• Title/Summary/Keyword: Electron-Beam Characteristics

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Development of Electron Beam Monte Carlo Simulation and Analysis of SEM Imaging Characteristics (전자빔 몬테 카를로 시물레이션 프로그램 개발 및 전자현미경 이미징 특성 분석)

  • Kim, Heung-Bae
    • Journal of the Korean Society for Precision Engineering
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    • v.29 no.5
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    • pp.554-562
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    • 2012
  • Processing of Scanning electron microscope imaging has been analyzed in both secondary electron (SE) imaging and backscattered electron (BSE) image. Because of unique characteristics of both secondary electron and backscattered electron image, mechanism of imaging process and image quality are quite different each other. For the sake of characterize imaging process, Monte Carlo simulation code have been developed. It simulates electron penetration and depth profile in certain material. In addition, secondary electron and backscattered electron generation process as well as their spatial distribution and energy characteristics can be simulated. Geometries that has fundamental feature have been imaged using the developed Monte Carlo code. Two, SE and BSE images generation process will be discussed. BSE imaging process can be readily used to discriminate in both material and geometry by simply changing position and direction of BSE detector. The developed MC code could be useful to design BSE detector and their position. Furthermore, surface reconstruction technique is possibly developed at the further research efforts. Basics of Monte Carlo simulation method will be discussed as well as characteristics of SE and BSE images.

A study on machining characteristics in vaporized amplification sheets of electron beam (증기화 증폭시트를 적용한 전자빔 가공 특성 연구)

  • Kim, Seong Hyun;Jung, Sung Taek;Kim, Hyun Jeong;Baek, Seung Yub
    • Design & Manufacturing
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    • v.12 no.2
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    • pp.46-50
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    • 2018
  • Recently, as machine components and products are getting smaller, it is demanded to develop superprecision production technologies multilaterally. Along with the advancement of production technology, people are paying keener attention to the development of eco-friendly technology and efficient processing technology. Particularly, in many industries related to automobiles, shipbuilding, or airplane components, it is demanded to obtain technology to process multiple micro-holes. On account of this trend, micro-hole processing employing high-power electron beams is rising nowadays, and more interest is being shown in it, too. In Korea, however, the process of manufacturing vaporized amplification sheets influencing high-power electron beam processing technology and the processability considerably has not been developed sufficiently yet. Therefore, this study has applied vaporized amplification sheets manufactured to analyze the processability of high-power electron beams and examine necessity for vaporized amplification sheets.

Analysis of PDP Discharging Properties Depending on Electron Beam Evaporation Rate of MgO Layer (MgO의 전자선 증착율에 따른 PDP 방전 특성 분석)

  • Kim, Yong-Jae;Kwon, Sang-Jik
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.20 no.8
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    • pp.716-719
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    • 2007
  • The effects of the evaporation rate of MgO films using an electron beam on the MgO properties and the discharge characteristics of a plasma display panel (PDP) were investigated and analyzed. MgO films were deposited with the various MgO evaporation rates. The MgO properties such as the crystal orientation, the surface roughness, and the film structure were inspected using XRD (X-ray diffraction), AFM (atomic force microscopy). From the experiments and Paschen law, the maximum value of the secondary electron emission coefficient $({\gamma})$ was obtained at the evaporation rate of $5{\AA}/sec$. The XRD results and cathode-luminescence (CL) spectra show the ${\gamma}$ values are correlated with F/F+ centers of the molecular structure of MgO films. The minimum firing voltage and the maximum luminous efficiency were obtained at an evaporation rate of $5{\AA}/sec$. In the MgO film deposited at $5{\AA}/sec$, the (200) orientation and F+ center were most intensive.

Electron Temperature, Plasma Density and Luminous Efficiency in accordance with Discharge Time in coplanar AC PDPs

  • Jeong, S.H.;Moon, M.W.;Oh, P.Y.;Jeong, J.M.;Ko, B.D.;Park, W.B.;Lee, J.H.;Lim, J.E.;Lee, H.J.;Han, Y.G.;Son, C.G.;Lee, S.B.;Yoo, N.L.;Choi, E.H.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07b
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    • pp.1203-1206
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    • 2005
  • Electron temperature and plasma density in coplanar alternating-current plasma display panels (AC-PDP's) have been experimentally investigated in accordance with discharge time by a micro-probe in this experiment. The resolution of a step mortor to move in micro-Langmuir probe is 10um.[1-3] The used gas in this experiment is He-Ne-Xe (4%) mixure gas. And sustain voltage is 320V which is above of firing voltage for degradation. The electron temperature and plasma density can be obtained from current-voltage (I-V) characteristics of micro Langmuir probe, in which negative to positive bias voltage was applied to the probe. And Efficiency is calculated by formula related discharge power and light emission. Those experiments operated as various discharge time ($0{\sim}72$ Hours). As a result of this experiment, Electron Temperature was increased from 2eV to 5eV after discharge running time of 20 hours and saturates beyond 20 hours. The plasma density is inversely proportional to the square root of electron temperature. So the plasma density was decreased from $1.8{\times}10^{12}cm^{-3}$ to $8{\times}10^{11}cm^{-3}$ at above discharge running time. And the Efficiency was reduced to 70% at 60hours of discharge running time.

