• 제목/요약/키워드: Electron transport

검색결과 987건 처리시간 0.027초

Polyvinylalcohol에 고정한 시금치 엽록체와 백금 촉매를 이용한 광수소 발생 (Photoproduction of Hydrogen in Polyvinylalcohol-Iimmobilized Spinach Chloroplsats with Platinum Catalysts)

  • 박인호
    • Journal of Plant Biology
    • /
    • 제36권4호
    • /
    • pp.313-319
    • /
    • 1993
  • Photoproduction of hydrogen by free and polyvinylalcohol (PVA)-immobilized spinach chloroplasts was investigated. Immobilization of chloroplast with PVA increased the functional stability of the chloroplast during storage. PVA-immobilized chloroplasts preserved photosynthetic electron transport activity much better than free chloroplasts. The hydrogen production of free chloroplast decreased to 17% of initial activity after storage of six days. The hydrogen production of the PVA-immobilized chloroplast, however, showed 44% of initial activity after storage of 15 days. The maximal rate of hydrogen production was accomplished at 2$^{\circ}C$ under the light intensity above 116 $\mu$E.m-2.s-1. The amount of hydrogen produced was proportional to the chlorophyll concentration. The hydrogen production was inhibited by DCMU treatment, indicating hydrogen production is dependent on photosynthetic electron transport. These results suggest that PVA is a good candidate for the immobilization matrix of chloroplasts for the photoproduction of hydrogen.

  • PDF

인삼 틸라코이드 막의 지질과 산화 (Lipid Peroxidation of Ginseng Thylakoid Membrane)

  • 양덕조
    • Journal of Ginseng Research
    • /
    • 제14권2호
    • /
    • pp.135-141
    • /
    • 1990
  • In order to elucidate the mechanism of the leaf-burning disease of ginseng (Panax ginseng C.A. Meyer), the relationships between thylakoid membrane peroxidation and chlorophyll bleaching were investigated in comparison with the ones of soybean (Glycine max L). When I measured the rate of lipid peroxidation in the thylakoids of ginseng and soybean by irradiation of light(60 w.m-2), it was identified that, the remarkably lower rate of lipid peroxidation was found in the ginseng thylakoid than the case of soybean. When lipid peroxidation of ginseng thylakoid was induced in the dark, chlorophyll contents of thylakoid was not changed. The results suggest that lipid peroxidation does not affect the chlorophyll bleaching in ginseng thylakoid. Thylakoid membrane peroxidation as well as chlorophyll bleaching was closely related with photosynthetic electron transport. But, according to the quenching experiment active oxygen species induced lipid peroxidation may be different species in the case of chlorophyll bleaching.

  • PDF

Novel transport materials for high-performance fluorescent and phosphorescent OLEDs

  • Bohm, E.;Anemian, R.;Busing, A.;Fortte, R.;Heil, H.;Kaiser, J.;Krober, J.;Leu, S.;Mujica-Fernaud, T.;Parham, A.;Pflumm, C.;Voges, F.
    • Journal of Information Display
    • /
    • 제12권3호
    • /
    • pp.141-144
    • /
    • 2011
  • To improve the performance of blue fluorescent and green phosphorescent organic light-emitting diode devices, Merck developed novel green phosphorescent host and electron-transporting materials. The newly developed electron-transporting material improves the external quantum efficiency of blue fluorescent devices up to 8.7%, with an excellent lifetime. In combination with the newly developed host materials, the efficiency of green phosphorescent devices can be improved by a factor of 1.7, and the lifetime by a factor of 7.

High efficiency and long lifetime green OLED with a new electron transport material and a three-component RGB white OLED for full-color display applications.

  • Tokairin, Hiroshi;Kuma, Hitoshi;Yamamoto, Hiroshi;Funahashi, Masakazu;Fukuoka, Kenichi;Hosokawa, Chishio
    • 한국정보디스플레이학회:학술대회논문집
    • /
    • 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
    • /
    • pp.1138-1142
    • /
    • 2005
  • We achieved a highly efficient green OLED with an efficiency of 30cd/A by using a new electron transport material and optimizing the device structure. The luminous efficiency was 16.8lm/W at $3000cd/m^2$ and the lifetime was over 60,000hr at an initial luminance of $1000cd/m^2$. Furthermore, we obtained a threecomponent RGB white OLED by using the highly efficient green material. This RGB white OLED shows more excellent color reproducibility for full color displays with color filters, compared to a twocomponent white OLED.

  • PDF

Importance of Backscattering Effects in Ballistic Quantum Transport in Mesoscopic Ring Structures

  • Shin, Min-Cheol;Park, Kyoung-Wan;Lee, Seong-Jae;Lee, El-Hang
    • ETRI Journal
    • /
    • 제18권4호
    • /
    • pp.301-313
    • /
    • 1997
  • We have found that in the ballistic electron transport in a ring structure, the junction-backscattering contribution is critical for all the major features of the Aharonov-Bohm-type interference patterns. In particular, by considering the backscattering effect, we present new and clear interpretation about the physical origin of the secondary minima in the electrostatic Aharonov-Bohm effect and that of the h/2e oscillations when both the electric and magnetic potentials are present. We have devised a convenient scheme of expanding the conductance by the junction backscattering amplitude, which enables us to determine most important electron paths among infinitely many paths and to gain insight about their contributions to the interference patterns. Based on the scheme, we have identified various interesting interference phenomena in the ballistic ring structure and found that the backscattering effect plays a critical role in all of them.

