis[(4,6-difluorophenyl)-pyridinato-N,$C^{2'}$]picolinate (FIrpic) and 3-(4-biphenylyl)-4-phenyl-5-(4-tert-butylphenyl)-1,2,4-triazole (TAZ) were used as a blue phosphorescent guest material and an electron transport layer, respectively. The TAPC layer in device B strongly contributes to whitish emission, higher driving voltage, and lower current efficiency characteristics compared with device A. The mechanisms of these electrical and optical characteristics of the devices were investigated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.14-17
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• 2000

The rise throughput and the stability in fabrication of device can be obtained by applying of CMP process to STI structure in 0.18um semiconductor device. To employ in STI CMP, the reverse moat process has been added thus the process became complex and the defects were seriously increased. Removal rates of each thin films in STi CMP was not equal hence the devices must to be effected, that is, the damage was occured in the device dimension in the case of excessive CMP process and the nitride film was remained on the device dimension in the case of insufficient CMP process than these defects affect the device characteristics. We studied the current sensing method in STI-CMP with the reverse moat pattern.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.6
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• pp.389-393
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• 2014

A thin metal-embedding Schottky device was fabricated for an efficient photoelectric device. Semitransparent thick of 10 nm metal layers were deposited by sputtering of Ag and Ni on a Si substrate. The (111) N-type Si wafers with one-side polished, 450~500 ${\mu}m$ and resistivity $1{\sim}20{\Omega}{\cdot}cm$ were used. High rectifying ratio about 100 from Ni-Schottky device was achieved. This design would provide an effective scheme for high-performing photoelectric devices.