1 |
L.F. Mao, "Temperature Dependence of the Tunneling Current in Metal-Oxide-Semiconductor Devices Due to the Coupling between the Longitudinal and Transverse Components of the Electron Thermal Energy," Appl. Phys. Lett., vol. 90, Apr. 2007, 183511.
DOI
ScienceOn
|
2 |
W. Quan, D.M. Kim, and H.D. Lee, "Quantum C-V Modeling in Depletion and Inversion: Accurate Extraction of Electrical Thickness of Gate Oxide in Deep Submicron MOSFETs," IEEE Trans. Electron Devices, vol. 49, May 2002, pp. 889-894.
DOI
ScienceOn
|
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L.F. Mao, "The Effects of the In-Plane Momentum on the Quantization of Nanometer Metal-Oxide-Semiconductor Devices Due to the Difference between the Effective Masses of Silicon and Gate Oxide," Appl. Phys. Lett., vol. 91, Sept. 2007, 123519.
DOI
ScienceOn
|
4 |
K.J. Yang and C. Hu, "MOS Capacitance Measurement for High-Leakage Thin Dielectrics," IEEE Trans. Electron Devices, vol. 46, July 1999, pp. 1500-1501.
DOI
ScienceOn
|
5 |
L.F. Mao, "The Effects of the Injection-Channel Velocity on the Gate Leakage Current of Nanoscale MOSFETs," IEEE Electron Device Lett., vol. 28, 2007, pp. 161-163.
DOI
|
6 |
M.J. van Dort, P.H. Woerlee, and A.J. Walker, "A Simple Model for Quantization Effects in Heavily-Doped Silicon MOSFETs at Inversion Conditions," Solid-State Electron., vol. 37, Mar. 1994, pp. 411-414.
DOI
ScienceOn
|
7 |
G.L. Snider, I.H. Tan, and E.L. Hu, "Electron States in Mesa-Etched One-Dimensional Quantum Well Wires," J. App. Phys., vol. 68, Sept. 1990, pp. 2849-2853.
DOI
|
8 |
I.H. Tan et al., "A Self-Consistent Solution of Schrodinger-Poisson Equations Using a Nonuniform Mesh," J. App. Phys., vol. 68, Oct. 1990, pp. 4071-4076.
DOI
|
9 |
M. Gupta, "Ballistic MOSFETs, the Ultra Scaled Transistors," IEEE Potentials, vol. 21, Dec. 2002-Jan. 2003, pp. 13-16.
|
10 |
Z. Ren and M. Lundstram, "Simulation of Nanoscale MOSFETs: A Scattering Theory Interpretation," Superlattices and Microstructures, vol. 27, 2000, pp. 177-189.
DOI
ScienceOn
|
11 |
Y. Li et al., "Numerical Simulation of Quantum Effects in High-k Gate Dielectrics MOS Structures Using Quantum Mechanical Models," Comput. Phys. Commun., vol. 147, Aug. 2002, pp. 214-217.
DOI
ScienceOn
|
12 |
E.H. Nicollian and J.R. Brews, MOS Physics and Technology, New York: J. Wiley and Sons, 1982.
|
13 |
S.M. Sze, Physics of Semiconductor Devices, 2nd ed., New York: John Wiley & Sons, 1981, p. 850.
|
14 |
L.F. Mao and Z. Wang, "An Analytical Approach for Studying the Resonant States in Mesoscopic Devices Using the Phase Coherence of Electron Waves," Superlattices and Microstructures (2007), vol. 43, Mar. 2008, pp. 168-179.
DOI
ScienceOn
|
15 |
F. Assaderaghi et al., "Saturation Velocity and Velocity Overshoot of Inversion Layer Electrons and Holes," IEDM Tech. Dig., 1994, pp. 479-482.
|
16 |
C.H. Choi et al., "MOS C-V Characterization of Ultrathin Gate Oxide Thickness (1.3-1.8 nm)," IEEE Electron Devices Letters, vol. 20, June 1999, pp. 292-294.
DOI
ScienceOn
|
17 |
A. Trellakis et al., "Iteration Scheme for the Solution of the Two Dimensional Schrodinger-Poisson Equations in Quantum Structures," J. Appl. Phys., vol. 81, June 1997, pp. 7880-7884.
DOI
ScienceOn
|