• The Journal of the Korea institute of electronic communication sciences
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• v.5 no.5
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• pp.428-434
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• 2010

In this paper, we propose intelligent SAN(Ship Area Network) which is reliable transmission by integration of optical network of wire communication and Zigbee of wireless communication. We also implement module for remote control and constitute, managing for a various sensors and a controllers which are connected SAN integration network It will be help to prevent accident of ship to monitor work environment, real time monitoring of a equipment and main compartment of a poor ship inside. And it will be also available to enhance labor reduction, sailing safety and sailing economical efficiency of ship inside.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.11
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• pp.991-994
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• 2007

In this paper, we have designed the anti-reflection(AR) coating for $1400{\sim}1600$ nm wavelength range on the ferrule facet of optical connector. The low-temperature ion-assisted deposition was applied to AR coating on the ferrule facet in order to avoid damage of optical connector. We have measured the refractive index of coating film($Ta_2O_5\;and\;SiO_2$) using the ellipsometer and optimized the film thickness using the SEM and thickness measurement equipment. UV-VIS-NIR spectrophotometer is used to measure transmissivity of the AR coated ferrule facet. The refractive index of $Ta_2O_5\;and\;SiO_2$ is $2.123{\sim}2.125$ and $1.44{\sim}1.442$, respectively, for $1400{\sim}1600$ nm wavelength range. The transmissivity of the AR coated ferule facet is more than 99.8 % for $1425{\sim}1575$ nm wavelength range and more than 99.5 % for $1400{\sim}1600$ nm wavelength range. The return loss of the AR coated ferrule facet is 30.1 dB.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.464-464
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• 2010

A few years ago, for maintaining high stability and production yield of production equipment in a semiconductor fab, on-line monitoring of wafers is required, so that semiconductor manufacturers are investigating a software based process controlling scheme known as virtual metrology (VM). As semiconductor technology develops, the cost of fabrication tool/facility has reached its budget limit, and reducing metrology cost can obviously help to keep semiconductor manufacturing cost. By virtue of prediction, VM enables wafer-level control (or even down to site level), reduces within-lot variability, and increases process capability, $C_{pk}$. In this research, we have practiced VM on $SiO_2$ etch rate with optical emission spectroscopy(OES) data acquired in-situ while the process parameters are simultaneously correlated. To build process model of $SiO_2$ via, we first performed a series of etch runs according to the statistically designed experiment, called design of experiments (DOE). OES data are automatically logged with etch rate, and some OES spectra that correlated with $SiO_2$ etch rate is selected. Once the feature of OES data is selected, the preprocessed OES spectra is then used for in-situ sensor based VM modeling. ICP-RIE using 葰.56MHz, manufactured by Plasmart, Ltd. is employed in this experiment, and single fiber-optic attached for in-situ OES data acquisition. Before applying statistical feature selection, empirical feature selection of OES data is initially performed in order not to fall in a statistical misleading, which causes from random noise or large variation of insignificantly correlated responses with process itself. The accuracy of the proposed VM is still need to be developed in order to successfully replace the existing metrology, but it is no doubt that VM can support engineering decision of "go or not go" in the consecutive processing step.

• Proceedings of the Korean Vacuum Society Conference
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• 2009.08a
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• pp.177-177
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• 2009

• Journal of Sensor Science and Technology
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• v.29 no.6
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• pp.412-419
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• 2020

In this study, a PID control method for sweeping automatic linearization of a wavelength swept laser is proposed. First, the closedloop transfer function embodying the PID control is derived. Through the simulation of the function, K_p = 0.022, K_i = 0.008, K_d = 0.002 were obtained as the best PID coefficients for fast linear sweeping. The performance test using the PID coefficients showed that linear sweeping was held up well with a 98.7% decrement in nonlinearity after the 10th feedback, and 45 nm sweeping range, 1 kHz sweeping frequency, and 8.8 mW average optical power were obtained. The equipment consists of a fiber Bragg grating array, an optical-electronic conversion circuit, and a LabVIEW FPGA program. Every 5s, automatic feedback and PID control generate a new compensated waveform and produce a better linear sweeping than before. Compared with nonlinear sweeping, linear sweeping can reduce the cumbersome and time-consuming recalibration processes and produce more accurate measurement results.