  • PDF

The effects of As addition on the transport property of a-Se:As films using the moving photo-carrier grating technique

  • Park, Chang-Hee;Lee, Kwang-Sei;Kim, Jeong-Bae;Kim, Jae-Hyung
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
    • /
    • pp.252-253
    • /
    • 2005
  • The effects of As addition in amorphous selenium (a-Se) films on the carrier mobilities and the recombination lifetime have been studied using the moving photo-carrier grating (MPG) measurements. The electron and hole mobility, and recombination lifetime of a-Se films with arsenic (As) additions up to 1% have been obtained. We have found an increase in hole drift mobility and recombination lifetime, especially when 0.3% As is added into a-Se film, whereas electron mobility decreases with As addition due to the defect density from shallow traps.

  • PDF

Recent Progress in Flexible Perovskite Solar Cell Development

  • Ren, Xiaodong;Jung, Hyun Suk
    • 한국세라믹학회지
    • /
    • 제55권4호
    • /
    • pp.325-336
    • /
    • 2018
  • Perovskite solar cells (PSCs) are a new class of photovoltaic devices, which have attracted significant attention due to their remarkable optoelectrical properties, including high absorption coefficients, high carrier mobilities, long carrier diffusion lengths, tunable bandgaps, low cost, and facile fabrication. PSCs have reached efficiencies of 22.70% and 18.36% on rigid fluorine-doped tin oxide and poly(ethylene terephthalate) substrates, respectively; these are comparable to those of single-crystal silicon and copper-indium-gallium-selenium solar cells. Over the past eight years, the photo conversion efficiency of PSCs has been significantly improved by device-architecture adjustments, and absorber and electron/hole transport layer optimization. Each layer is important for the performance of PSCs; hence, we discuss achievements in flexible perovskite solar cells (FPSCs), covering electron/hole-transport materials, electrode materials. We give a comprehensive overview of FPSCs and put forward suggestions for their further development.

The Magnetic Field Dependence Properties of Quasi Two Dimensional Electron-piezoelectric Potential Interacting System in GaN and ZnO

  • Lee, S.H.;Sug, J.Y.;Lee, J.H.;Lee, J.T.
    • Journal of Magnetics
    • /
    • 제16권4호
    • /
    • pp.408-412
    • /
    • 2011
  • We investigated theoretically the magnetic field dependence of the quantum optical transition of qusi 2-Dimensional Landau splitting system, in GaN and ZnO. We apply the Quantum Transport theory (QTR) to the system in the confinement of electrons by square well confinement potential. We use the projected Liouville equation method with Equilibrium Average Projection Scheme (EAPS). Through the analysis of this work, we found the increasing properties of the optical Quantum Transition Line Shapes(QTLSs) which show the absorption power and the Quantum Transition Line Widths(QTLWs) with the magnetic-field in GaN and ZnO. We also found that QTLW, ${\gamma}(B)_{total}$ of GaN < ${\gamma}(B)_{total}$ of ZnO in the magnetic field region B < 25 Tesla.

Annealing에 의한 나노구조 박막의 전기적 특성 연구 (Annealing Effects on Electron Transport properties of Nanostructured Thin Film)

  • 고태준
    • 한국자기학회지
    • /
    • 제16권1호
    • /
    • pp.98-101
    • /
    • 2006
  • 결정립으로 이루어 진 나노구조 Pb 박막의 전기적 특성을 정상 면저항 측정을 통하여 연구하였다. 나노구조 박막은 저온 상의기판 위에 10nm이하의 두께로 증착되었으며, 1.3K부터 상온까지 박막의 온도를 변화시키면서 정상 면저항의 변화를 측정하였다. 열처리 온도에 따라 정상 면저항은 비 단조적하며 비가역적인 변화를 보였으며, 이러한 변화들은 열처리에 따른 나노구조 박막을 구성하고 있는 Pb 결정립의 크기변화로써 이해할 수 있다.

Effects of Channel Electron In-Plane Velocity on the Capacitance-Voltage Curve of MOS Devices

  • Mao, Ling-Feng
    • ETRI Journal
    • /
    • 제32권1호
    • /
    • pp.68-72
    • /
    • 2010
  • The coupling between the transverse and longitudinal components of the channel electron motion in NMOS devices leads to a reduction in the barrier height. Therefore, this study theoretically investigates the effects of the in-plane velocity of channel electrons on the capacitance-voltage characteristics of nano NMOS devices under inversion bias. Numerical calculation via a self-consistent solution to the coupled Schrodinger equation and Poisson equation is used in the investigation. The results demonstrate that such a coupling largely affects capacitance-voltage characteristic when the in-plane velocity of channel electrons is high. The ballistic transport ensures a high in-plane momentum. It suggests that such a coupling should be considered in the quantum capacitance-voltage modeling in ballistic transport devices.