• Proceedings of the Korea Institute of Fire Science and Engineering Conference
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• 2013.04a
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• pp.58-59
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• 2013

전기설비의 사고 예방 및 확산을 방지하기 위해 설치하는 MCCB의 소손 특성을 해석하였다. MCCB의 작동 상태는 작동기구부의 금속 핀의 위치로 판정이 가능하다. 일반적으로 전기적인 신호가 있을 때 금속 핀이 작동하는 것으로 알려져 있으나 일반 화염에 의해서도 MCCB 작동기구부의 금속 작동 핀이 작동하는 것이 확인되었다. 따라서 MCCB의 트립 장치가 작동되었다는 이유만으로 과전류 또는 단락 등이 발생했다고 단정하는 것은 화재조사의 오류가 있을 수 있으므로 화재 발생 당시의 전체 상황을 고려하여 판단하는 것이 오판을 예방할 수 있다.

• 한국신재생에너지학회:학술대회논문집
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• 2006.11a
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• pp.364-367
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• 2006

The decrease of polarization resistance in cathode is the key point for intermediate temperature SOFC(Solid Oxide Fuel Cell). In this study, the Influence of Co substitution in B-site at perovskite PSCM (Pr0.3Sr0.7CoxMn(1-x)) was investigated. The PSCM series exhibits excellent MIEC(Mixed ionic Electronic Conductor) properties. The ASR(Area Specific Resistance) of PSCM3773 was $0.174{\Omega}cm^2\;at\;700^{\circ}C$. The activation energy of PSCM3773 was also lower than other compositions of PSCM. The ASR values were increased gradually during the thermal cycling test of PSCM37773 due to the delamination between electrolyte and cathode materials.

• Proceedings of the KIEE Conference
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• 2005.11a
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• pp.189-190
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• 2005

Ploycrystalline $Pb(Zr_{0.5},Ti_{0.5))O_3$ and $BaTiO_3$ powder were prepared by sol-gel process. The alumina substrate were sintered at $1400^{\circ}C$ with bottom electrode of Pt for 2 hours. The Pb(Zr0.5,Ti0.5)O3 / BaTiO3 multilayered thick films with laminating times were fabricated on alumina substrate by screening printing method. The obtained thick films were sintered at $800^{\circ}C$ with upper electrode of Ag paste for 1 hour. Structural properties of Pb(Zr0.5,Ti0.5)O3 / BaTiO3 multilayered thick films were investigated. As a result of the Differential Thermal Analysis(DTA) of Pb(Zr0.5,Ti0.5)O3, exothermic peak was observed at around 650 $^{\circ}C$. The X-ray diffraction (XRD) patterns indicated that BaTiO3 and Pb(Zr0.5,Ti0.5)O3 phases and porosities were formed in the interface of Pb(Zr0.5,Ti0.5)O3 / BaTiO3multilayered thick films.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.10
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• pp.890-896
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• 2009

Li(Ni, Co, Mn)$O_2$ has been known as one of the most promising cathode materials for lithium secondary batteries. However, it has some problems to overcome for commercialization such as inferior rate capability and unstable thermal stability. In order to address these problems, surface modification of cathode materials by coating has been investigated. In the coating techniques, selection of coating material is a key factor of obtaining enhanced properties of cathode materials. In this work, we introduced solid electrolyte (Li-La-Ti-O) as a coating material on the surface of $Li[Ni_{0.3}Co_{0.4}Mn_{0.3}]O_2$ cathode. Specially, we focused on a rate performance of Li-La-Ti-O coated $Li[Ni_{0.3}Co_{0.4}Mn_{0.3}]O_2$ cathode. Both bare and Li-La-Ti-O 2 wt.% coated sample showed similar discharge capacity at 0.5C rate. However, as the increase of charge-discharge rate to 3C, the coated samples displayed better discharge capacity and cyclic performance than those of bare sample.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.1
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• pp.6-12
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• 2019

