• Korean Chemical Engineering Research
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• 제60권4호
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• pp.574-581
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• 2022

리튬-황 전지의 기능성 중간층으로 그래핀과 Mo₂C/Mo₂N 나노입자로 구성된 나노섬유(Mo₂C/Mo₂N rGO NFs)를 사용하였다. Mo₂C/Mo₂N 나노입자는 섬유 구조 내 고르게 분산되어 리튬 폴리설파이드의 화학적 흡착을 위한 활성 사이트 역할을 함으로써 전해질로의 용출을 효과적으로 억제하였다. 또한 구조 내 매트릭스로 구성된 그래핀 나노시트는 충방전이 진행되는 동안 이온 및 전자의 빠른 이동을 보장할 뿐만 아니라 반응 시 산화/환원 반응을 원활하게 하여 높은 리튬 폴리설파이드의 재사용을 보장하였다. 그 결과 Mo₂C/Mo₂N rGO NFs로 코팅된 분리막을 기능성 중간층으로 사용, 순수 황 전극(황 함량 70 wt%, 황 로딩 2.1 mg cm^-2)으로 제작된 리튬-황 전지는 0.1 C에서 400회 충방전 후 476 mA h g^-1의 안정적인 방전 용량을 나타냈으며, 1.0 C의 높은 전류밀도에서도 574 mA h g^-1의 방전용량을 나타내었다. 본 연구에서 제안된 나노구조체 합성 전략은 고성능 리튬-황 전지 용 기능성 중간층 및 다양한 에너지 저장 소재분야로의 확장이 가능하다.

• The Plant Pathology Journal
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• 제38권5호
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• pp.541-549
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• 2022

Potato late blight caused by Phytophthora infestans is a destructive disease in Korea. To elucidate the genomic variation of the mitochondrial (mt) genome, we assembled its complete mt genome and compared its sequence among different haplotypes. The mt genome sequences of four Korean P. infestans isolates were revealed by Illumina HiSeq. The size of the circular mt genome of the four major genotypes, KR_1_A1, KR_2_A2, SIB-1, and US-11, was 39,872, 39,836, 39,872, and 39,840 bp, respectively. All genotypes contained the same 61 genes in the same order, comprising two RNA-encoding genes, 16 ribosomal genes, 25 transfer RNA, 17 genes encoding electron transport and ATP synthesis, 11 open reading frames of unknown function, and one protein import-related gene, tatC. The coding region comprised 91% of the genome, and GC content was 22.3%. The haplotypes were further analyzed based on sequence polymorphism at two hypervariable regions (HVRi), carrying a 2 kb insertion/deletion sequence, and HVRii, carrying 36 bp variable number tandem repeats (VNTRs). All four genotypes carried the 2 kb insertion/deletion sequence in HVRi, whereas HVRii had two VNTRs in KR_1_A1 and SIB-1 but three VNTRs in US-11 and KR_2_A2. Minimal spanning network and phylogenetic analysis based on 5,814 bp of mtDNA sequences from five loci, KR_1_A1 and SIB-1 were classified as IIa-6 haplotype, and isolates KR_1_A2 and US-11 as haplotypes IIa-5 and IIb-2, respectively. mtDNA sequences of KR_1_A1 and SIB-1 shared 100% sequence identity, and both were 99.9% similar to those of KR_2_A2 and US-11.

• 운동영양학회지
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• 제16권2호
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• pp.65-71
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• 2012

