• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.3
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• pp.208-212
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• 2015

This study will design the structural optimization of 21 W LED heat sink using the thermal conductive plastic materials. The thermal conductive plastic heat sink is inferior to aluminum heat sinks in thermal properties. This study will solve this problem using formability of thermal conductive plastic heat sink. A heat sink was optimized in terms of the number, and the thickness of fins and the base thickness of the heat sink, using the Heatsinkdesigner software. Also by using SolidWorks Flow simulation and thermal analysis software, the thermal characteristics of the heat sink were analyzed. As the result, the optimized heat sink has 17 fins, which are 1.5 mm thick and a 3.7 mm-thick base. The highest and the lowest temperature were $51.65^{\circ}C$ and $46.24^{\circ}C$ respectively. Based on these results, The thermal conductive plastic heat sink is considered possible to overcome heating problem when designing in complex structure.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.2
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• pp.152-155
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• 2011

Even though nano-scale materials were very advantageous for various applications, there are still problems to be solved such as the stabilization of surface state and realization of low contact resistances between a semiconducting nanowire and electrodes in nano-electronics. It is well known that the effects of contacts barrier between nano-channel and metal electrodes were dominant in carrier transportation in individual nano-electronics. In this report, it was investigated the electrical properties of GaN nanorod devices after chemical etching and rapid thermal annealing for making good contacts. After KOH wet-etching of the contact area the devices showed better electrical performance compared with non-treated GaN individual devices but still didn't have linear voltage-current characteristics. The shape of voltage-current properties of GaN devices were improved remarkably after rapid thermal annealing as showing Ohmic behaviors with further bigger conductivities. Even though chemical etching of the nanorod surfaces could cause scattering of carriers, in here it was shown that the most important and dominant factor in carrier transport of nano-electronics was realization of low contact barrier between nano-channel and metal electrodes surely.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.1
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• pp.100-106
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• 2006

Today, restricted energy sources, environmental considerations and the high cost of transporting fuel have limited the number and location of available power plant sites. The pressures resulting from these conditions have tended to require the construction of long, high-capacity, high-voltage power lines. it's used to adapt to STACIR/AW(Super Thermal-resistant Aluminum alloy Conductors, aluminum-clad Invar-Reinforced) conductor for coping with these situations. STACIR/AW conductor was formed by the combination of INVAR/AW as the core for low sag and super thermal-resistant aluminum alloy conductor for current capacity increase. increase of temperature by current capacity and long span lines make the susceptible to the deterioration of thermo-mechanical properties(conductivity, tensile strength, E-modulus and twist property et al). In the present work, changes of thermo-mechanical properties with aging have been studied in STACIR/AW $410 mm^2$ conductor with forms of single wire and strand wire.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.915-915
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• 2006

• Journal of the korean Society of Automotive Engineers
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• v.13 no.2
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• pp.88-102
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• 1991

In this study, thermophysical properties of the ceramic dielectrics such as BaOTiO$_{2}$, SrOTiO$_{2}$, MgOTiO$_{2}$, were measured by a single rectangular pulse heating method. The values of thermal diffusivities, specific heats, and thermal conductivities were measured as a function of temperature range from room temperature to 1300k. The measured thermal properties of one group of ceramic material were compared with those of other group and discussed in detail in connection with the chemical composition. Thus, some criteria for thermal design with the electric-electronic ceramic material were proposed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.7
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• pp.443-449
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• 2018

We investigated the temperature-dependent photoluminescence spectroscopy of colloidal InZnP/ZnSe/ZnS (core/shell/shell) quantum dots with varying ZnSe and ZnS shell thickness in the 278~363 K temperature range. Temperature-dependent photoluminescence of the InZnP-based quantum dot samples reveal red-shifting of the photoluminescence peaks, thermal quenching of photoluminescence, and broadening of bandwidth with increasing temperature. The degree of band-gap shifting and line broadening as a function of temperature is affected little by shell composition and thickness. However, the thermal quenching of the photoluminescence is strongly dependent on the shell components. The irreversible photoluminescence quenching behavior is dominant for thin-shell-deposited InZnP quantum dots, whereas thick-shelled InZnP quantum dots exhibit superior thermal stability of the photoluminescence intensity.