Bonding properties of epoxy-containing solder joints were investigated by a high temperature aging test. Specimens were prepared by bonding an R3216 standard chip resistor to an OSP-finished PCB by a reflow process with two basic types of solder (SAC305 & Sn58Bi) pastes and two epoxy-solder (SAC305+epoxy & Sn58Bi+epoxy) pastes. In all epoxy solder joints, an epoxy fillet was formed in the hardened epoxy, lying around the outer edge of the solder joint, between the chip and the Cu pad. In order to analyze the bonding characteristics of solder joints at high temperatures, a high-temperature aging test at $150^{\circ}C$ was carried out for 14 days (336 h). After aging, the intermetallic compound $Cu_6Sn_5$ was found to have formed in the solder joint on the Cu pad, and the shear stress on the conventional solder joint was reduced by a significant amount. The reason that the shear force did not decrease much, even though in epoxy solder, was thatbecause epoxy hardened at the outer edge of the supported solder joints. Using epoxy solder, strong bonding behavior can be ensured due to this resistance to shear force, even in metallurgical changes such as those where intermetallic compounds form at solder joints.

• Journal of the Korean Vacuum Society
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• v.21 no.6
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• pp.328-332
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• 2012

The work function of Ag (silver) is too low (~4.3 eV) to be used as an electrode of T-OLED (Top Emission Organic Light Emitting Diode). To solve this weakness, researches used plasma-, UV-, or thermal treatment on Ag films in order to increase the work function (~5.0 eV). So, most of studies have focused only on the work function of various treated Ag films, but studies focusing on nanomechanical properties were very important to investigate the efficiency and life time of T-OLED etc. In this paper, we focused on the mechanical properties of the Ag and $AgO_x$ film. The Ag was deposited on a glass substrate with the thickness of 150 nm by using rf-magnetron sputter with the power was fixed at 100 W and working pressure was 3 mTorr. The deposited Ag film was UV treated by UV lamp for several minutes (0~9 min). We measured the sheet resistance and mechanical property of the deposited film. From the experimental result, there were some differences of the sheet resistance and surface hardness of Ag thin film between short time (0~3 min) and long time UV treatment. These result presumed that the induced stress was taken place by the surface oxidation after UV treatment.

• Journal of the Korean Magnetics Society
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• v.16 no.5
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• pp.240-244
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• 2006

In this paper, magnetic properties and annealing behavior of spin valve structures using Mo(MoN) layers as underlayers were studied varying the thickness of the underlayers. The spin valve structure was consisted of Si substrate/$SiO_2(2,000{\AA})/Mo(MoN)(t{\AA})/NiFe(21\;{\AA})/CoFe(28\;{\AA})/Cu(22\;{\AA})/CoFe(18\;{\AA})/IrMn(65\;{\AA})/Ta(25\;{\AA})$. Also, MoN films were deposited on Si substrates and their thermal annealing behavior was analyzed. The resistivity of the MoN film increased as the $N_2$ gas flow rate was increased. After annealing at $600^{\circ}C$, XRD results did not show peaks of silicides. XPS results indicated MoN film deposited with 5 sccm of $N_2$ gas flow rate was more stable than the film deposited with 1 sccm of $N_2$ gas flow rate. The variations of MR ratio and magnetic exchange coupling fold were small for the spin valve structures using Mo(MoN) underlayers up to thickness of45 ${\AA}$. MR ratio of spin valves using MoN underlayers deposited with various $N_2$ gas flow rate was about 7.0% at RT and increased to about 7.5% after annealing at $220^{\circ}C$. Upon annealing at $300^{\circ}C$, the MR ratio decreased to about 3.5%. Variation of $N_2$ gas flow rate up to 5 sccm did not change the MR ratio and $H_{ex}$ appreciably.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1996.06a
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• pp.75-87
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• 1996