Oxygen is the final acceptor of electron transport from fat and carbohydrate oxidation, which is the rate-limiting factor for cellular ATP production. Under altitude hypoxia condition, energy reliance on anaerobic glycolysis increases to compensate for the shortfall caused by reduced fatty acid oxidation [1]. Therefore, training at altitude is expected to strongly influence the human metabolic system, and has the potential to be designed as a non-pharmacological or recreational intervention regimen for correcting diabetes or related metabolic problems. However, most people cannot accommodate high altitude exposure above 4500 M due to acute mountain sickness (AMS) and insulin resistance corresponding to a increased levels of the stress hormones cortisol and catecholamine [2]. Thus, less stringent conditions were evaluated to determine whether glucose tolerance and insulin sensitivity could be improved by moderate altitude exposure (below 4000 M). In 2003, we and another group in Austria reported that short-term moderate altitude exposure plus endurance-related physical activity significantly improves glucose tolerance (not fasting glucose) in humans [3,4], which is associated with the improvement in the whole-body insulin sensitivity [5]. With daily hiking at an altitude of approximately 4000 M, glucose tolerance can still be improved but fasting glucose was slightly elevated. Individuals vary widely in their response to altitude challenge. In particular, the improvement in glucose tolerance and insulin sensitivity by prolonged altitude hiking activity is not apparent in those individuals with low baseline DHEA-S concentration [6]. In addition, hematopoietic adaptation against altitude hypoxia can also be impaired in individuals with low DHEA-S. In short-lived mammals like rodents, the DHEA-S level is barely detectable since their adrenal cortex does not appear to produce this steroid [7]. In this model, exercise training recovery under prolonged hypoxia exposure (14-15% oxygen, 8 h per day for 6 weeks) can still improve insulin sensitivity, secondary to an effective suppression of adiposity [8]. Genetically obese rats exhibit hyperinsulinemia (sign of insulin resistance) with up-regulated baseline levels of AMP-activated protein kinase and AS160 phosphorylation in skeletal muscle compared to lean rats. After prolonged hypoxia training, this abnormality can be reversed concomitant with an approximately 50% increase in GLUT4 protein expression. Additionally, prolonged moderate hypoxia training results in decreased diffusion distance of muscle fiber (reduced cross-sectional area) without affecting muscle weight. In humans, moderate hypoxia increases postprandial blood distribution towards skeletal muscle during a training recovery. This physiological response plays a role in the redistribution of fuel storage among important energy storage sites and may explain its potent effect on changing body composition. Conclusion: Prolonged moderate altitude hypoxia (rangingfrom 1700 to 2400 M), but not acute high attitude hypoxia (above 4000 M), can effectively improve insulin sensitivity and glucose tolerance for humans and antagonizes the obese phenotype in animals with a genetic defect. In humans, the magnitude of the improvementvaries widely and correlates with baseline plasma DHEA-S levels. Compared to training at sea-level, training at altitude effectively decreases fat mass in parallel with increased muscle mass. This change may be associated with increased perfusion of insulin and fuel towards skeletal muscle that favors muscle competing postprandial fuel in circulation against adipose tissues.

• IMMUNE NETWORK
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• 제20권5호
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• pp.40.1-40.15
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• 2020

The protein encoded by the Gene Associated with Retinoid-Interferon-Induced Mortality-19 (GRIM-19) is located in the mitochondrial inner membrane and is homologous to the NADH dehydrogenase 1-alpha subcomplex subunit 13 of the electron transport chain. Multiple sclerosis (MS) is a demyelinating disease that damages the brain and spinal cord. Although both the cause and mechanism of MS progression remain unclear, it is accepted that an immune disorder is involved. We explored whether GRIM-19 ameliorated MS by increasing the levels of inflammatory cytokines and immune cells; we used a mouse model of experimental autoimmune encephalomyelitis (EAE) to this end. Six-to-eight-week-old male C57BL/6, IFNγ-knockout (KO), and GRIM-19 transgenic mice were used; EAE was induced in all strains. A GRIM-19 overexpression vector (GRIM19 OVN) was electrophoretically injected intravenously. The levels of Th1 and Th17 cells were measured via flow cytometry, immunofluorescence, and immunohistochemical analysis. IL-17A and IFNγ expression levels were assessed via ELISA and quantitative PCR. IL-17A expression decreased and IFNγ expression increased in EAE mice that received injections of the GRIM-19 OVN. GRIM19 transgenic mice expressed more IFNγ than did wild-type mice; this inhibited EAE development. However, the effect of GRIM-19 overexpression on the EAE of IFNγ-KO mice did not differ from that of the empty vector. GRIM-19 expression was therapeutic for EAE mice, elevating the IFNγ level. GRIM-19 regulated the Th17/Treg cell balance.

