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http://dx.doi.org/10.4313/JKEM.2014.27.6.389

N-type Si Schottky Junction Photoelectric Device Using Nickel and Silver  

Seo, Cheolwon (Department of Electrical Engineering, Incheon National University)
Hong, Seung-Hyouk (Department of Electrical Engineering, Incheon National University)
Yun, Ju-Hyung (Department of Electrical Engineering, Incheon National University)
Kim, Joondong (Department of Electrical Engineering, Incheon National University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.27, no.6, 2014 , pp. 389-393 More about this Journal
Abstract
A thin metal-embedding Schottky device was fabricated for an efficient photoelectric device. Semitransparent thick of 10 nm metal layers were deposited by sputtering of Ag and Ni on a Si substrate. The (111) N-type Si wafers with one-side polished, 450~500 ${\mu}m$ and resistivity $1{\sim}20{\Omega}{\cdot}cm$ were used. High rectifying ratio about 100 from Ni-Schottky device was achieved. This design would provide an effective scheme for high-performing photoelectric devices.
Keywords
Schottky junction; Photoelectric device; On/off ratio;
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