• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1996년도 춘계학술대회 논문집
• /
• pp.206-210
• /
• 1996

In order to investigate the electrical properties for transformer oils which contains a Pure sodium chloride, the dielectric properties is made researches. To measure the dielectric loss of specimen, a coaxial cylindrical liquid electrode is used, and its geometric capacitance is confirmed to 16[pF]. And the dielectric dissipation factor, tan$\delta$, is measured by using the Video Bridge 2150. The thermal static oven with an automatically static temperature controller is used so as to support specific temperature to the specimen. This experiments for measuring the dielectric lass is performed at 20-120[$^{\circ}C$] in the temperature range, 30∼1.5x10$\^$5/[Hz] in the frequency range and 300∼1500[mV] in the voltage range. The result of experiment for the movement of carrier and the physical constants to contribute dielectric properties of specimen with a pure sodium chloride.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2000년도 추계학술대회 논문집
• /
• pp.480-483
• /
• 2000

Polyimide is a well-known organic dielectric material, which has not only high chemical and thermal stability but also good electrical insulating and mechanical properties. In this research, the electrical properties of PI LB films were investigated at room temperature. At low electric field, ohmic conduction(I∝V) was observed and the calculated electrical conductivity was about 9.7$\times$10$^{-15}$ S/cm. At high electric field, conduction(I∝V$^2$) was observed and the conduction mechanism was explained by space charge limited region effect. The dielectric constant of LB film was about 7.5.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
• /
• pp.259-259
• /
• 2007

The low temperature sintering of dolomite type borates, $CaZr(BO_3)_2$[CZB] ceramics and their microwave dielectric properties were investigated The sintering temperature of CZB ceramics could be reduced from $1150^{\circ}C$ to $925^{\circ}C$ by the addition of sintering additive. $CaZrO_3$, $ZrO_2$ and $CaB_2O_4$ second phases were found in the CZB ceramics. The syntheses, sintering properties, microstructures, and dielectricnproperties of dolomite-type borates were examined by XRD, thermal analysis, electron microscopy, network analyzer, and the results are discussed intensively. The compatibility with silver electrode was also explored.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1995년도 추계학술대회 논문집
• /
• pp.228-231
• /
• 1995

Phthalocyanine have a good sensitivity to the toxic gases like NO$_2$. Also its properties of good chemical and thermal suability give a potential to superiors gas sensing system. Depositioni of Octa(2-ethyhexyloxy) Copper Phthalocyanine is confirmed by transfers ratio, UB/visible spectra and current-voltage (I-V) characteristics.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
• /
• pp.63-66
• /
• 2004

The extraordinary intrinsic properties of SiC have made this material a suitable choice to use in high temperature, high frequency, and high voltage applications. In additional to these, SiC could be employed as the based material for nonvolatile memory applications, mainly due to its extremely low thermal-generation rate at room temperature. In this paper, the reasons of using this material in this particular application is presented and the development of the application over the past fifteen years is reviewed.

• 마이크로전자및패키징학회지
• /
• 제30권1호
• /
• pp.63-70
• /
• 2023

오늘날 심각한 환경 오염과 에너지의 중요성으로 전력 반도체의 중요도가 지속적으로 높아지고 있다. 특히 wide band gap(WBG)소자 중 하나인 SiC-MOSFET은 우수한 고전압 특성을 가지고 있어 그 중요도가 매우 높다. 하지만 SiC-MOSFET의 전기적 특성이 열에 민감하기 때문에 패키지를 통한 열 관리가 필요하다. 본 논문에서는 기존 전력 반도체에서 사용하는 direct bonded copper(DBC) 기판 방식이 아닌 insulated metal substrate(IMS) 방식을 제안한다. IMS는 DBC에 비해 공정이 쉬우며 coefficient of thermal expansion (CTE)가 높아서 비용과 신뢰성 측면에서 우수하다. IMS의 절연층인 dielectric film의 열전도도가 낮은 문제가 있지만 매우 얇은 두께로 공정이 가능하기 때문에 낮은 열 전도도를 충분히 극복할 수 있다. 이를 확인하기 위해서 이번 연구에서는 electric-thermal co-simulation을 수행하였으며 검증을 위해 DBC 기판과 IMS를 제작하여 실험하였다.

• 한국전기전자재료학회논문지
• /
• 제26권12호
• /
• pp.867-871
• /
• 2013

The Ti adhesion layers were deposited onto the glass substrate for transparent capacitors using $Bi_2Mg_{2/3}Nb_{4/3}O_7$ (BMNO) dielectric thin films. Graphene was transferred onto the Ti/glass substrate after growing onto the Ni/$SiO_2$/Si using rapid-thermal pulse CVD (RTPCVD). The BMNO dielectric thin films were investigated for the microstructure, dielectric and leakage properties in the case of capacitors with and without Ti adhesion layers. Leakage current and dielectric properties were strongly dependent on the Ti adhesion layers grown for graphene bottom electrode.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2001년도 하계학술대회 논문집
• /
• pp.406-409
• /
• 2001

In this paper, the microstructure and the dielectric properties of the Sr$_{1-x}$ Ca$_{x}$TiO$_3$(0$\leq$$\chi$$\leq$0.2) -based grain boundary layer ceramics were investigated. The specimens were sintered from 142$0^{\circ}C$ to 152$0^{\circ}C$ for 4hr. in $N_2$ gas. The 2nd phase formed by thermal diffusing from the surface lead to a very high apparent dielectric constant, $\varepsilon$$_{r}$>50000. The structural properties of the specimens were studied by X-ray diffraction and SEM, EDX. All specimens exhibited cubic structure. Increasing content of Ca, the peak intensity were decreased.ed.d.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2001년도 하계학술대회 논문집
• /
• pp.697-700
• /
• 2001

In this paper, the structural and electrical properties of the Sr$_{1-x}$ Ca$_{x}$TiO$_3$ (0$\leq$x$\leq$0.2) (0$\leq$r$\leq$0.2)-based grain boundary layer ceramics were investigated by X-ray, SEM and V-I system. Increasing the Ca content, the average grain size and the lattice constant were decreased. The relative density of all specimens was >96%. The 2nd phase formed by thermal diffusing from the surface lead to a very excellent electrical properties, that is, $\varepsilon$$_{r}$>50000, tan$\delta$<0.05, $\Delta$C< $\pm$ 10%.\pm$ 10%.%.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1997년도 춘계학술대회 논문집
• /
• pp.217-221
• /
• 1997

We have investigated the ferroelectric properties of multi-layered SrBi$_2$Ta$_2$$O_{9}$Pb(Zr,Ti)O$_3$, SBT/PZT, thin film capacitors. Specimens were prepared onto Pt-coated Si wafer by sol-gel method. Ferroelectric properties of these finns could be obtained only for thin SBT layers below 50nm in thickness. The values of dielectric constant and remnant polarization depend mainly on the thickness of SBT layer, which arises from the paraelectric interface layer between SBT and PZT due to the thermal diffusion of Pb. The value of remnant poarization of PZT/SBT is greater than that of SBT, and the plarization fatigue behaviors of PZT/SBT/Pt capacitors are somewhat improved as compared with those of PZT/Pt.t.