• JSTS:Journal of Semiconductor Technology and Science
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• 제8권3호
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• pp.264-275
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• 2008

Electron mobility has been investigated theoretically in undoped double-gate (DG) MOSFETs of different channel architectures: a relaxed-Si DG SOI, a strained-Si (sSi) DG SSOI (strained-Si-on-insulator, containing no SiGe layer), and a strained-Si DG SGOI (strained-Si-on-SiGe-on-insulator, containing a SiGe layer) at 300K. Electron mobility in the DG SSOI device exhibits high enhancement relative to the DG SOI. In the DG SGOI devices the mobility is strongly suppressed by the confinement of electrons in much narrower strained-Si layers, as well as by the alloy scattering within the SiGe layer. As a consequence, in the DG SGOI devices with thinnest strained-Si layers the electron mobility may drop below the level of the relaxed DG SOI and the mobility enhancement expected from the strained-Si devices may be lost.

• 대한전자공학회논문지SD
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• 제42권3호
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• pp.1-8
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• 2005

본 논문에서는 $0.1\;{\mu}m$ 이하의 게이트 길이를 갖는 MHEMT의 DC 및 RF 특성을 상용 시뮬레이터인 ISE-TCAD tool을 이용하여 결과를 고찰하였다. 이후 MHEMT의 게이트 길이와, 소스-드레인 간격 및 채널 두께를 변화시켜 가면서 소자의 수평, 수직 Scaling효과가 소자 특성에 미치는 영향을 비교하였으며, 게이트 길이 $(L_g)$가 $0.1\;{\mu}m$ 이하로 감소함에 따라 $g_{m,max}$가 같이 감소하는 현상에 대해서 논의해 보았다. 또한 이 현상을 가지고 소자의 횡적, 종적 파라미터의 scaling 효과에 대한 모델을 제시 했다.

• 센서학회지
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• 제30권6호
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• pp.441-445
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• 2021

The components affecting the extrinsic transconductance (g_{m_ext}) in In_0.7Ga_0.3As quantum-well (QW) high-electron-mobility transistors (HEMTs) on an InP substrate were investigated. First, comprehensive modeling, which only requires physical parameters, was used to explain both the intrinsic transconductance (g_{m_int}) and the g_{m_ext} of the devices. Two types of In_0.7Ga_0.3As QW HEMT were fabricated with gate lengths ranging from 10 ㎛ to sub-100 nm. These measured results were correlated with the modeling to describe the device behavior using analytical expressions. To study the effects of the components affecting g_{m_int}, the proposed approach was extended to projection by changing the values of physical parameters, such as series resistances (R_S and R_D), apparent mobility (𝜇_{n_app}), and saturation velocity (𝜈_sat).

• 전자공학회논문지A
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• 제33A권10호
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• pp.123-129
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• 1996

LDD structure is widely accepted in fabricating short channel MOSFETs due to reduced short channel effect originated form lower drain edge electric field. However, modeling of the LDD device is troublesome because the analysis methods of LDD region known are either too complicated or inaccurate. To solve the problem, this paper presents a nonlinear resistance model for the LDD region based on teh fact that the electron mobility changes with positive gate bias because accumulation layer of electrons is formed at the surface of the LDD region. To prove the usefulness of the model, single source/drain and LDD nMOSFETs were fabricated with 0.35$\mu$m CMOS technolgoy. For the fabricated devices we have measured I$_{ds}$-V$_{gs}$ characteristics and compare them to the modeling resutls. First of all, we calculated channel and LDD region mobility from I$_{ds}$-V$_{gs}$ characteristics of 1050$\AA$ sidewall, 5$\mu$m channel length LDD NMOSFET. Then we MOSFET and found good agreement with experiments. Next, we use calculated channel and LDD region mobility to model I$_{ds}$-V$_{gs}$ characteristics of LDD mMOSFET with 1400 and 1750$\AA$ sidewall and 5$\mu$m channel length and obtained good agreement with experiment. The single source/drain device characteristic modeling results indicates that the cahnnel mobility obtained form our model in LDD device is accurate. In the meantime, we found that the LDD region mobility is governed by phonon and surface roughness scattering from electric field dependence of the mobility. The proposed model is useful in device and circuit simulation because it can model LDD device successfully even though it is mathematically simple.