• IEIE Transactions on Smart Processing and Computing
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• v.3 no.5
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• pp.331-337
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• 2014

Ge is becoming an increasingly popular semiconductor material with high Si compatibility for on-chip optical interconnect technology. For a better manifestation of the meritorious material properties of Ge, its surface treatment should be performed satisfactorily before the electronic and photonic components are fabricated. Ex-situ rapid thermal annealing (RTA) processes with different gases were carried out to examine the effects of the annealing gases on the thin-film quality of Ge grown epitaxially on Si substrates. The Ge-on-Si samples were prepared in different structures using the same equipment, reduced-pressure chemical vapor deposition (RPCVD), and the samples annealed in $N_2$, forming gas (FG), and $O_2$ were compared with the unannealed (deposited and only cleaned) samples to confirm the improvements in Ge quality. To evaluate the thin-film quality, room-temperature photoluminescence (PL) measurements were performed. Among the compared samples, the $O_2$-annealed samples showed the strongest PL signals, regardless of the sample structures, which shows that ex-situ RTA in the $O_2$ environment would be an effective technique for the surface treatment of Ge in fabricating Ge devices for optical computing systems.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2007.05a
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• pp.191-196
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• 2007

With the development of micro electronic circuits and optical equipment, the demand for developing smart munitions with the ability to autonomously search for and attack targets has increased. Since the electronic components within smart munitions are affected by high temperatures, pressure, and impulsive forces upon the combustion of gunpowder, stability and reliability need to be secured for them. Securing those stability and reliability requires soft recovery system which can decelerate smart munitions. A theoretical analysis of flow is performed for the secure recovery of bullets on the basis of Navier-Stokes equation for compressible fluids. The inner pressure on a pressure tube, the speeds of bullets, and the deceleration of munitions are calculated theoretically. Theoretical results are compared with the data from the experiment with soft recovery system set up at the laboratory.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.607-610
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• 2004

An electric power efficiency of electrodeless fluorescent lamp has big relativie propertye of gas in lamp, gas pressure, lamp formation, ingredients of magnetic substance and shape and action frequency etc. We used magnetic substance that open self-examination material of electrodeless fluorescent lamp antenna. Ferrite that is used in this experiment was Mn-Zn type. Coill turn was changed from 13th to 13th turn to recognize brightness change of lamp by winding number. Optical equipment that used in an experiment was used to measure brightness (LS-100). When an electrodeless fluorescent ]amp was made using and T company's PE22, was it showed the highest brightness. As number of winding is increased the brightness increased, and starting characteristic became good.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.6
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• pp.481-485
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• 2012

ZnO nanowires were synthesized by hydrothermal technique. Prepared synthesis aqueous solutions were preserved by preheating in autoclave type synthesis equipment with various preheating time of 1 h difference. ITO-coated corning glass substrates deposited with AZO seed layers were then inserted in the preheated synthesis aqueous solutions and ZnO nanowires were grown for 180 min at $90^{\circ}C$. Density, length and aspect ratio of the grown ZnO nanowires were investigated. Composition, structural and optical properties of the grown ZnO nanowires were analyzed. Characteristics of the ZnO nanowires were comparatively studied in relation with $Zn^{2+}$ ion concentration measured directly after the preheating of synthesis aqueous solution.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.9
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• pp.741-746
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• 2009

Compare to conventional Indium Tin Oxide (ITO) film deposition methods, cesium assisted sputtering method has been shown superior electrical, mechanical, and optical film properties. However, it is not easy to use cesium assisted sputtering method since ITO film properties are very sensitive to Cesium assisted equipment condition but their mechanism is not yet clearly defined physically or mathematically. Therefore, to optimize deposited ITO film characteristics, development of accurate and reliable process model is essential. For this, in this work, we developed ITO film deposition process model using neural networks and design of experiment (DOE). Developed model prediction results are compared with conventional statistical regression model and developed neural process model has been shown superior prediction results on modeling of ITO film thickness, sheet resistance, and transmittance characteristics.