• 청정기술
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• 제30권3호
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• pp.220-227
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• 2024

고용량 및 고에너지 밀도의 리튬 이온 전지 수요가 증가함에 따라 기존 흑연 음극을 대체할 고용량 실리콘 음극이 주목받고 있다. 하지만, 실리콘은 충·방전 동안 ~360%의 큰 부피 팽창 및 낮은 이온 전도도와 전기 전도도로 인해 저조한 수명 및 율속 특성을 나타낸다. 해당 문제를 해결하기 위해, 본 연구에서는 Pluronic-F127을 활용한 단일 분무 열분해 공정을 통해 코어@쉘 구조의 실리콘@탄소 나노 분말(Si@C NPs)을 합성한다. 분무 용액 내 Pluronic-F127은 실리콘 나노 입자/dextrin 응집체 형성 억제와 동시에 열분해됨으로써 나노 분말 합성에 기여한다. 또한 dextrin으로부터 유래된 비정질 탄소는 실리콘 입자 표면에 코팅되어 소재 내 전자 이동 경로 역할과 실리콘 나노 입자간 전기적 접촉을 강화한다. 그 결과, Si@C NPs는 1.0 A g^-1에서 50 사이클 후 1,912 mA h g^-1의 방전 용량 및 높은 율속 특성(3.0 A g^-1에서 방전 용량 1,493 mA h g^-1)을 나타내었다. 따라서 본 연구에서 제시한 분무 열분해 공정 기반 실리콘@탄소 복합 나노 분말 합성 전략은 실리콘 음극 소재 성능 향상에 새로운 방향을 제시할 수 있을 것으로 기대한다.

• 한국해양환경ㆍ에너지학회지
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• 제16권1호
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• pp.9-16
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• 2013

해수 중 용존 이산화탄소 농도 증가가 두토막눈썹참갯지렁이(Perinereis aibuhitensis)의 세포내 에너지 할당(CEA, cellular energy allocation)에 미치는 영향을 알아보고자 0.39(대조구=390 ppmv), 3.03 (=3,030 ppmv), 10.3 (=10,300 ppmv), 그리고 30.1 (=30,100 ppmv) mM의 이산화탄소 농도를 갖는 해수에 청충을 7일간 노출하여 세포 에너지와 세포 전자전달체계(ETS, electro transport system) 활성을 분석하였다. 실험생물의 지질, 당질, 그리고 단백질 함량과 ETS로부터 에너지 소비율을 계산하여 CEA를 산출한 결과 이산화탄소 농도가 증가함에 따라 CEA가 감소하였다. 지질의 경우 이산화탄소 농도가 증가 할수록 지질함량도 증가하였으며, 당질은 이산화탄소 농도가 3.03 mM인 실험구에서 가장 낮고 10.3 mM인 실험구에서 일부 증가하였으나 가장 높은 농도에서는 다시 감소하는 경향을 보였다. 단백질은 이산화탄소 농도가 3.03 mM인 실험구에서는 영향이 없었지만, 10.3 mM 이상의 농도에서부터 유의한 수준의 CEA 감소가 나타났다. 에너지 소비율은 이산화탄소 최고 농도에서만 유의한 증가 현상이 나타났지만, CEA는 대조구와 비교해 3.03 mM의 실험구부터 감소하였다. 이산화탄소는 해수중 pH를 낮추어 시험생물에 스트레스를 증가시키고, 세포내 에너지 할당변화에 영향을 미친 것으로 판단된다. 해산 갯지렁이를 이용한 CEA 평가결과는 대기 중 이산화탄소의 증가 또는 이산화탄소 저감을 위해 추진되고 있는 해양 지중저장사업 과정에서 누출된 이산화탄소의 해양생태계 위해성을 예측하는 자료로 이용될 수 있을 것으로 판단된다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.284-284
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• 2016

