• Journal of Electrical Engineering and Technology
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• v.8 no.6
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• pp.1320-1327
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• 2013

In this paper, two different electromagnetic energy harvesters using bulk micromachined silicon spiral springs and Polydimethylsiloxane (PDMS) packaging technique have been fabricated, characterized, and compared to generate electrical energy from ultra-low ambient vibrations under 0.3g. The proposed energy harvesters were comprised of a highly miniaturized Neodymium Iron Boron (NdFeB) magnet, silicon spiral spring, multi-turned copper coil, and PDMS housing in order to improve the electrical output powers and reduce their sizes/volumes. When an external vibration moves directly the magnet mounted as a seismic mass at the center of the spiral spring, the mechanical energy of the moving mass is transformed to electrical energy through the 183 turns of solenoid copper coils. The silicon spiral springs were applied to generate high electrical output power by maximizing the deflection of the movable mass at the low level vibrations. The fabricated energy harvesters using these two different spiral springs exhibited the resonant frequencies of 36Hz and 63Hz and the optimal load resistances of $99{\Omega}$ and $55{\Omega}$, respectively. In particular, the energy harvester using the spiral spring with two links exhibited much better linearity characteristics than the one with four links. It generated $29.02{\mu}W$ of output power and 107.3mV of load voltage at the vibration acceleration of 0.3g. It also exhibited power density and normalized power density of $48.37{\mu}W{\cdot}cm-3$ and $537.41{\mu}W{\cdot}cm-3{\cdot}g-2$, respectively. The total volume of the fabricated energy harvesters was $1cm{\times}1cm{\times}0.6cm$ (height).

• Journal of Advanced Marine Engineering and Technology
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• v.37 no.4
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• pp.351-357
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• 2013

In flip chip packaging, underfill process is used to fill epoxy bonder into the gap between a chip and a substrate in order to improve the reliability of electronic devices. Underfill process by capillary motion can give rise to unwanted air void formations since the arrangement of solder bumps affects the interfacial dynamics of flow meniscus. In this paper, the unsteady flows in the capillary underfill process are visualized and then the racing effect and merging of the meniscus are investigated according to the arrangement of solder bumps. The result is shown that at higher bump density, the fluid flow perpendicular to the main direction of flow becomes stronger so that more air voids are formed. This phenomenon is more conspicuous at a staggered bump array than at a rectangular bump array.

• Journal of Welding and Joining
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• v.24 no.2
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• pp.64-70
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• 2006

The 3-dimensional (3D) chip stacking technology is a leading technology to realize a high density and high performance system in package (SiP). There are several kinds of methods for chip stacking, but the stacking and interconnection through Cu filled through-hole via is considered to be one of the most advanced stacking technologies. Therefore, we studied the optimum process of through-hole via formation and Cu filling process for Si wafer stacking. Through-hole via was formed with DRIE (Deep Reactive ion Etching) and Cu filling was realized with the electroplating method. The optimized conditions for the via formation were RE coil power of 200 W, etch/passivation cycle time of 6.5 : 6 s and SF6 : C4F8 gas flow rate of 260 : 100 sccm. The reverse pulsed current of 1.5 A/dm2 was the most favorable condition for the Cu electroplating in the via. The Cu filled Si wafer was chemically and mechanically polished (CMP) for the following flip chip bumping technology.

• Korean Chemical Engineering Research
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• v.54 no.6
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• pp.723-733
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• 2016

Intensive researches have been focused on the 3-dimensional packaging technology using through silicon via (TSV) to overcome the limitation in Cu interconnection scaling. Void-free filling of TSV by the Cu electrodeposition is required for the fabrication of reliable electronic devices. It is generally known that sufficient inhibition on the top and the sidewall of TSV, accompanying the selective Cu deposition on the bottom, enables the void-free bottom-up filling. Organic additives contained in the electrolyte locally determine the deposition rate of Cu inside the TSV. Investigation on the additive chemistry is essential for understanding the filling mechanisms of TSV based on the effects of additives in the Cu electrodeposition process. In this review, we introduce various filling mechanisms suggested by analyzing the additives effect, research on the three-additive system containing new levelers synthesized to increase efficiency of the filling process, and methods to improve the filling performance by modifying the functional groups of the additives or deposition mode.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.39 no.10
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• pp.1011-1019
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• 2015

Insulated-gate bipolar transistors (IGBTs) are the predominantly used power semiconductors for high-current applications, and are used in trains, airplanes, electrical, and hybrid vehicles. IGBT power modules generate a considerable amount of heat from the dissipation of electric power. This heat generation causes several reliability problems and deteriorates the performances of the IGBT devices. Therefore, thermal management is critical for IGBT modules. In particular, realizing a proper thermal design for which the device temperature does not exceed a specified limit has been a key factor in developing IGBT modules. In this study, we investigate the thermal behavior of the 1200 A, 3.3 kV IGBT module package using finite-element numerical simulation. In order to minimize the temperature of IGBT devices, we analyze the effects of various packaging materials and different thickness values on the thermal characteristics of IGBT modules, and we also perform a design-of-experiment (DOE) optimization

• Journal of Welding and Joining
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• v.13 no.3
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• pp.134-146
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• 1995