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Interval Scan Inspection Technique for Contact Failure of Advanced DRAM Process using Electron Beam-Inspection System

  • Oh, J.H.;Kwon, G.;Mun, D.Y.;Kim, D.J.;Han, I.K.;Yoo, H.W.;Jo, J.C.;Ominami, Y.;Ninomiya, T.;Nozoe, M.
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.12 no.1
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    • pp.34-40
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    • 2012
  • We have developed a highly sensitive inspection technique based on an electron beam inspection for detecting the contact failure of a poly-Si plugged layer. It was difficult to distinguish the contact failure from normal landing plugs with high impedance. Normally, the thermal annealing method has been used to decrease the impedance of poly-Si plugs and this method increases the difference of charged characteristics and voltage contrast. However, the additional process made the loss of time and broke down the device characteristics. Here, the interval scanning method without thermal annealing was effectively applied to enhance the difference of surface voltage between well-contacted poly-Si plugs and incomplete contact plugs. It is extremely useful to detect the contact failures of non-annealed plug contacts with high impedance.

Dose Characteristics of Total-Skin Electron-Beam Irradiation with Six-Dual Electron Fields (Six-Dual 전자선 조사면에 의한 전신 피부 조사의 선량 특성)

  • Choi, Tae-Jin;Kim, Jin-Hee;Kim, Ok-Bae
    • Radiation Oncology Journal
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    • v.16 no.3
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    • pp.337-345
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    • 1998
  • Purpose : To obtain the uniform dose at limited depth to entire surface of the body, the dose characteristics of degraded electron beam of the large target-skin distance and the dose distribution of the six-dual electron fields were investigated Materials and Method : The experimental dose distributions included the depth dose curve, spatial dose and attenuated electron beam were determined with 300 cm of target-skin distance (TSD) and full collimator size (35*35 $cm^2$ on TSD 100 cm) in 4 MeV electron beam energy. Actual collimated field size of 105 cm * 105 cm at the distance of 300 cm could include entire hemibody. A patient was standing on step board with hands up and holding the pole to stabilize his/her positions for the six-dual fields technique. As a scatter-degrader, 0.5 cm of acrylic plate was inserted at 20 cm from the body surface on the electron beam path to induce ray scattering and to increase the skin dose. Results : The full width at half maximum(FWHM) of dose profile was 130 cm in large field of 105*105 $cm^2$ The width of $100\pm10\%$ of the resultant dose from two adjacent fields which were separated at 25 cm from field edge for obtaining the dose unifomity was extended to 186 cm. The depth of maximum dose lies at 5 mm and the 80$\%$ depth dose lies between 7 and 8 mm for the degraded electron beam by using the 0.5 cm thickness of acrylic absorber. Total skin electron beam irradiation (TSEBI) was carried out using the six dual fields has been developed at Stanford University. The dose distribution in TSEBI showed relatively uniform around the flat region of skin except the protruding and deeply curvatured portion of the body, which showed excess of dose at the former and less dose at the latter. Conclusion : The percent depth dose, profile curves and superimposed dose distribution were investigated using the degraded electron beam through the beam absorber. The dose distribution obtained by experiments of TSEBI showed within$\pm10\%$ difference except the protruding area of skin which needs a shield and deeply curvatured region of skin which needs boosting dose.

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Design and Analysis of an Objective Lens for a Scanning Electron Microscope by Coupling FE Analysis and Ray Tracing (유한요소해석과 광선추적을 연계한 주사전자 현미경 대물렌즈의 설계 및 해석)

  • Park, Keun;Lee, Jae-Jin;Park, Man-Jin;Kim, Dong-Hwan;Jang, Dong-Young
    • Journal of the Korean Society for Precision Engineering
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    • v.26 no.11
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    • pp.92-98
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    • 2009
  • The scanning electron microscope (SEM) contains an electron optical system in which electrons are emitted and moved to form a focused beam, and generates secondary electrons from the specimen surfaces, eventually making an image. The electron optical system usually contains two condenser lenses and an objective lens. The condenser lenses generate a magnetic field that forces the electron beams to form crossovers at desired locations. The objective lens then focuses the electron beams on the specimen. The present study covers the design and analysis of an objective lens for a thermionic SEM. A finite element (FE) analysis for the objective lens is performed to analyze its magnetic characteristics for various lens designs. Relevant beam trajectories are also investigated by tracing the ray path of the electron beams under the magnetic fields inside the objective lens.