Topological insulator (TI) is a bulk-insulating material with topologically protected Dirac surface states in the band gap. In particular, $Bi_2Se_3$ attracted great attention as a model three-dimensional TI due to its simple electronic structure of the surface states in a relatively large band gap (~0.3 eV). However, experimental efforts using $Bi_2Se_3$ have been difficult due to the abundance of structural defects, which frequently results in the bulk conduction being dominant over the surface conduction in transport due to the bulk doping effects of the defect sites. One promising approach in avoiding this problem is to reduce the structural defects by heteroepitaxially grow $Bi_2Se_3$ on a substrate with a compatible lattice structure, while also preventing surface degradation by encapsulating the pristine interface between $Bi_2Se_3$ and the substrate in a clean growth environment. A particularly promising choice of substrate for the heteroepitaxial growth is hexagonal boron nitride (h-BN), which has the same two-dimensional (2D) van der Waals (vdW) layered structure and hexagonal lattice symmetry as $Bi_2Se_3$. Moreover, since h-BN is a dielectric insulator with a large bandgap energy of 5.97 eV and chemically inert surfaces, it is well suited as a substrate for high mobility electronic transport studies of vdW material systems. Here we report the heteroepitaxial growth and characterization of high quality topological insulator $Bi_2Se_3$ thin films prepared on h-BN layers. Especially, we used molecular beam epitaxy to achieve high quality TI thin films with extremely low defect concentrations and an ideal interface between the films and substrates. To optimize the morphology and microstructural quality of the films, a two-step growth was performed on h-BN layers transferred on transmission electron microscopy (TEM) compatible substrates. The resulting $Bi_2Se_3$ thin films were highly crystalline with atomically smooth terraces over a large area, and the $Bi_2Se_3$ and h-BN exhibited a clear heteroepitaxial relationship with an atomically abrupt and clean interface, as examined by high-resolution TEM. Magnetotransport characterizations revealed that this interface supports a high quality topological surface state devoid of bulk contribution, as evidenced by Hall, Shubnikov-de Haas, and weak anti-localization measurements. We believe that the experimental scheme demonstrated in this talk can serve as a promising method for the preparation of high quality TI thin films as well as many other heterostructures based on 2D vdW layered materials.

• 생물환경조절학회지
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• 제30권4호
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• pp.401-409
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• 2021

본 연구는 반밀폐형 토마토 재배 온실에서 광합성율 극대화를 위한 적정 탄산가스 시비 농도를 구명하고자 광합성 모델을 이용하여 잎의 최대 카복실화율(V_cmax), 최대 전자전달속도(J_max), 열파괴, 잎 호흡 등을 계산하고 실제 측정값과 비교하였다. 다양한 광도(PAR 200µmol·m^-2·s^-1 to 1500µmol·m^-2·s^-1)와 온도(20℃ to 35℃) 조건에서 CO₂ 농도에 대한 A-C_i curve는 광합성 측정 기기를 사용하여 측정하였고, 모델링 방정식으로 아레니우스 함수값(Arrhenius function), 순광합성율(net CO₂ assimilation, A_n), 열파괴(thermal breakdown), R_d(주간의 잎호흡)를 계산하였다. 엽온이 30℃ 이상으로 상승하였을 때 J_max, An 및 thermal breakdown 예측치가 모두 감소하였고, 예측 J_max의 가장 최고점은 엽온 30℃였으며 그 이상의 온도에서는 감소하였다. 생장점 아래 5번째 잎의 광합성율은 PAR 200-400µmol·m^-2·s^-1 수준에서는 CO₂ 600ppm, PAR 600-800µmol·m^-2·s^-1 수준에서는 CO₂ 800ppm, PAR 1000µmol·m^-2·s^-1 수준에서는 CO₂ 1000ppm, PAR 1200-1500µmol·m^-2·s^-1 수준에서는 CO₂ 1500ppm을 공급했을 때 포화점에 도달하였다. 앞으로 광합성 모델식을 활용하여 과채류 온실 재배 시 광합성을 높일 수 있는 탄산시비 농도를 추정할 수 있을 것으로 판단된다.

• Radiation Oncology Journal
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• 제19권1호
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• pp.66-73
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• 2001

