Electron Emitter of Negative Electron Affinity Diamond

  • Hiraki, Akio (Department of Electrical Engineering, Osaka University) ;
  • Ogawa, Kenji (Department of Electrical Engineering, Osaka University) ;
  • Eimori, Nobuhiro (Department of Electrical Engineering, Osaka University) ;
  • Hatta, Akimitsu (Department of Electrical Engineering, Osaka University)
  • 발행 : 1996.12.01

초록

A new type of electron emitter device of chemical-vapor-deposited diamond thin film is proposed. The device is a diode of metal-insulator-insulator-semiconductor (MIS) structure consisting of an intrinsic polycrystalline diamond film as the insulator, an aluminium electrode on one side, and hydrogenated diamond surface on the other side as the p-type semconductor with negative electron affinity (NEA). Electrons will be injected and/or excited to the conduction band of intrinsic diamond layer to be emitted from the hydrogenated diamond surface of NEA.

키워드

참고문헌

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