• Korean Journal of Materials Research
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• v.26 no.4
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• pp.182-186
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• 2016

Zircon, having excellent thermal, chemical, and mechanical properties, is utilized in refractory materials, electronic materials, chemical machines, structural materials, etc. However, zircon generally shows thermal dissociation to zirconia($ZrO_2$) and silica($SiO_2$) around the sintering temperature of $1540^{\circ}C$, and when zircon particles are small and impurities are present, thermal dissociation is known to occur at around $1100^{\circ}C$. This reduces the mechanical properties of $ZrSiO_4$. In this research, the effect of adding $SiO_2$ and 3Y-TZP to $ZrSiO_4$ has been studied in order to suppress dissociation and improve the mechanical properties. Addition of $SiO_2$ suppressed the dissociation of $ZrSiO_4$ at lower temperatures. It also enabled optimum packing between the particles, resulting in a dense microstructure and good mechanical properties. When 3Y-TZP was added, recombination with the dissociated $SiO_2$ resulted in good mechanical properties by suppressing the generation of pores and the densification of the microstructure.

• Korean Journal of Metals and Materials
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• v.47 no.8
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• pp.500-507
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• 2009

Pb-free solder has recently been used in electronics in efforts to meet environmental regulations, and a number of Pb-free solder alloy choices beyond the near-eutectic SnAgCu solder are now available. With increased demand for thin and portable electronics, the high cost of alloys containing significant amounts of silver and their poor mechanical shock performance have spurred the development of low Ag SnAgCu solder, which provides improved mechanical performance at a reasonable cost. Although low Ag SnAgCu solder exhibits significantly higher fracture resistance under high-strain rates, little thermal fatigue data exist for this solder. Therefore, it is necessary to investigate thermal fatigue reliability of low Ag SnAgCu solder under variation of thermal stress in order to allow its implementation in electronic products with high reliability requirements. In this study, the reliability of Sn0.3Ag0.7Cu(SAC0307), a low Ag solder alloy, is discussed and compared with that of Sn3Ag0.5Cu(SAC305). Three sample types and six samples size are evaluated. Mechanical properties and microstructure of the solder joint are investigated under thermal shock cycles. It was observed that the mechanical strength of SAC0307 dropped slightly with thermal cycling relative to that of SAC305. This reveals that the failure mode of SAC0307 is different from that SAC305 under this critical condition.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.81-84
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• 2004

The NiCr is an important material for present thin-film resistor application owing to its low TCR and thermal stability. In this work, the NiCr thin films were deposited on coming glass substrate by reactive magnetron sputtering and the annealing at temperatures range from 300 to $500^{\circ}C$ for 20 min in vacuum. X-ray, AFM, $R_s$(surface leakage current) have been used to study the structural and electrical properties of the NiCr thin films. The high precision NiCr thin films resistor with TCR(temperature coefficient of resistance) of less then $10\;ppm/^{\circ}C$ was obtained under in in-situ annealing at $300^{\circ}C$ on Cr buffer layer substrate. It is clear that the NiCr thin-films resistor electrical properties are low TCR related with it's annealing and buffer layer condition. NiCr thin film resistor having a good thermal stability and low TCR properties are expected for the application to the dielectric material of passive component.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.500-501
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• 2005

Aluminum doped zinc oxide films (ZnO:Al) were deposited on glass substrate by DC magnetron sputtering from a ZnO target mixed with 2 wt% $Al_2O_3$. The effects of substrate bias on the electrical properties and film structure were studied. Films deposited with positive bias have been annealed at $600^{\circ}C$ using rapid thermal anneal (RTA) process. The effects of RTA on the evolution of film microstructure are to be also studied using X-ray diffraction, transmission electron microscopy, and atomic force microscopy. Positive bias sputtering may induce lattice defects caused by electron bombardments during deposition. The as-deposited film microstructure evolves from the film with high defect density to more stable film condition. The electrical properties of the films after RTA process were also studied and the results were correlated with the evolution of film microstructures.