• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.05a
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• pp.31-34
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• 2006

In this study, $(Ba_{0.7}\;Sr_{0.3})TiO_3$ was coated on Pt/Ti/$SiO_2$/Si wafer by using Sol-Gel method. Coating process was repeated 3~5 times and then sintered at 750[$^{\circ}C$] for 1 hour. Each specimen was analyzed structure and electrical characteristics. In structure characteristics, EDX analyzed the samples ratio of the formation on the structural property. Thermal behavior was observed with TG-DTA and concluded that the heat-treatment of the samples was degreed 750[$^{\circ}C$]. Surface and section of thin films were observed with SEM.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.2
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• pp.142-151
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• 2007

Non-halogen flame retardant have been focus of extensive research because of environmental problem. Hexakisphenokycyclotriphosphazene was synthesized in order to use as the flame retardant of ABS resin. And using bisphenol A, bisphenol S, and resorcinol, the polymers which contained cyclophosphazene structure were synthesized in order to also use as the flame retardants of ABS resin. All of the synthesized polymers themselves got the excellent flame retardancy. And as the molecular weight of the compound were increased, the thermal stability was increased. But when the synthesized compounds were used as the flame retardants for ABS resin, the lower molecular weight compound in these compounds showed the better flame retardancy and the better physical properties of ABS resin. In case of using resorcinol, it showed the best flame retardancy.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.560-564
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• 1999

In general, the main dielectric materials for EHV electric appliances were epoxy, EPDM and Silicone rubber. The Silicone rubber has been rosed so many among them in EHV appliances in the worldwide, especially in Europe and North America. The reason why it is very stable in the thermal, mechanical and electrical environment. Therefore it is still becoming increasingly widespread in the application of the EHV appliances as a main dielectric material. On this study, investigated about real appliances and tested on basic properties of the Silicone rubber compared to organic dielectric material that is EPDM. At the result, the Silicone rubber is more dominant as main dielectric material for EHV appliances than any other organic polymers.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.116-116
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• 2007

We investigated the characteristics of the Hafnium silicate (Hf-silicate) film which is grown by ALD (atomic layer deposition). The Hf-silicate films that were annealed by the RTP. The physical and electrical properties of nitrided Hf-silicate films, incorporated by NO gas and $NH_3$ gas annealing, were investigated by XPS, TEM and I-V measurement. We confirmed the nitrogen incorporation during NO gas annealing treatment effectively enhances the thermal stability of Hf-silicate. The tendency of nitnitridation in NO gas and $NH_3$ is different. Leakage current is improved in post NO gas annealing.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.63-66
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• 1999

The effects of UV and ozone on the weathershed materials for 5 polymer insulators were investigated. This study was carried by material characterizations such as surface microstructure, thermal property, chemical structure and contact angle. The aged specimens are compared with new ones. In case of UV, the chalking of fillers and cracking of surface were increased with the increase of UV radiation time. In case of ozone, aged specimens are not different from new ones. From this study, It can be concluded that UV has more effect on the surface properties of weathershed materials than ozone.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.313-316
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• 2003

The lead zirconate titanate, $Pb(Zr_{0:52}Ti_{0:48})O_3$, films of $0.5\;{\mu}m,\;1\;{\mu}m$ and $2\;{\mu}m$ thickness were fabricated on $Pt/Ti/SiO_2/Si$ substrate by the rf magnetron sputtering method. The PZT films were annealed using by a rapid thermal annealing (RTA) method. The thickness dependence of the film structure, dielectric properties, Polarization-electric field hysteresis loops and capacitance-voltage characteristics were investigated over the thickness range of $0.5\;{\mu}m,\;1\;{\mu}m$ and $2\;{\mu}m$. According to the XRD patterns of the films, (110) peak intensity increases with film thickness increased. The increase of PZT films thickness leads to the decrease of the remanent polarization and the dielectric constant.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.04a
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• pp.39-40
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• 2006

We prepared ZnO:Al (AZO) thin films on polycarbonate (Pc) and polyethersulfon (PES). Because the polymer substrate has weak thermal resistance. The AZO thin films were deposited at room temperature by facing targets sputtering (FTS) method In the work, AZO thin films were deposited with different thickness in 1mTorr and $O_2$ gas flow rate 0.05. The electrical, optical and crystallographic properties were measured From the results, the resistivity of $7.3{\times}10^{-4}{\Omega}cm$ and transmittance of over 80% in visible range were obtained.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.524-525
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• 2005

The principal problems in development of dielectric paste materials for PDP(plasma display panel)are PbO free paste and low melting temperature. We prepared PbO free paste from glasses in the system $ZnO-B_2O_3-Bi_2O_3-SiO_2$, DTA, and XRD were used to characterize $ZnO-B_2O_3-Bi_2O_3-SiO$ glasses. In this present study, PbO free paste had thermal expansion of $74\times10^{-7}/^{\circ}C$, DTA transformation point of $470^{\circ}C$, and firing condition of $540^{\circ}C$, 20min.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.10
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• pp.648-652
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• 2014

We have investigated the effect of electrical properties of amorphous InGaZnO thin film transistors (a-IGZO TFTs) by post thermal annealing in $O_2$ ambient. The post-annealed in $O_2$ ambient a-IGZOTFT is found to be more stable to be used for oxide-based TFT devices, and has better performance, such as the on/off current ratios, sub-threshold voltage gate swing, and, as well as reasonable threshold voltage, than others do. The interface trap density is controlled to achieve the optimum value of TFT transfer and output characteristics. The device performance is significantly affected by adjusting the annealing condition. This effect is closely related with the modulation annealing method by reducing the localized trapping carriers and defect centers at the interface or in the channel layer.

• Transactions on Electrical and Electronic Materials
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• v.17 no.3
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• pp.146-149
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• 2016

The CrN/TiN/Al thin films for solar selective absorber were prepared by dc reactive magnetron sputtering with multi targets. The binary nitride CrN layer deposited with change in N₂ gas flow rates. The gas mixture of Ar and N2 was an important parameter during sputtering deposition because the metal volume fraction (MVF) was controlled by the N2 gas flow rate. In this study, the crystallinity and surface properties of the CrN/TiN/Al thin films were estimated by X-ray diffraction (XRD), atomic force microscopy (AFM) and field emission scanning electron microscopy (FESEM). The composition and depth profile of thin films were investigated using Auger electron spectroscopy (AES). The absorptance and reflectance with wavelength spectrum were recorded by UV-Vis-NIR spectrophotometry at a range of 300~1,100 nm.