Browse > Article
http://dx.doi.org/10.5757/JKVS.2012.21.6.328

The Study of Ag Thin Film of Suitable Anode for T-OLED: Focused on Nanotribology Methode  

Lee, Kyu Young (Department of Nano & Electronic Physics, Kookmin University)
Kim, Soo In (Department of Nano & Electronic Physics, Kookmin University)
Kim, Joo Young (Department of Nano & Electronic Physics, Kookmin University)
Kwon, Ku Eun (Department of Nano & Electronic Physics, Kookmin University)
Kang, Yong Wook (Geonggi Science Highschool)
Son, Ji Won (Geonggi Science Highschool)
Jeon, Jin Woong (Geonggi Science Highschool)
Kim, Min Chul (Geonggi Science Highschool)
Lee, Chang Woo (Department of Nano & Electronic Physics, Kookmin University)
Publication Information
Journal of the Korean Vacuum Society / v.21, no.6, 2012 , pp. 328-332 More about this Journal
Abstract
The work function of Ag (silver) is too low (~4.3 eV) to be used as an electrode of T-OLED (Top Emission Organic Light Emitting Diode). To solve this weakness, researches used plasma-, UV-, or thermal treatment on Ag films in order to increase the work function (~5.0 eV). So, most of studies have focused only on the work function of various treated Ag films, but studies focusing on nanomechanical properties were very important to investigate the efficiency and life time of T-OLED etc. In this paper, we focused on the mechanical properties of the Ag and $AgO_x$ film. The Ag was deposited on a glass substrate with the thickness of 150 nm by using rf-magnetron sputter with the power was fixed at 100 W and working pressure was 3 mTorr. The deposited Ag film was UV treated by UV lamp for several minutes (0~9 min). We measured the sheet resistance and mechanical property of the deposited film. From the experimental result, there were some differences of the sheet resistance and surface hardness of Ag thin film between short time (0~3 min) and long time UV treatment. These result presumed that the induced stress was taken place by the surface oxidation after UV treatment.
Keywords
$AgO_x$; UV oxidization; Atomic force microscopy; Nano indenter; Residual stress;
Citations & Related Records
Times Cited By KSCI : 3  (Citation Analysis)
연도 인용수 순위
1 Y. J. Doh, J. S. Park, W. S. Jeon, R. Pode, and J. H. Kwon, Organic Electronics 13, 586 (2012).   DOI
2 J. Y. Kim, S. I. Kim, K. Y. Lee, H. K. Kim, J. H. Jun, Y. J. Jeong, M. C. Kim, J. R. Lee, and C. W. Lee, J. Korean Vac. Soc. 21, 12 (2012).   DOI   ScienceOn
3 S. I. Kim, H. W. Oh, J. W. Huh, B. K. Ju, and C. W. Lee, Thin Solid Films 519, 6872 (2011).   DOI
4 J. M. Moon, J. H Bae, J. A. Jeong, and S. W. Jeong, Appl. Phys. Lett. 90, 163516 (2007).   DOI
5 H. W. Choi, S. Y. Kim, K. B. Kim, Y. H. Tak, and J. L. Lee, Appl. Phys. Lett. 86, 012104 (2005).   DOI
6 S. B. Bubenhofer, C. M. Schumacher, F. M. Koehler, N. A. Luechinger, G. A. Sotiriou, R. N. Grass, and W. J. Stark, ACS Appl. Mater. Interfaces 4, 2644 (2012).
7 S. I. Kim, K. Y. Lee, J. Y. Kim, and C. W. Lee, J. Korean Vac. Soc. 20, 456 (2011).   DOI
8 K. Y. Lee, C. B. Lee, S. I. Kim, and C. W. Lee, J. Korean Vac. Soc. 19, 360 (2010).   DOI
9 T. Y. Tsui, W. C. Oliver, and G. M. Pharr, J. Mater. Res. 11, (1996).
10 Y. H. Lee and D. G. Kwon, J. Mater. Res. 17, 901 (2002).   DOI   ScienceOn