This review is presented under the following headings: 1.Introduction 1.1 Brief review of the properties of AlN 1.2 Historical survey of work on ceramic and single crystal AlN 2.Thermochemical background 3.Crystal growth 4.Doping 5.Potential applications and future work The known properties of AlN which make it of interest for various are discussed briefly. The properties include chemical stability, crystal structure and lattice constants, refractive indices and other optical properties, dielectric constant, surface acoustic wave velocity and thermal conductivity. The history of work in single crystals, thin films and ceramics are outlined and the thermochemistry of AlN reviewed together with some of the relevant properties of aluminium and nitrogen; the problems encountered in growing crystals of AlN are shown to arise directly from these thermochemical relationships. Methods have been reported in the literature for growing AlN crystals from melts, solution and vapour and these methods are compared critically. It is proposed that the only practicable approach to the growth of AlN is by vapour phase methods. All vapour based procedures share the share the same problems: $.$the difficulty of preventing contamination by oxygen & carbon $.$the high bond energy of molecular nitrogen $.$the refractory nature of AlN (melting point~3073K at 100ats.) $.$the high reactivity of Al at high temperatures It is shown that the growth of epitactic layers and polycrystalline layers present additional problems: $.$chemical incompatibility of substrates $.$crystallographic mismatch of substrates $.$thermal mismatch of substrates The result of all these problems is that there is no good substrate material for the growth of AlN layers. Organometallic precursors which contain an Al-N bond have been used recently to deposit AlN layers but organometallic precursors gave the disadvantage of giving significant carbon contamination. Organometallic precursors which contain an Al-N bound have been used recently to deposit AlN layers but organometallic precursors have the disadvantage of giving significant carbon contamination. It is conclude that progress in the application of AlN to optical and electronic devices will be made only if considerable effort is devoted to the growth of larges, pure (and particularly, oxygen-free) crystals. Progress in applications of epi-layers and ceramic AlN would almost certainly be assisted also by the availability of more reliable data on the pure material. The essential features of any stategy for the growth of AlN from the vapour are outlined and discussed.

• Journal of the Korean Wood Science and Technology
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• v.38 no.4
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• pp.333-340
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• 2010

The Korean Dendropanax lacquer, made from a natural resinous sap from Dendropanax orbifera Lev., was used as a golden and transparent varnish for the traditional artifacts (armor uits, helmets, arrowheads, etc.) to make them be brilliant golden color. The cured film of the acquer has excellent protective properties such as weatherability, water resistance, and nticorrosive. But, one of disadvantages is that takes a long time and much energy to fulfill curing the lacquer. The chemical constituents of the lacquer contained conjugated diene compounds s the photopolymerizable monomers. These monomers easily polymerized in sunlight to form olden-colored, hard-coating films in a short time. Photooxidation may be one of the most mportant reactions in the chemistry of the lacquer. Although the Korean Dendropanax Lacquer hould be dried to a thoroughly dry stage to achieve optimal film properties, curing with elevated emperatures may be required for the protracted curing time at atmospheric temperature. So we ntended to accelerate the curing rate of the lacquer by dual curing of thermal and radiation uring. The effect of thermal initiator on the thermal curing reaction was evaluated by monitoring he changes in double bond peak with FT-IR. Then the curing rate of the lacquer blended with hermal initiator and photoinitiator together was measured during dual curing using a RPT with V spot curing machine. Thermal initiator not only accelerated the curing rate but also improved he physical property. And the curing rate of the Korean Dendropanax lacquer was improved by ual curing method of thermal and UV curing. According to these results, the application area of he Korean Dendropanax lacquer could be expanded to surface coatings for electronic devices uch as mobile phones or electronics.

• Electronic Materials Letters
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• v.14 no.6
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• pp.689-699
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• 2018

Nanostructured Ni doped $Bi_2S_3$ ($Bi_{2-x}Ni_xS_3$, $0{\leq}x{\leq}0.07$) is explored as a candidate for telluride free thermoelectric material, through a combination process of mechanical alloying with subsequent consolidation by cold pressing followed with a sintering process. The cold pressing method was found to impact the thermoelectric properties in two ways: (1) introduction of the dopant atom in the interstitial sites of the crystal lattice which results in an increase in carrier concentration, and (2) introduction of a porous structure which reduces the thermal conductivity. The electrical resistivity of $Bi_2S_3$ was decreased by adding Ni atoms, which shows a minimum value of $2.35{\times}10^{-3}{\Omega}m$ at $300^{\circ}C$ for $Bi_{1.99}Ni_{0.01}S_3$ sample. The presence of porous structures gives a significant effect on reduction of thermal conductivity, by a reduction of ~ 59.6% compared to a high density $Bi_2S_3$. The thermal conductivity of $Bi_{2-x}Ni_xS_3$ ranges from 0.31 to 0.52 W/m K in the temperature range of $27^{\circ}C$ (RT) to $300^{\circ}C$ with the lowest ${\kappa}$ values of $Bi_2S_3$ compared to the previous works. A maximum ZT value of 0.13 at $300^{\circ}C$ was achieved for $Bi_{1.99}Ni_{0.01}S_3$ sample, which is about 2.6 times higher than (0.05) of $Bi_2S_3$ sample. This work show an optimization pathway to improve thermoelectric performance of $Bi_2S_3$ through Ni doping and introduction of porosity.