• Vacuum Magazine
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• v.2 no.2
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• pp.24-28
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• 2015

The brightness of an electron source, along with the aberrations of an objective lens, determines the image resolution and beam current on samples, which are two important parameters for evaluating the performance of an electron microscope. Here we introduce thermal electron source, Schottky emitter and cold field electron emitter. Thermal electron source is the cheapest and stable electron source but it has the lowest brightness. Schottky emitter is 10000 times brighter than tungsten thermal electron source, but requires ultrahigh vacuum operating condition. Cold field electron emitter is 10 times brighter than Schottky emitters, but it is rather unstable and its operation requires most stringent vacuum condition, hindering its widespread use.

• Applied Microscopy
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• v.46 no.3
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• pp.155-159
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• 2016

This paper analyses the relationship between the distribution of a dielectric layer on the apex of a metal field electron emitter and the distribution of electron emission. Emitters were prepared by coating a tungsten emitter with a layer of epoxylite resin. A high-resolution scanning electron microscope was used to monitor the emitter profile and measure the coating thickness. Field electron microscope studies of the emission current distribution from these composite emitters (Tungsten-Clark Electromedical Instruments Epoxylite resin [Tungsten/CEI-resin emitter]) have been carried out. Two forms of image have been observed: bright single-spot images, thought to be associated with a smooth substrate and a uniform dielectric layer; and multi-spot images, though to be associated with irregularity in the substrate or the dielectric layer.

• Korean Journal of Optics and Photonics
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• v.13 no.4
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• pp.314-318
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• 2002

We examine the adjustment of the semiconvergent angle and current for the miniaturized micro column working at low voltage but producing maximized current. Our study shows that the minimum electron beam sizes are 10 ㎚ for the cold field emitter (CFE) and 20 ㎚ for the thermal field emitter (TFE) at a given condition.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.937-939
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• 2007

Carbon nanotubes (CNTs) have used as an electron field emitter of the field emission display (FED) due to their characteristics of high-electron emission, rapid response and low power consumption. However, to commercialize the FED with CNT emitter, some fundamental problems regarding life time and emission efficiency have to be solved. In this study, we investigated the $TiO_2$ coated CNT as a field emitter. $TiO_2$ nanoparticles can coated on CNT surface by chemical solution method. $TiO_2$ nanoparticles had uniform size with the average size of about 2.4 nm to 3.1 nm. Field emission performance of CNT coated with $TiO_2$ nanoparticles was evaluated and discussed.

• The Korean Journal of Ceramics
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• v.2 no.4
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• pp.193-196
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• 1996

A new type of electron emitter device of chemical-vapor-deposited diamond thin film is proposed. The device is a diode of metal-insulator-insulator-semiconductor (MIS) structure consisting of an intrinsic polycrystalline diamond film as the insulator, an aluminium electrode on one side, and hydrogenated diamond surface on the other side as the p-type semconductor with negative electron affinity (NEA). Electrons will be injected and/or excited to the conduction band of intrinsic diamond layer to be emitted from the hydrogenated diamond surface of NEA.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.383-383
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• 2011

Generally, field emitters can be categorized into two types according to the emitter shape, one is a planar field emitter and the other is a point emitter. The planar field emitter is used for displays, flat lamps and signage boards. On the other hands, the point field emitter is expected to play a significant role in x-ray sources and electron beam sources. Such applications of the point field emitters, especially, need large emission current and high emission stability with a small electron beam size. A few reports announced point emitters made by carbon nanotubes (CNTs). However, they still have suffered from poor reproducibility and low emission current. Here, we demonstrated high performance CNT point emitters by attaching CNTs onto graphite rod. Graphite rod exhibited good electrical conductivity and chemical stability. In this method, the shape of the point emitter could be easily controlled by changing the length and diameter of the graphite rod. The CNT point emitter showed emission current over 1 mA at an applied electric field of 1.4 V/${\mu}m$. We consider that the stable emission performance is attributed to the stable contact between CNTs and graphite rod.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.4
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• pp.330-335
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• 2003

This paper reports the optimum structure of the vacuum packaged Porous poly-silicon Nano-Structured (PNS) emitter. The PNS layer was obtained by electrochemical etching process into polycrystalline silicon layer in a process controlled to anodizing condition. Current-voltage studies were carried out to optimize process condition of electron emission properties as a function of anodizing condition and top electrode thickness. Also, we measured in advance the electron emission properties as a function of substrate temperature because the vacuum packaged process was performed under the condition of high temperature ambient (430$^{\circ}C$). Auger Electron Spectrometer (AES) studies shows that Au as a top-electrode was diffused to PNS layer during temperature experiments. Thus, we optimized the thickness of top-electrode in order to make the vacuum package PNS emitter. As a result, the vacuum Packaged PNS emitter was successfully emitted by optimizing process.

• Proceedings of the KSME Conference
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• 2007.05a
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• pp.1277-1281
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• 2007

A Nano-tip as a cold field emitter for inducing a field emission current has manufactured in many ways. In the paper, the electrochemical etching method is used. Thus, in order to optimize the final shape as the field emitter, the reliable fabrication system for electrochemical etching was constructed. In addition, the effective parameters such as applied voltage, submerged length, meniscus height, electrolyte concentration and environmental condition(vibration, humidity, cut-off time) have investigated in detail. By controlling the parameters, reliable tungsten tip for field emitter was fabricated. And the fabricated tungsten tip was evaluated optically. Finally, the very sharp apex of the tungsten tip was observed with scanning electron microscope.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1198-1201
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• 2006

Carbon nanotubes (CNTs) have used as an electron field emitter of the field emission display (FED) due to their characteristics of high-electron emission, rapid response and low power consumption. However, to commercialize the FED with CNT emitter, some fundamental problems regarding life time and emission efficiency have to be solved. In this study, we investigated the metal coated CNT as a field emitter on which metal nanoparticles were coated by chemical modification. Metal nanoparticles, such as Ru, Pd, were synthesized by solution reduction method. The size of the metal nanoparticle has the range of 2 - 5 nm. Surface was modified chemically with the use of ionic surfactant which changed the surface charge of nanoparticles.

• Journal of Electrical Engineering and Technology
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• v.3 no.1
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• pp.121-124
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• 2008

This paper presents the fabrication and field emission of carbon nanotube field emitters for a micro mass spectrometer. The carbon nanotube is an adequate material as a field emitter since it has good characteristics. We have successfully fabricated a diode field emitter and a triode field emitter. Each field emitter has been constructed using several micromachining processes and a thermal CVD process. In the case of the diode field emitter, to increase the electric field, the carbon nanotubes are selectively grown on the patterned nickel catalyst layer. The electron current of the diode field emitter is 73.2 ${\mu}A$ when the anode voltage is 1100V. That of the triode field emitter is 3.4 pA when the anode voltage is 1000V.