Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 2016.02a
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- Pages.284-284
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- 2016
High quality topological insulator Bi2Se3 grown on h-BN using molecular beam epitaxy
- Park, Joon Young (Department of Physics and Astronomy, Institute of Applied Physics, and Research Institute of Advanced Materials (RIAM), Seoul National University) ;
- Lee, Gil-Ho (Department of Physics, Harvard University) ;
- Jo, Janghyun (Department of Materials Science and Engineering, Seoul National University) ;
- Cheng, Austin K. (Department of Physics, Harvard University) ;
- Yoon, Hosang (Department of Physics and Astronomy, Institute of Applied Physics, and Research Institute of Advanced Materials (RIAM), Seoul National University) ;
- Watanabe, Kenji (Advanced Materials Laboratory, National Institute for Materials Science) ;
- Taniguchi, Takashi (Advanced Materials Laboratory, National Institute for Materials Science) ;
- Kim, Miyoung (Department of Materials Science and Engineering, Seoul National University) ;
- Kim, Philip (Department of Physics, Harvard University) ;
- Yi, Gyu-Chul (Department of Physics and Astronomy, Institute of Applied Physics, and Research Institute of Advanced Materials (RIAM), Seoul National University)
- Published : 2016.02.17
Abstract
Topological insulator (TI) is a bulk-insulating material with topologically protected Dirac surface states in the band gap. In particular,