• Korean Journal of Metals and Materials
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• v.48 no.12
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• pp.1064-1069
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• 2010

Thin films have been used in a large variety of technological applications such as solar cells, optical memories, photolithographic masks, protective coatings, and electronic contacts. If thin films experience frequent temperature changes, thermal stresses are generated due to the difference in the coefficient of thermal expansion between the film and substrate. Thermal stresses may lead to damage or deformation in thin film used in electronic devices and micro-machined structures. Thus, knowledge of the thermomechanical properties of thin films, such as the coefficient of thermal expansion, is an important issue in determining the stability and reliability of the thin film devices. In this study, thermal cycling of Cu and Ag thin films with various microstructures was employed to assess the coefficient of thermal expansion of the films. The result revealed that the coefficient of thermal expansion (CTE) of the Cu and Ag thin films increased with an increasing grain size. However, the effect of film thickness on the CTE did not show a remarkable difference.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.4
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• pp.286-290
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• 2020

The formation of inorganic thin films in low-temperature solution processes is necessary for a wide range of commercial applications of organic electronic devices. Aluminum oxide thin films can be utilized as barrier films that prevent the deterioration of an electronic device due to moisture and oxygen in the air. In addition, they can be used as the gate insulating layers of a thin film transistor. In this study, aluminum oxide thin film were formed using two methods simultaneously, a thermal process and the DUV process, and the properties of the thin films were compared. The result of converting aluminum nitrate hydrate to aluminum oxide through a hybrid process using a thermal treatment and DUV was confirmed by XPS measurements. A film-based a-IGZO TFT was fabricated using the formed inorganic thin film as a gate insulating film to confirm its properties.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.2
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• pp.106-109
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• 2016

The YBaCuO superconducting bulks were prepared by the thermal diffusion process involving the peritectic reaction to investigate the effect on microstructure and superconductivity. All the diffused YBaCuO could be successively separated from superconducting 123 phase by applying the thermal diffusion process. Electromagnetic properties of treated and untreated YBaCuO superconductor were evaluated to investigate the pinning effect. It was confirmed experimentally that a large amount of magnetic flux was trapped in the thermal treated superconducting bulk than that in the untreated one, indicating that the pinning centers of magnetic flux are related closely to the occurrence mechanism of the magnetic effect.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.371-371
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• 2007

In this study, liquid crystal (LC) aligning capabilities for vertical alignment on the $CeO_x$ thin film by thermal evaporation method were investigated. Also, the control of pretilt angles and thermal stabilities of the NLC treated on $CeO_x$ thin film were investgated. The uniform LC alignment on the $CeO_x$ thin film surfaces and good thermal stabilities with thermal evaporation can be achieved. It is considerated that the LC alignment on the $CeO_x$ thin film by thermal evaporation is attributed to elastic interaction between LC molecules and micro-grooves at the $CeO_x$ thin film surface created by evaporation. In addition, it can be achieved the good electro-optical (EO) properties of the VA-LCD on $CeO_x$ thin film layer with oblique thermal evaporation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.7
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• pp.600-604
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• 2005

We studied that structural and optical properties of ZnO films depend on oxygen contents. ZnO films were deposited on Si (111) substrates at room temperature by rf sputtering system and the thickness of films was 100 nm. The ZnO films were annealed in thermal furnace for 2 h at 800 and $900^{\circ}C$ in $H_2O,\;N_2$, and air ambient gases to control oxygen contents. We used AES, PL, XRD, AFM. As our result, crystal quality and luminescence improved until O/Zn is 1. However, when O/Zn ratio Is larger than 1, the structural and optical properties were getting worse.

• Journal of Sensor Science and Technology
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• v.6 no.3
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• pp.237-244
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• 1997

A new planar-type microsensor, which had a platinum heater and a sensing layer on the same plane was fabricated on silicon substrate with stress-relieved PSG(phosphosilicate glass)/$Si_{3}N_{4}$(800nm/150nm) diaphragm. The proposed planar-type microsensor could be fabricated by simple silicon process using only 3 masks for photolithography process compared with 5 or 6 masks of the typical micro-gas sensor. The thermal properties of the microsensor from thermal simulation were compared with those of the fabricated microheater. Although there are some discrepancy between the simulation result and the result from the fabricated microheater, the thermal simulation by FEM was proved to be an useful method to evaluate the thermal properties of microheater. The sensing characteristics of the fabricated microsensor with the planar-type heater were investigated also.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.83-83
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• 2010

This study investigates the thermal and mechanical properties of insulation elements through mixing epoxy based micro- and nano particles. Regarding thermal properties, DSC and DMA were used to calculate crosslinking densities for various types of insulation elements. In a mechanical property of bending strength, shape and scale parameters were obtained using the Weibull plot. This study obtained the most excellent results of scale parameters, such as Vol 3.2%, in the bending strength of EMNCs.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.207-208
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• 2007

Recently, high performance microelectronic devices are designed in multi-layer structure in order to make dense wiring of metal conductors in compact size. Imprint lithography have received significant attention due to an alternative technology for photolithography on such devices. In this work, we synthesized dielectric composite materials based on epoxy resin, and investigated their thermal stabilities and dynamic mechanical properties for thermal imprint lithography. In order to enhance the mechanical properties and toughness of dielectric material, various modified polyetherimide(PEI) was applied in the resin system. Curing behaviours, thermal stabilities, and dynamic mechanical properties of the dielectric materials cured with various conditions were studied using dynamic differential scanning calorimetry (DSC), thermo gravimetric analysis (TGA), and Universal Test Method (INSTRON).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.33-34
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• 2008

$Ge_1Se_1Te_2$ chalcogenide amorphous materials was prepared by the conventional melt-quenching method. Samples were prepared by e-beam evaporator system and thermal evaporator technique. The thermal properties were investigated in the temperature range 300K-400K and the electrical properties were studied in the voltage range from 0V to 3V below the corresponding glass trasition temperature. The obtained results agree with the electrothermal model for Phase-Change Random Access Memory.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.57-60
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• 2000

In this paper, study on the properties of the thermal degradated epoxy resin which is used in indoor insulation apparatus is performed to investigate the problems of the decreasing insulation characteristics and crack in the indoor insulation apparatus. As a parameter of variation, SEM, contact angle, surface resistivity, relative dielectric constant and weight loss are measured. As the results of the above measurements, the contact angle and surface resistivity of the epoxy resin has increased to 200$^{\circ}C$ in but at the above 200$^{\circ}C$ the values have decreased. The relative dielectric constants the thermal treated samples have increased on with the temperature increase. We find the volatile components of the epoxy resin compound has disappeared during thermal degradation by SEM. The insulation properties of the epoxy resin have increased by the 200$^{\circ}C$ but decreased in the above 200$^{\circ}C$.