• 한국조명전기설비학회:학술대회논문집
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• 한국조명전기설비학회 2002년도 학술대회논문집
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• pp.267-270
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• 2002

The fluoescent lamp has been successfully modeled by employing the radial variation of particle density and considering driving circuit effects on the characteristics of discharge process. The electron energy distribution is assumed to have a Maxwellian. The electron mobility and the ambipolar diffusion coefficients are considered to vary with an electron energy rather than a simple uniform value. Energy states of mercury atom in the discharge process are regarded as six levels rather than simple 4 or 5 levels. These discharge processes have been accurately solved by numerically employing mixed the FDM and the 2nd Runge-Kutta method. This model was applied to analyzing real circuit. Simulation and experimental results were presented to verify the feasibility of the modeling. Simulation and experimental results were presented to verify the feasibility of the modeling.

• JSTS:Journal of Semiconductor Technology and Science
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• 제13권4호
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• pp.342-354
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• 2013

The aim of this work is to investigate and study the quantum effects in the modeling of nanoscale symmetric double-gate InAlAs/InGaAs/InP HEMT (High Electron Mobility Transistor). In order to do so, the carrier concentration in InGaAs channel at gate lengths ($L_g$) 100 nm and 50 nm, are modelled by a density gradient model or quantum moments model. The simulated results obtained from the quantum moments model are compared with the available experimental results to show the accuracy and also with a semi-classical model to show the need for quantum modeling. Quantum modeling shows major variation in electron concentration profiles and affects the device characteristics. The two triangular quantum wells predicted by the semi-classical model seem to vanish in the quantum model as bulk inversion takes place. The quantum effects thus become essential to incorporate in nanoscale heterostructure device modeling.

• 조명전기설비학회논문지
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• 제18권1호
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• pp.9-14
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• 2004

본 논문에서는 내부 입자의 반경방향 분포와 구동회로를 고려한 형광램프 모델링을 수행하였다. 모델링에서 전자에너지 분포는 Maxwellian으로 가정하였으며, 전자 이동도와 유극성 확산계수는 상수를 사용하였다. 방전 중 수은원자는 6가지 에너지레벨을 갖는다고 가정하였다. 모델을 사용하여 4개의 편미분 2개의 상미분 연립방정식을 FDM과 2계 Runge-Kutta 방법을 사용하여 수치적으로 해를 구하였다. 개발한 모델을 실제 형광램프와 LR안정기 회로에 적용하여 실험적으로 측정한 전압, 전류 파형과 수치해석적으로 구한 전압, 전류 파형을 비교하여, 본 형광램프 모델링의 타당성을 보였다.

• The Korean Journal of Ceramics
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• 제4권2호
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• pp.136-140
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• 1998

This work demonstrates a method for modeling of electrical conductivity in high-temperature proton-conducting oxides. Total conductivity was calculated assuming that it comprises partial conductivities contributed by protons, oxygen ions and electron holes. From the polt $\sigma_{tot}$ vs. $po_2\;{1/4}$ in wet atmosphere, thermodynamic and kinetic parameters were obtained representing transport properties such as concentration and mobility of the charge-carrying defects. The formulas for the calculation of partial conduction were derived based on the defect structure of HTPCs. Illustrative calculation were made for $SrCe_{0.95}Yb_{0.05}O_{2.975}$ system.

• 한국가시화정보학회지
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• 제2권1호
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• pp.12-17
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• 2004

The physical characteristics of soot near the soot inception point were investigated with various measurements. In-situ measurements of particle size and volume fraction were introduced based on time resolved laser-induced incandescence (TIRE-LII) and laser-induced ion mobility (LIIM). The one has more convenience and accuracy than conventional LII technique and the other works best for particle sizes of a few nanometers at high concentrations in a uniform concentration field. A complementary ex-situ measurement of particle size is nano differential mobility analyzer (Nano-DMA), which recently developed for measuring particle sizes between 2nm and 100nm and provides high-resolution size information for early soot. Particles will be also collected on transmission electron microscope (TEM) grids using rapid thermophoretic sampling and analyzed for morphology. These measurements will allow fresh and original insight into the characterizing soot inception process. The measured physical properties of incipient soot will clarify the controlling growth mechanism combined with chemical ones, and the dominant mechanism for soot modeling can be deduced from the information.

• ETRI Journal
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• 제26권4호
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• pp.307-314
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• 2004

The application of a discrete pseudomorphic high electron mobility transistor (p-HEMT) as a grounded switch allows for the development of low cost phase shifters and phase modulators operating in a Ku band. This fills the gap in the development of phase control devices comprising p-i-n diodes and microwave monolithic integrated circuits (MMICs). This paper describes a discrete p-HEMT characterization and modeling in switching mode as well as the development of a low-cost four-bit phase shifter and direct quadrature phase shift keying (QPSK) modulator. The developed devices operate in a Ku band with parameters comparable to commercially available MMIC counterparts. Both of them are CMOS compatible and have no power consumption. The parameters of the QPSK modulator are very close to the requirements of available standards for satellite earth stations.