Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Effects of rapid thermal annealing and bias sputtering on the structure and properties of ZnO:Al films deposited by DC magnetron sputtering

Bias를 인가한 DC magnetron sputtering 법으로 증착된 ZnO:Al 박막의 구조적 특성과 RTP의 annealing에 따른 영향

  • 박경석 (경성대학교 신소재공학과) ;
  • 이규석 (경성대학교 전기전자공학과) ;
  • 이성욱 (경성대학교 전기전자공학과) ;
  • 박민우 (경성대학교 신소재공학과) ;
  • 곽동주 (경성대학교 전기전자공학과) ;
  • 임동건 (충주대학교 전자공학과)
  • Published : 2005.07.07
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Abstract

Aluminum doped zinc oxide films (ZnO:Al) were deposited on glass substrate by DC magnetron sputtering from a ZnO target mixed with 2 wt% $Al_2O_3$. The effects of substrate bias on the electrical properties and film structure were studied. Films deposited with positive bias have been annealed at $600^{\circ}C$ using rapid thermal anneal (RTA) process. The effects of RTA on the evolution of film microstructure are to be also studied using X-ray diffraction, transmission electron microscopy, and atomic force microscopy. Positive bias sputtering may induce lattice defects caused by electron bombardments during deposition. The as-deposited film microstructure evolves from the film with high defect density to more stable film condition. The electrical properties of the films after RTA process were also studied and the results were correlated with the evolution of film microstructures.

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