목적 : 붕소-중성자 포획치료법(Boron Neutron Capture Therapy, BNCT)을 위해 원자력병원 싸이클로트론에서 발생되는 최대에너지 34.4 MeV의 속중성자(Fast neutron)를 70 cm 파라핀으로 감속시킨 후 선량 특성을 조사하였다. 그 결과를 토대로 열외중성자(Epithermal neutron) 선량 측정법에 대한 프로토콜을 확립하여 원자로에서 방출되는 열외 중성자 선량 특성 평가의 기초를 삼고, 가속기를 이용한 BNCT 연구에 대한 타당성 여부를 조사하고자 한다. 대상 및 방법 : 공기 중 선량 및 물질 내 선량 분포 측정을 위해 Unidos 10005 (PTW, Germany) 전기계와 조직 등가 물질인 A-150 플라스틱으로 제작된 IC-17 (Far West, USA) 및 IC-18, ElC-1 이온함을 사용하였고, 감마선의 측정을 위해서는 마그네슘으로 제작된 IC-l7M 이온함을 이용하였으며 조직등가 기체와 아르곤 기체를 분당 5cc 씩 주입하며 측정하였다. 중성자, 광자, 전자가 혼합된 장의 모의 수송 해석을 위해 이용되는 Monte Carlo N-Particle (MCNP) transport code를 사용하여 2차원적 선량 분포 및 에너지 분포를 계산하였으며 이 결과를 측정값과 비교하였다. 결과 : BNCT에서의 유효 치료 깊이인 물 팬텀 4 cm에서의 선량은 치료기 1 MU 당 $6.47\times10^{-3}\;cGy$로 미세하였으며, 이때 감마 오염도(contamination)는 $65.2{\pm}0.9\%$로 중성자보다는 감마선에 의한 선량 기여분이 우세하였다. 깊이에 따른 선량 분포 특성에서는 중성자 선량은 선형적으로 감쇠 되었고, 감마선량은 지수적으로 보다 급격히 감쇠되는 경향을 보였으며 전체 선량의 $D_{20}/D_{10}$은 0.718 이었다. MCNP에 의한 에너지 분포 전산 계산의 결과 2.87 MeV 이하에서 중성자 피크가 나타났으며, 저에너지 영역에서는 감마선이 연속적으로 분포되는 양상을 보였다. 결론 : 벽 물질이 서로 다른 두 개의 이온함을 사용한 직접 선량 측정과 MCNP 전산 시뮬레이션을 이용한 공간 선량분포 계산으로 미세 속중성자 빔에 대한 선량 특성을 파악할 수 있었으며, 원자로 열외중성자 주(Epithermal neutron column)에 대한 선량 평가 자료로 확보하였다. 아울러 가속기에 대한 연구가 진행되어 고전압, 고전류를 발생시키는 전원 공급장치와 표적핵(Target) 물질이 개발되고 비스무스나 납 등에 의해 감마 오염도를 줄일 경우, 싸이크로트론에 의한 보론-중성자 포획치료도 가능해질 것으로 판단된다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.80-81
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• 2012

Recently, one of the critical issues in the etching processes of the nanoscale devices is to achieve ultra-high aspect ratio contact (UHARC) profile without anomalous behaviors such as sidewall bowing, and twisting profile. To achieve this goal, the fluorocarbon plasmas with major advantage of the sidewall passivation have been used commonly with numerous additives to obtain the ideal etch profiles. However, they still suffer from formidable challenges such as tight limits of sidewall bowing and controlling the randomly distorted features in nanoscale etching profile. Furthermore, the absence of the available plasma simulation tools has made it difficult to develop revolutionary technologies to overcome these process limitations, including novel plasma chemistries, and plasma sources. As an effort to address these issues, we performed a fluorocarbon surface kinetic modeling based on the experimental plasma diagnostic data for silicon dioxide etching process under inductively coupled C4F6/Ar/O2 plasmas. For this work, the SiO2 etch rates were investigated with bulk plasma diagnostics tools such as Langmuir probe, cutoff probe and Quadruple Mass Spectrometer (QMS). The surface chemistries of the etched samples were measured by X-ray Photoelectron Spectrometer. To measure plasma parameters, the self-cleaned RF Langmuir probe was used for polymer deposition environment on the probe tip and double-checked by the cutoff probe which was known to be a precise plasma diagnostic tool for the electron density measurement. In addition, neutral and ion fluxes from bulk plasma were monitored with appearance methods using QMS signal. Based on these experimental data, we proposed a phenomenological, and realistic two-layer surface reaction model of SiO2 etch process under the overlying polymer passivation layer, considering material balance of deposition and etching through steady-state fluorocarbon layer. The predicted surface reaction modeling results showed good agreement with the experimental data. With the above studies of plasma surface reaction, we have developed a 3D topography simulator using the multi-layer level set algorithm and new memory saving technique, which is suitable in 3D UHARC etch simulation. Ballistic transports of neutral and ion species inside feature profile was considered by deterministic and Monte Carlo methods, respectively. In case of ultra-high aspect ratio contact hole etching, it is already well-known that the huge computational burden is required for realistic consideration of these ballistic transports. To address this issue, the related computational codes were efficiently parallelized for GPU (Graphic Processing Unit) computing, so that the total computation time could be improved more than few hundred times compared to the serial version. Finally, the 3D topography simulator was integrated with ballistic transport module and etch reaction model. Realistic etch-profile simulations with consideration of the sidewall polymer passivation layer were demonstrated.