Aluminium nitride(AlN) is currently under investigation as potential candidate for replacing alumium oxide(Al$_{2}$ $O_{3}$) as a substrate material for for electronic circuit packaging. Brazing of aluminium nitride(AlN) to Cu with Ag base active alloy containing Ti has been investigated in vacuum. Binary Ag$_{98}$ $Ti_{2}$(AT) and ternary At-1wt.%Al(ATA), AT-1wt.%Ni(ATN), AT-1wt.% Mn(ATM) alloys showed good wettability to AlN and led to the development of strong bond between brate alloy and AlN ceramic. The reaction between AlN and the melted brazing alloys resulted in the formation of continuous TiN layers at the AlN side iterface. This reaction layer was found to increase by increase by increasing brazing time and temperature for all filler metals. The bond strength, measured by 4-point bend test, was increased with bonding temperature and showed maximum value and then decreased with temperature. It might be concluded that optimum thickness of the reaction layer was existed for maximum bond strength. The joint brazed at 900.deg.C for 1800sec using binary AT alloy fractured at the maximum load of 35kgf which is the highest value measured in this work. The failure of this joint was initiated at the interface between AlN and TiN layer and then proceeded alternately through the interior of the reaction layer and AlN ceramic itself.

• Journal of the Korean Applied Science and Technology
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• v.32 no.1
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• pp.85-92
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• 2015

The 50 mole% HCl doped polyaniline(PAni) was synthesized by polymerization of aniline in the presence of hydrochloric acid and ammonium persulfate(APS) as dopant and oxidant, respectively. Then, conducting biodegradable cellulose acetate composite films were also prepared with PAni in acetone to find their applicability to antistatic packaging materials. The tensile strength of PCA05 film with 5 wt% of PAni was decreased by 27% from $377.1kg_f/cm^2$ for CA film itself to $275.2kg_f/cm^2$. Elongation was also decreased from 7.65% to 4.35%. Surface registance of $7.0{\times}10^9{\Omega}/sq$ could be achieved for the PCA containing 5 wt% of PAni. Therefore, this PCA05 film can be applied to antistatic package film for electronic board. In addition, decomposition temperature of these PCA films obtained by thermogravimetric analysis(TGA) was decreased with the amount of PAni in PCA films, and the final weight of char was directly proportional to PAni contents. From this thermal result we can calculate the content of PAni in unknown PCA films.

• Journal of the Korean institute of surface engineering
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• v.36 no.5
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• pp.373-378
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• 2003

With increasing environmental concerns, application of lead-free solder and fluxless soldering process have been taken attention from the electronic packaging industry. Plasma treatment is one of the soldering methods for the fluxless soldering, and it can prevent environmental pollution cased by flux. On this study fluxless soldering process under $Ar-H_2$plasma using lead free solders such as Sn-3.5 wt%Ag, Sn-3.5 wt%Ag-0.7 wt%Cu and Sn-37%Pb for a reference was investigated. As the plasma reflow has higher soldering temperature than normal air reflow, the effects of UBM(Under Bump Metallization) thickness on the interfacial reaction and bonding strength can be critical. Experimental results showed in case of the thin UBM, Au(20 nm)/Cu(0.3 $\mu\textrm{m}$)/Ni(0.4 $\mu\textrm{m}$)/Al(0.4 $\mu\textrm{m}$), shear strength of the soldered joint was relatively low as 19-27㎫, and it's caused by the crack observed along the bonded interface. The crack was believed to be produced by the exhaustion of the thin UBM-layer due to the excessive reaction with solder under plasma. However, in case of thick UBM, Au(20 nm)/Cu(4 $\mu\textrm{m}$)/Ni(4 $\mu\textrm{m}$)/Al(0.4 $\mu\textrm{m}$), the bonded interface was sound without any crack and shear strength gives 32∼42㎫. Thus, by increasing UBM thickness in this study the shear strength can be improved to 50∼70%. Fluxed reflow soldering under hot air was also carried out for a reference, and the shear strength was 48∼52㎫. Consequently the fluxless soldering with plasma showed around 65∼80% as those of fluxed air reflow, and the possibility of the $Ar-H_2$ plasma reflow was evaluated.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.12
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• pp.73-81
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• 2011

As high speed digital systems continue to use components with faster edge rate and clock speeds, transmission of the digital information, it can bring about many troubles. The increasing requirement for controlled impedance PCBs becomes both a critical success factor and a design challenge to implement a system. Especially, the noise sources in high frequency digital systems include the noise in power supply, ground and packaging, and they destroy the fidelity of signals. Therefore PCB design with impendence matching is needed to improve fidelity of signal in H/W. In this paper, we have developed an impedance control and analysis tool for multi-layer PCB design, and simulates the tracks controlled impedance with the test coupon. So, it can save the design time and support the economical PCB design.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.18 no.1
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• pp.116-121
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• 2009

Thermosonic flip chip bonding is an important technology for the electronic packaging due to its simplicity, cost effectiveness and clean and dry process. Mechanical properties of the horn and the shank, such as the natural frequency and the amplitude, have a great effect on the bonding capability of the transverse flip chip bonding system. In this research, two kinds of study are performed. The first is the new design of the clamp and the second is the effect of tolerance parameters to the performance of the system. The clamp with a bent shape is newly designed to hold the nodal point of the flip chip. The second is the effect of the design parameters on the vibration amplitude and planarity at the end of the shank. The variation of the tolerance parameters changes the amplitude and the frequency of the vibration of the shank. They, in turn, have an effect on the quantity of the plastic deformation of the gold ball bump, which determined the quality of the flip chip bonding. The tolerance parameters that give the great effect on the amplitude of the shank are determined using Taguchi's method. Error of set-up angle, the length and diameter of horn and error of the length of the shank are determined to be the parameters that have peat effect on the amplitude of the system.